Method of forming a metal silicide transparent conductive electrode

Patent metadata

Field	Value
Publication number	US-11056610-B2
Application number	US-201816053959-A
Country	US
Kind code	B2
Filing date	Aug 3, 2018
Priority date	Dec 7, 2011
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in an orderly arrangement on a substrate. The metal silicide nanowire network can be formed by printing a first set of multiple parallel silicon nanowires on the substrate and printing a second set of multiple parallel silicon nanowires over the first set of multiple parallel silicon nanowires such that said first set is perpendicular to said second set. A metal layer can be formed on the silicon nanowires. A silicidation anneal process is performed such that metal silicide nanowires are formed and fused together in an orderly arrangement, forming a grid network. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.

First claim

What is claimed is:

1. A method, comprising:
providing a substrate; and
forming, on said substrate, a metal silicide nanowire network for a transparent conducting film such that said metal silicide nanowire network comprises multiple metal silicide nanowires fused together in a grid on said substrate by
forming a metal layer on said substrate;
printing a first set of multiple parallel silicon nanowires on said metal layer;
subsequently printing a second set of multiple parallel silicon nanowires on said metal layer over said first set of multiple parallel silicon nanowires such that silicon nanowires in said second set of multiple parallel silicon nanowires are perpendicular to silicon nanowires in said first set of multiple parallel silicon nanowires;
performing a silicidation anneal to cause metal atoms from said metal layer to react with silicon material in said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires thus forming a plurality of metal silicide nanowires; and
fusing said plurality of metal silicide nanowires into said grid on said substrate.

2. A method, comprising:
forming, on a substrate, a metal silicide nanowire network for a transparent conducting film such that said metal silicide nanowire network comprises multiple metal silicide nanowires fused together in a grid on said substrate by
printing a first set of multiple parallel silicon nanowires on said substrate;
subsequently printing a second set of multiple parallel silicon nanowires on said substrate over said first set of multiple parallel silicon nanowires such that silicon nanowires in said second set of multiple parallel silicon nanowires are perpendicular to silicon nanowires in said first set of multiple parallel silicon nanowires;
forming a metal layer over said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires;
performing a silicidation anneal to cause metal atoms from said metal layer to react with silicon material in said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires thus forming a plurality of metal silicide nanowires; and
fusing said plurality of metal silicide nanowires into said grid on said substrate.

3. A method, comprising:
forming, on a substrate, a metal silicide nanowire network for a transparent conducting film such that said metal silicide nanowire network comprises multiple metal silicide nanowires fused together in a grid on said substrate by
printing a first set of multiple parallel metal nanowires on said substrate;
subsequently printing a second set of multiple parallel metal nanowires on said substrate over said first set of multiple parallel metal nanowires such that metal nanowires in said second set of multiple parallel metal nanowires are perpendicular to metal nanowires in said first set of multiple parallel metal nanowires;
forming a silicon layer over said first set of multiple parallel metal nanowires and said second set of multiple parallel metal nanowires;
performing a silicidation anneal to cause metal atoms from said metal nanowires in said first set of multiple parallel silicon nanowires and said second set of multiple parallel silicon nanowires react with silicon material in said silicon layer thus forming a plurality of metal silicide nanowires; and

fusing said plurality of metal silicide nanowires into said grid on said substrate.

4. The method according to claim 1 , further comprising:
coating said metal silicide nanowire network with a transparent polymer layer so as to fill gaps within said metal silicide nanowire network.

5. The method according to claim 4 , said transparent polymer layer comprising a polymer layer containing conductive particles or a conductive polymer layer.

6. The method according to claim 1 , further comprising:
transferring said metal silicide nanowire network from said substrate to another substrate.

7. The method according to claim 1 , wherein said multiple metal silicide nanowires comprise any of nickel (Ni) silicide nanowires, cobalt (Co) silicide nanowires, tungsten (W) silicide nanowires, chromium (Cr) silicide nanowires, platinum (Pt) silicide nanowires, titanium (Ti) silicide nanowires, molybdenum (Mo) silicide nanowires, and palladium (Pd) silicide nanowires.

8. The method according to claim 2 , further comprising:
coating said metal silicide nanowire network with a transparent polymer layer so as to fill gaps within said metal silicide nanowire network.

9. The method according to claim 8 , said transparent polymer layer comprising a polymer layer containing conductive particles or a conductive polymer layer.

10. The method according to claim 2 , further comprising:
transferring said metal silicide nanowire network from said substrate to another substrate.

11. The method according to claim 2 , wherein said multiple metal silicide nanowires comprise any of nickel (Ni) silicide nanowires, cobalt (Co) silicide nanowires, tungsten (W) silicide nanowires, chromium (Cr) silicide nanowires, platinum (Pt) silicide nanowires, titanium (Ti) silicide nanowires, molybdenum (Mo) silicide nanowires, and palladium (Pd) silicide nanowires.

12. The method according to claim 3 , further comprising:
coating said metal silicide nanowire network with a transparent polymer layer so as to fill gaps within said metal silicide nanowire network.

13. The method according to claim 12 , said transparent polymer layer comprising a polymer layer containing conductive particles or a conductive polymer layer.

14. The method according to claim 13 , further comprising:
transferring said metal silicide nanowire network from said substrate to another substrate.

15. The method according to claim 3 , wherein said multiple metal silicide nanowires comprise any of nickel (Ni) silicide nanowires, cobalt (Co) silicide nanowires, tungsten (W) silicide nanowires, chromium (Cr) silicide nanowires, platinum (Pt) silicide nanowires, titanium (Ti) silicide nanowires, molybdenum (Mo) silicide nanowires, and palladium (Pd) silicide nanowires.

Assignees

• IBM

Inventors

• Gambino Jeffrey P
• Liu Derrick
• Vanslette Daniel S

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F77/206

  for devices having potential barriers · CPC title