Systems and methods for inhibiting detectivity, metal particle contamination, and film growth on wafers

Patent metadata

Field	Value
Publication number	US-11043378-B2
Application number	US-201916681634-A
Country	US
Kind code	B2
Filing date	Nov 12, 2019
Priority date	Nov 13, 2018
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer and exposing an area of interest with actinic radiation. The actinic radiation causes a de-protection reaction within the self-assembled monolayer within the central region. The method also includes removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

First claim

The invention claimed is:

1. A method of processing a substrate, the method comprising:
receiving a substrate, the substrate having a front side surface, a backside surface, and a side edge surface;
coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer (SAM);
exposing an area of interest with actinic radiation, the actinic radiation causing a de-protection reaction within the self-assembled monolayer within the area of interest; and
removing the self-assembled monolayer from the area of interest while the self-assembled monolayer remains on remaining surfaces of the substrate.

2. The method of claim 1 , wherein the self-assembled monolayer is a fluorinated material.

3. The method of claim 1 , wherein the self-assembled monolayer is a hyper-branched carbon-containing material.

4. The method of claim 1 , wherein the self-assembled monolayer is coated by vapor deposition.

5. The method of claim 1 , further comprising:
depositing a metal-containing film on the substrate by spin-on deposition, the metal-containing film failing to fully adhering to surfaces coated with the self-assembled monolayer.

6. The method of claim 1 , wherein the self-assembled monolayer includes a chromophore reactive to a predetermined light wavelength.

7. The method of claim 1 , wherein the substrate can further include bevel edge surfaces.

8. The method of claim 1 , wherein the area of interest is an interior region of the front side surface, the interior region extending from a center point of the front side surface to an edge region of the front side surface, the edge region of the front side surface being an annular region extending from a perimeter of the front side surface to a predetermined distance towards a center point of the front side surface.

9. The method of claim 1 , wherein the area of interest is a central region of the front side surface, the central region having a surface area that is less than a surface area of the front side surface.

10. The method of claim 1 , wherein the self-assembled monolayer has an initial state that is hydrophobic.

11. The method of claim 1 , wherein exposing the area of interest with actinic radiation includes delivering a photo dose to the area of interest.

12. The method of claim 11 , wherein a wavelength of the actinic radiation is 266 nm or 365 nm.

13. The method of claim 11 , wherein the photo dose desorbs the SAM in the area of interest.

14. The method of claim 1 , further comprising:
removing a non-stick portion of the SAM; and
using a remaining portion of the SAM as an adhesion promotor.

15. A method of processing a substrate, the method comprising:
receiving a substrate, the substrate having a front side surface, a backside surface, and a side edge surface;
coating a target region of the front side surface with a sacrificial film, the sacrificial film having a surface that prevents adhesion of specific materials to the target region;
coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer, the self-assembled monolayer failing to adhere to the sacrificial film, the self-assembled monolayer being hydrophobic; and
removing the sacrificial film from the target region of the front side surface.

16. The method of claim 15 , wherein the target region is a central region having a surface area that is less than a surface area of the front side surface.

17. A method of processing a substrate, the method comprising:
receiving a substrate, the substrate having a front side surface, a backside surface, and a side edge surface;
coating a target region of the front side surface with a sacrificial film;
coating the front side surface, the backside surface and the side edge surface with a self-assembled monolayer, the self-assembled monolayer being hydrophobic; and
removing the sacrificial film from the target region of the front side surface, wherein removing the sacrificial film also removes the self-assembled monolayer that was attached to the sacrificial film resulting in the target region being free from the self-assembled monolayer.

18. The method of claim 17 , wherein the target region is a central region of the front side surface having a surface area that is less than a surface area of the front side surface.

19. The method of claim 17 , wherein the self-assembled monolayer is coated by vapor deposition.

20. The method of claim 17 , wherein the self-assembled monolayer is a fluorinated material.

Assignees

• Tokyo Electron Ltd

Inventors

• Lemley Corey
• Farrell Richard
• Kang Hoyoung

Classifications

• H10P14/6528

  In-situ cleaning after layer formation, e.g. removing process residues · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/687

  the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene · CPC title

• H10P14/6538 Primary

  by exposure to UV light · CPC title

• H10P14/61

  using masks · CPC title