Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11043419-B2
Application number	US-201916294044-A
Country	US
Kind code	B2
Filing date	Mar 6, 2019
Priority date	Sep 5, 2018
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

A semiconductor device according to an embodiment comprises a semiconductor substrate having a through hole from a first face to a second face on an opposite side to the first face. A metal part is provided inside the through hole. A stacked film is provided between the metal part and an inner side surface of the through hole, and comprises a plurality of different material films of two or more types having a relative permittivity equal to or lower than 6.5.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a through hole from a first face to a second face on an opposite side to the first face;
a metal part provided inside the through hole;
a stacked film provided between the metal part and an inner side surface of the through hole, comprising a plurality of different material films of two or more types, and having a relative permittivity equal to or lower than 6.5; and
a semiconductor element provided on the second face of the semiconductor substrate, wherein
at least a first material film of the stacked film is provided to cover from the inner side surface of the through hole to the first face and continuously cover the first face of the semiconductor substrate,
when viewed from a direction perpendicular to the first face, a third material film of the stacked film does not cover the first face, and
a distance along the direction perpendicular to the first face between and end of the third material film on the side of the second face and the first face is shorter than a distance along the direction perpendicular to the first face between the second face adn the first face.

2. The semiconductor device of claim 1 , wherein the stacked film comprises a three-layer film of the first material film, a second material film, and the third material film.

3. The semiconductor device of claim 2 , wherein the stacked film comprises a SiOCH film or a metallic compound film as the second material film.

4. The semiconductor device of claim 3 , wherein the metallic compound film comprises at least one of a tungsten film, a titanium film, a tantalum film, an aluminum film, a tungsten oxide film, a titanium oxide film, a tantalum oxide film, and an aluminum oxide film.

5. The semiconductor device of claim 2 , wherein one of the first and third material films is a silicon dioxide film and the other thereof comprises at least one of a silicon dioxide film, SiN, SiON, SiCN, porous SiOCH, an organic-material insulating film, AlO, TaO, and HfO.

6. The semiconductor device of claim 2 , wherein
one of the first and third material films is a silicon dioxide film and the other thereof comprises at least one of a silicon dioxide film, SiN, SiON, SiCN, porous SiOCH, an organic-material insulating film, AlO, TaO, and HfO, and
the second material film comprises a SiOCH film or a metallic compound film.

7. The semiconductor device of claim 1 , wherein
the stacked film comprises a three-layer film of a first material film, a second material film and the third material film, the first material film being the nearest to the inner side surface among the three stacked films, the second material film being the second nearest to the inner side surface among the three stacked films, the third material film being farther from the inner side surface than the first and second material films, wherein
the first and second material films are provided on the first face, and
the third material film is not provided on the first face.

8. The semiconductor device of claim 1 , wherein
the thickness of the stacked film between the metal part and the inner side surface of the through hole is substantially 1 μm.

9. The semiconductor device of claim 1 , wherein
the stacked film includes a second material film between the first material film and the third material film,
the second material film continuously covers the inner side surface of the through hole to the first face,
an end of the second material film on the side of the second face is nearer the first face than the second face.

10. A semiconductor device comprising:
a substrate having a through hole from a first face to a second face on an opposite side to the first face;
a semiconductor element provided on the second face of the substrate;
a metal part provided inside the through hole and electrically connected to the semiconductor element; and
a stacked film provided between the metal part and an inner side surface of the through hole and having a relative permittivity equal to or lower than 6.5, wherein
the stacked film includes a first material film, a second material film and a third material film stacked in this order from the inner side surface to the metal part,
the first and second material film are provided on the first face,
when viewed from a direction perpendicular to the first face, the third material film does not cover the first face, and
an end of the third material film on the side of the second face is recessed from the second face to the first face.

11. The semiconductor device of claim 10 , wherein
one of the first and third material films is a silicon dioxide film and the other thereof comprises at least one of a silicon dioxide film, SiN, SiON, SiCN, porous SiOCH, an organic-material insulating film, AlO, TaO, and HfO.

12. The semiconductor device of claim 10 , wherein
the second material film comprises at least one of a tungsten film, a titanium film, a tantalum film, an aluminum film, a tungsten oxide film, a titanium oxide film, a tantalum oxide film, and an aluminum oxide film.

13. The semiconductor device of claim 10 , wherein
an end of the second material film on the side of the second face is recessed from the second face to the first face.

14. The semiconductor device of claim 10 , wherein
the thickness of the stacked film is substantially 1 μm.

15. The semiconductor device of claim 10 , wherein the first and third material films are made by a same material.

Assignees

• Toshiba Memory Corp

Inventors

• Kume Ippei

Classifications

• H10W20/0265

  characterised by the sidewall insulation · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10W70/635

  Through-vias · CPC title