Structure with a metal silicide transparent conductive electrode and a method of forming the structure

Patent metadata

Field	Value
Publication number	US-9312426-B2
Application number	US-201113313101-A
Country	US
Kind code	B2
Filing date	Dec 7, 2011
Priority date	Dec 7, 2011
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

Disclosed are embodiments of a structure with a metal silicide transparent conductive electrode, which is commercially viable, robust and safe to use and, thus, optimal for incorporation into devices, such as flat panel displays, touch panels, solar cells, light emitting diodes (LEDs), organic optoelectronic devices, etc. Specifically, the structure can comprise a substrate (e.g., a glass or plastic substrate) and a transparent conducting film on that substrate. The transparent conducting film can comprise a metal silicide nanowire network. For example, in one embodiment, the metal silicide nanowire network can comprise multiple metal silicide nanowires fused together in a disorderly arrangement so that they form a mesh. In another embodiment, the metal silicide nanowire network can comprise multiple metal silicide nanowires patterned so that they form a grid. Also disclosed herein are various different method embodiments for forming such a structure.

First claim

What is claimed is:

1. A structure comprising:
a substrate;
a transparent conducting film on said substrate, said transparent conducting film comprising a metal silicide nanowire network comprising metal silicide nanowires,
said metal silicide nanowires comprising at least some intersecting metal silicide nanowires with interfaces between said intersecting metal silicide nanowires being physically fused together,
said metal silicide nanowires comprising multiple types of metal silicide nanowires made from different silicided metal or metal alloy; and

a transparent polymer layer coating said metal silicide nanowire network,
said transparent polymer layer comprising a conductive layer.

2. The structure of claim 1 , said transparent polymer layer filling any gaps within said metal silicide nanowire network.

3. The structure of claim 1 , said transparent polymer layer comprising a non-conductive polymer layer containing conductive particles.

4. The structure of claim 1 , said metal silicide nanowires comprising any of nickel (Ni) silicide nanowires, cobalt (Co) silicide nanowires, tungsten (W) silicide nanowires, chromium (Cr) silicide nanowires, platinum (Pt) silicide nanowires, titanium (Ti) silicide nanowires, molybdenum (Mo) silicide nanowires and palladium (Pd) silicide nanowires.

5. The structure of claim 1 , said metal silicide nanowires being in any one of the following:
a disorderly arrangement on said substrate; and
in a grid on said substrate.

6. A structure comprising:
a substrate; and
a transparent conducting film on said substrate, said transparent conducting film comprising:
a metal silicide nanowire network comprising metal silicide nanowires,
said metal silicide nanowires being arranged on said substrate and comprising at least some intersecting metal silicide nanowires with interfaces between said intersecting metal silicide nanowires being physically fused together,
said metal silicide nanowires comprising multiple types of metal silicide nanowires made from different silicided metal or metal alloy; and,

a transparent polymer layer coating said metal silicide nanowire network, said transparent polymer layer containing metal particles.

7. The structure of claim 6 , said transparent polymer layer filling any gaps within said metal silicide nanowire network.

8. The structure of claim 6 , said metal silicide nanowires comprising any of nickel (Ni) silicide nanowires, cobalt (Co) silicide nanowires, tungsten (W) silicide nanowires, chromium (Cr) silicide nanowires, platinum (Pt) silicide nanowires, titanium (Ti) silicide nanowires, molybdenum (Mo) silicide nanowires and palladium (Pd) silicide nanowires.

9. The structure of claim 6 , said metal silicide nanowires being in any one of the following:
a disorderly arrangement on said substrate; and
in a grid on said substrate.

10. A structure comprising:
a substrate;
a transparent conducting film on said substrate, said transparent conducting film comprising a metal silicide nanowire network comprising metal silicide nanowires made from different silicided metal or metal alloy; and
a transparent polymer layer coating said metal silicide nanowire network,
said transparent polymer layer comprising a conductive layer,
said metal silicide nanowires comprising at least some intersecting metal silicide nanowires with interfaces between said intersecting metal silicide nanowires being physically fused together, and
said metal silicide nanowires further comprising at least two different types of silicided metal or metal alloy.

11. The structure of claim 10 , said transparent polymer layer filling any gaps within said metal silicide nanowire network.

12. The structure of claim 10 , said transparent polymer layer comprising a non-conductive polymer layer containing conductive particles.

13. The structure of claim 12 , said conductive particles comprising metal particles.

14. The structure of claim 10 , said different types of metal silicide nanowires comprising any of nickel (Ni) silicide nanowires, cobalt (Co) silicide nanowires, tungsten (W) silicide nanowires, chromium (Cr) silicide nanowires, platinum (Pt) silicide nanowires, titanium (Ti) silicide nanowires, molybdenum (Mo) silicide nanowires and palladium (Pd) silicide nanowires.

15. The structure of claim 10 , said metal silicide nanowires being in any one of the following:
a disorderly arrangement on said substrate; and
in a grid on said substrate.

Assignees

• Gambino Jeffrey P
• Liu Derrick
• Vanslette Daniel S
• IBM

Inventors

• Gambino Jeffrey P
• Liu Derrick
• Vanslette Daniel S

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F77/211

  for photovoltaic cells · CPC title

• H10F77/206

  for devices having potential barriers · CPC title