Polishing pad, manufacturing method therefor, and method for manufacturing a semiconductor device
US-9181386-B2 · Nov 10, 2015 · US
US11053339B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11053339-B2 |
| Application number | US-201816608050-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2018 |
| Priority date | May 12, 2017 |
| Publication date | Jul 6, 2021 |
| Grant date | Jul 6, 2021 |
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Disclosed herein are polyurethanes useful for polishing layers, where the polyurethane is a polyurethane having a Schiff base. Also disclosed herein are polishing layers containing the polyurethanes, polishing methods that use the polishing layers, and a modification method including a step of converting the Schiff base into at least one functional group selected from an aldehyde group, a carboxylic acid group, a hydroxyl group, and an amino group.
Opening claim text (preview).
The invention claimed is: 1. A modification method of a polishing layer including a polyurethane, the method comprising: preparing a polishing layer including a polyurethane having a Schiff base; and converting the Schiff base into at least one functional group selected from the group consisting of an aldehyde group, a carboxylic acid group, a hydroxyl group, and an amino group.
involving a dielectric removal step · CPC title
of conductive or resistive materials · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
compounds of group C08G18/3203 · CPC title
Manufacture of polymers by continuous processes (C08G18/0838 takes precedence) · CPC title
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