Semiconductor measurement device and method of measuring semiconductor

Patent metadata

Field	Value
Publication number	US-11060990-B2
Application number	US-201816113979-A
Country	US
Kind code	B2
Filing date	Aug 27, 2018
Priority date	Mar 22, 2018
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

A semiconductor measurement device includes an electrode provided in a semiconductor sample, and a probe contactable with the semiconductor sample. A driver moves a contact position of the probe with respect to the semiconductor sample. A power supply applies electric power between the probe and the electrode. A measurement operation portion measures a current flowing via the semiconductor sample between the probe and the electrode as a voltage applied between the probe and the electrode is changed, the measurement operation portion measuring the current flowing for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points. A display displays a relationship between the voltage and the current measured at each of the measurement points.

First claim

What is claimed is:

1. A semiconductor measurement device comprising:
an electrode provided in a semiconductor sample;
a probe contactable with the semiconductor sample;
a driver configured to move a contact position of the probe with respect to the semiconductor sample;
a power supply configured to apply electric power between the probe and the electrode;
a measurement operation portion configured to measure a current flowing via the semiconductor sample between the probe and the electrode as a voltage applied between the probe and the electrode is changed, the measurement operation portion configured to measure the current flowing for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points;
a display configured to display a relationship between the voltage and the current measured at each of the measurement points,
wherein the electrode is provided on a first side surface of the semiconductor sample, the semiconductor sample having a second side surface opposite to the first side surface, and the probe is contactable with the second side surface to form a direct contact region, where the probe is in electric contact with the semiconductor sample, and an indirect contact region, where the semiconductor sample and the probe are insulated from each other; and
a storage portion that stores a first threshold current and a second threshold current of the current having different polarities, wherein
the display is further configured to display the first threshold current and the second threshold current to be superimposed on the relationship between the voltage and the current.

2. The semiconductor measurement device according to claim 1 ,
wherein the measurement operation portion is configured to determine, for each measurement point, a conductivity type of the measurement point based on a relationship between the voltage and the current measured at the measurement point.

3. The semiconductor measurement device according to claim 2 , wherein the measurement operation portion is configured to determine the location of a p-n junction based on the determined conductivity types of the measurement points.

4. The semiconductor measurement device according to claim 3 , wherein in a case where plural p-n junction portions are detected, the measurement operation portion is configured to calculate a distance between the p-n junction portions, and
the display portion is configured to display the distance between the p-n junction portions.

5. The semiconductor measurement device according to claim 1 , wherein the power supply is one of a DC power supply or an AC power supply.

6. The semiconductor measurement device according to claim 5 , wherein the power supply is an AC power supply, and the measurement operation portion is configured to measure current flowing according to a voltage frequency of the AC power supply.

7. The semiconductor measurement device according to claim 1 , wherein
a contact portion of the semiconductor sample with respect to the probe is covered with an insulating film.

8. The semiconductor measurement device according to claim 1 , wherein
an impurity of a contact portion of the semiconductor sample with respect to the probe is inactivated.

9. The semiconductor measurement device according to claim 1 ,
wherein the storage portion stores the first threshold current being of a negative electrode and the second threshold current being of a positive electrode, wherein
the measurement operation portion is configured to: determine a conductivity type of the measurement point as a first conductivity type when the current is lower than the first threshold current, determine a conductivity type of the measurement point as a second conductivity type when the current is higher than the second threshold current, and determine that a p-n junction portion is present at the measurement point when the current is lower than the first threshold current and the second threshold current in terms of absolute values.

10. The semiconductor measurement device according to claim 9 , wherein
in a case where plural p-n junction portions are detected, the measurement operation portion is configured to calculate a distance between the p-n junction portions, and
the display is configured to display the distance between the p-n junction portions.

11. A semiconductor measurement device, comprising:
an electrode provided in a semiconductor sample;
a probe contactable with the semiconductor sample;
a driver configured to move a contact position of the probe with respect to the semiconductor sample;
a power supply configured to apply electric power between the probe and the electrode;
a measurement operation portion configured to measure a current flowing via the semiconductor sample between the probe and the electrode as a voltage applied between the probe and the electrode is changed, the measurement operation portion configured to measure the current flowing for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points;
a display configured to display a relationship between the voltage and the current measured at each of the measurement points,
wherein a tip portion of the probe is partially covered with an insulating film; and
a storage portion that stores a first threshold current and a second threshold current of the current having different polarities, wherein
the display is further configured to display the first threshold current and the second threshold current to be superimposed on the relationship between the voltage and the current.

12. The semiconductor measurement device according to claim 11 , wherein
a contact portion of the semiconductor sample with respect to the probe is covered with another insulating film.

13. A method of measuring a semiconductor using a semiconductor measurement device, the device including a probe that is contactable with a semiconductor sample, a driver configured to move a contact position of the probe with respect to the semiconductor sample, a power supply configured to apply electric power between the probe and the electrode provided in the semiconductor sample, a measurement operation portion configured to measure a current flowing via the semiconductor sample, and a display configured to display a measurement result of the current, the method comprising:
measuring a current flowing via the semiconductor sample between the probe and the electrode when a voltage applied between the probe and the electrode is changed, the current flowing measured for each of plural measurement points of a surface of the semiconductor sample while causing the probe to scan the measurement points, or while sequentially bringing the probe into contact with the measurement points;
displaying a relationship between the voltage and the current measured at each of the measurement points,
wherein
a tip portion of the probe is partially covered with an insulating film, and
a contact portion of the semiconductor sample with respect to the probe is covered with another insulating film; and

storing a first threshold current and a second threshold current of the current having different polarities;
wherein the displaying includes displaying the first threshold current and the second threshold current to be superimposed on the relationship between the voltage and the current.

14. The method of mea

Assignees

• Toshiba Memory Corp

Inventors

• Hirota Jun
• Nakai Tsukasa
• Kobayashi Masako
• Harada Kazunori

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• G01N27/041 Primary

  of a solid body · CPC title

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G01R31/2831

  Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates (G01R31/318511 takes precedence; testing during manufacture H10P74/00) · CPC title