Method for producing semiconductor device and semiconductor device

Patent metadata

Field	Value
Publication number	US-10153227-B2
Application number	US-201715694994-A
Country	US
Kind code	B2
Filing date	Sep 4, 2017
Priority date	Mar 29, 2017
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a through via extending through the semiconductor substrate from the first surface to the second surface, a metal layer adjacent an inside surface of the through via, and an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface opposite the first surface;
a through via extending through the semiconductor substrate from the first surface to the second surface;
a metal layer adjacent an inside surface of the through via; and
an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less.

2. The semiconductor device according to claim 1 , wherein the insulating film comprises silicon oxide.

3. The semiconductor device according to claim 1 , wherein the insulating film comprises a silicon oxide film and a silicon nitride film.

4. The semiconductor device according to claim 1 , wherein the insulating film includes moisture therein.

5. The semiconductor device according to claim 4 , wherein the insulating film has a thickness that is increased by 15% due to moisture therein.

6. The semiconductor device according to claim 1 , wherein the metal layer comprises a barrier metal layer and a seed metal layer including copper, the barrier metal layer covering a surface of the insulating film.

7. The semiconductor device according to claim 1 , wherein a bond ratio of an amount of Si—OH bonds to an amount of Si—O bonds in the insulating film is equal to or less than 15%.

8. A method of producing a semiconductor device, comprising:
forming a hole through a semiconductor substrate;
depositing an insulating film on a first surface of the semiconductor substrate and on an inside surface of the hole at a temperature of 150° C. or less, the insulating film having a thickness of at most 1 μm;
forming a metal layer on the inside surface of the hole, the metal layer covering the insulating film;
forming a through via on the metal layer; and
annealing the insulating film for a predetermined time prior to forming the metal layer, wherein
a bond ratio of an amount of Si—OH bonds to an amount of Si—O bonds in the insulating film is equal to or less than 15%.

9. The method according to claim 8 , wherein the insulating film comprises silicon oxide.

10. The method according to claim 8 , wherein the insulating film comprises a silicon oxide film and a silicon nitride film.

11. The method according to claim 8 , wherein the insulating film includes moisture therein.

12. The method according to claim 11 , wherein the insulating film has a thickness that is increased by 15% due to moisture therein.

13. The method according to claim 8 , wherein the metal layer comprises a barrier metal layer and a seed metal layer including copper, the barrier metal layer covering a surface of the insulating film.

14. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface opposite the first surface;
a first through via on the first surface;
a wiring structure on the first surface, the wiring structure being in contact with the first through via;
a second through via extending through the semiconductor substrate from the first surface to the second surface thereof, the second through via contacting the wiring structure;
a metal layer within the second through via;
an insulating film having OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of at most 1 μm; and
a conductive bump on the second through via for connecting to an external semiconductor device.

15. The semiconductor device according to claim 14 , wherein the insulating film includes silicon oxide.

16. The semiconductor device according to claim 14 wherein the insulating film comprises a silicon oxide film and a silicon nitride film.

17. The semiconductor device according to claim 14 , wherein the insulating film includes moisture therein.

18. The semiconductor device according to claim 14 , wherein the metal layer comprises a barrier metal layer and a seed metal layer including copper, the barrier metal layer covering a surface of the insulating film.

19. The semiconductor device according to claim 14 , wherein a bond ratio of an amount of Si—OH bonds to an amount of Si—O bonds in the insulating film is equal to or less than 15%.

Assignees

• Toshiba Memory Corp

Inventors

• Kume Ippei
• Matsuda Taketo
• Okuda Shinya
• Murano Masahiko

Classifications

• H10W20/0265

  characterised by the sidewall insulation · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title