Polishing pad, manufacturing method therefor, and method for manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9181386-B2
Application number	US-201113634218-A
Country	US
Kind code	B2
Filing date	Mar 17, 2011
Priority date	Mar 26, 2010
Publication date	Nov 10, 2015
Grant date	Nov 10, 2015

Abstract

A polishing pad having a polishing layer comprising a thermoset polyurethane foam, wherein the thermoset polyurethane foam contains, as raw material components, an isocyanate component, and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise one or more polyol compounds (each) having two or more functional groups, and a monool compound having one functional group.

First claim

The invention claimed is:

1. A polishing pad having a polishing layer comprising a thermoset polyurethane foam,
wherein the thermoset polyurethane foam contains, as raw material components, an isocyanate component, and active-hydrogen-containing compounds, and
the active-hydrogen-containing compounds comprise one or more polyol compounds, each of which has two or more functional groups, and a monool compound having one functional group, and
the monool compound is a compound represented by the following general formula (1):
R1-(OCH2CHR2) n -OH  (1)

wherein R1 is a methyl or ethyl group, R2 is a hydrogen atom, or a methyl group, and n is an integer of 1 or 2, and
the thermoset polyurethane foam has substantially spherical bubbles having an average bubble diameter of 20 to 300 μm.

2. The polishing pad according to claim 1 , wherein the monool compound is contained in an amount of 1 to 20 parts by weight for 100 parts by weight of the polyol compound(s).

3. The polishing pad according to claim 1 , wherein one or more polyol compounds, each of which has 3 or 4 functional groups and a hydroxyl group value of 100 to 1,900 mg KOH/g, are comprised in an amount of 20 to 75 parts by weight for 100 parts by weight of the polyol compounds.

4. The polishing pad according to claim 1 , wherein the isocyanate component is an aromatic isocyanate.

5. The polishing pad according to claim 1 , wherein the isocyanate component is a carbodiimide-modified diphenylmethane diisocyanate.

6. A method for manufacturing a polishing pad, comprising:
the step of using a mechanical foaming method to prepare a foam-dispersed urethane composition containing, as raw material components, active-hydrogen-containing compounds comprising a polyol compound having two or more functional groups and a monool compound having one functional group, and an isocyanate component;
wherein the monool compound is a compound represented by the following general formula (1):
R1-(OCH2CHR2) n -OH  (1)

R1 being a methyl or ethyl group, R2 is a hydrogen atom, or a methyl group, and n is an integer of 1 or 2,
the step of painting the foam-dispersed urethane composition onto a planar member;
the step of setting the foam-dispersed urethane composition to form a polishing layer comprising a thermoset polyurethane foam having substantially spherical bubbles having an average bubble diameter of 20 to 300 μm;
and the step of adjusting the polishing layer into a uniform thickness.

7. A method for manufacturing a semiconductor device, comprising the step of using the polishing pad recited in claim 1 to polish a surface of a semiconductor wafer.

8. The polishing pad according to claim 1 , wherein a molecular weight of the monool compound is smaller than or equal to the molecular weight of diethylene glycol monoethyl ether.

Assignees

• Doura Masato
• Ishizaka Nobuyoshi
• Toyo Tire & Rubber Co

Inventors

• Doura Masato
• Ishizaka Nobuyoshi

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C08G18/4277

  Caprolactone and/or substituted caprolactone · CPC title

• C08G18/2835

  having less than 5 ether groups · CPC title

• C08G18/4854

  Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group · CPC title

• C08G2101/0025

  Chemistry & Metallurgy · mapped topic