Photonic devices

Patent metadata

Field	Value
Publication number	US-11054673-B2
Application number	US-202016896735-A
Country	US
Kind code	B2
Filing date	Jun 9, 2020
Priority date	May 11, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

Photonic devices having Al 1-x Sc x N and Al y Ga 1-y N materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x≤0.45 and 0≤y≤1.

First claim

What is claimed is:

1. A photonic device comprising: a Group III-Nitride quantum well electro-optic modulator, the modulator comprising:
a Group III-Nitride quantum well photonic waveguiding layer; and
a cladding layer comprising an Al 1-x Sc x N, where 0<x≤0.45, the cladding layer disposed on the Group III-Nitride quantum well photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride while also providing a crystalline lattice matching layer to the Group III-Nitride quantum well photonic waveguiding layer.

2. A Group III-Nitride quantum well electro-optic modulator, comprising:
a Group III-Nitride quantum well photonic waveguiding layer; and
a cladding layer comprising an Al 1-x Sc x N disposed on the Group III-Nitride quantum well photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride while also providing a crystalline lattice matching layer to the Group III-Nitride quantum well photonic waveguiding layer and where 0<x≤0.45.

3. A Group III-Nitride quantum well electro-optic modulator comprising,
a Group III-Nitride quantum well photonic waveguiding layer with in-plane light propagation; and
a cladding layer, such cladding layer comprising Al 1-x Sc x N disposed on the Group III-Nitride quantum well photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride while also providing a crystalline lattice matching layer to the Group III-Nitride quantum well photonic waveguiding layer and where 0<x≤0.45.

4. The Group III-Nitride quantum well electro-optic modulator recited in claim 3 wherein the Group III-Nitride quantum well photonic waveguiding layer comprises a stack of Al y Ga 1-y N and In z Ga 1-z N layers where 0<z≤1 and 0≤y≤1.

5. A Group III-Nitride quantum well electro-optic modulator having: a photonic waveguiding layer; and cladding layer disposed on the photonic waveguiding layer, the cladding layer comprising Al 1-x Sc x N, where: 0<x≤0.45 and the photonic waveguiding layer comprises a stack of Al y Ga 1-y N and In z Ga 1-z N layers where 0<z≤1 and 0≤y≤1.

6. The photonic device recited in claim 1 wherein the Group III-Nitride quantum well photonic waveguiding layer comprises a stack of Al y Ga 1-y N and In z Ga 1-z N layers where 0<z≤1 and 0≤y≤1.

7. The photonic device recited in claim 1 comprising a second cladding layer comprising Al 1-x Sc x N wherein the Group III-Nitride quantum well photonic waveguiding layer is disposed between the cladding layer and the second cladding layer.

8. The Group III-Nitride quantum well electro-optic modulator recited in claim 2 wherein the Group III-Nitride quantum well photonic waveguiding layer comprises a stack of Al y Ga 1-y N and In z Ga 1-z N layers where 0<z≤1 and 0≤y≤1.

9. The Group III-Nitride quantum well electro-optic modulator recited in claim 2 comprising a second cladding layer comprising Al 1-x Sc x N wherein the Group III-Nitride quantum well photonic waveguiding layer is disposed between the cladding layer and the second cladding layer.

10. The Group III-Nitride quantum well electro-optic modulator recited in claim 2 wherein the cladding layer comprises a stack of GAN/InScN layers.

11. The Group III-Nitride quantum well electro-optic modulator recited in claim 10 wherein the cladding layer and the second classing layer each comprises a stack of GAN/InScN layers.

Assignees

• Raytheon Bbn Technologies Corp
• Raytheon Co

Inventors

• Soltani Mohammad
• Chumbes Eduardo M

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D30/4732

  using Group III-V semiconductor material · CPC title

• H10D30/475

  having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs · CPC title

• H10D30/015

  of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT · CPC title

• H10D62/852

  being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP · CPC title