Embedded electronics in metal additive manufacturing builds enabled by low-melting temperature transition zone using material gradients

Patent metadata

Field	Value
Publication number	US-11052462-B2
Application number	US-201815961491-A
Country	US
Kind code	B2
Filing date	Apr 24, 2018
Priority date	Apr 24, 2018
Publication date	Jul 6, 2021
Grant date	Jul 6, 2021

Abstract

An additive manufacturing product is provided. The additive manufacturing product includes an embedded electronic, a transition zone, and a base material. The transition zone encases the embedded electronic. The transition zone includes transition material. The base material encases the transition zone. The transition material includes an intermediate melting point that is lower than a melting point of the base material.

First claim

What is claimed is:

1. An additive manufacturing product comprising:
an embedded electronic extending from a bottom end to a top end to define a side surface;
a transition zone encasing the embedded electronic, the transition zone comprising a transition material; and
a base material encasing the transition zone;
wherein the transition material comprises an intermediate melting point that is lower than a melting point of the base material,
wherein the transition material directly contacts the side surface and covers the bottom end while completely encasing the side surface such that the base material does not directly contact the embedded electronic.

2. The product of claim 1 , wherein the intermediate melting point enables the transition zone material to be compatible with the embedded electronics and enables the transition zone material to bond with the base material.

3. The product of claim 1 , wherein the base material comprises a metal material.

4. The product of claim 1 , wherein the transition material is a discrete deposit between the embedded electronic and the base material, the transition material completely surrounding the embedded electronic and that contemporaneously forms the transition zone.

5. The product of claim 1 , wherein the transition material is a material gradient that starts with transition zone material near the embedded electronics and incrementally includes more of the base material as the transition zone moves away from the embedded electronics and towards the base material.

6. The product of claim 1 , wherein the transition zone comprises a plurality of columns constructed in one or more layers.

7. The product of claim 1 , wherein the transition zone comprises a plurality of stacked wreaths constructed in one or more layers.

8. The product of claim 1 , wherein the transition zone comprises a plurality of projecting columns constructed in one or more layers.

9. The product of claim 1 , wherein the transition material extends along the side surface from the bottom end to the top end, and wherein an upper portion of the top end is exposed by the transition material and the base material.

Assignees

• Hamilton Sundstrand Corp
• Hamilton Sunstrand Corp

Inventors

• Giulietti Diana
• Madinger Alexander

Classifications

• B22F10/25

  Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS] · CPC title

• B22F7/08 Primary

  with one or more parts not made from powder {(B22F7/062 takes precedence)} · CPC title

• B22F10/30

  Process control · CPC title

• B33Y70/00

  Materials specially adapted for additive manufacturing · CPC title

• B22F2301/052

  Aluminium · CPC title