Surface treated abrasive particles for tungsten buff applications

Patent metadata

Field	Value
Publication number	US-11043151-B2
Application number	US-201715723886-A
Country	US
Kind code	B2
Filing date	Oct 3, 2017
Priority date	Oct 3, 2017
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) an abrasive, wherein the abrasive is positively charged at the pH of the polishing composition prior to surface coating, selected from the group consisting of ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units, or wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and phosphonic acid monomeric units,
(b) an oxidizing agent, and
(c) water,

wherein the polishing composition has a pH of about 2 to about 5.

2. The polishing composition of claim 1 , wherein the copolymer consists of 2-acrylamido-2-methylpropane sulfonic acid monomeric units and acrylic acid monomeric units.

3. The polishing composition of claim 1 , wherein the polis composition further comprises an organic phosphonic acid selected from 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri(methylenephosphonic acid), ethylenediaminetetra(methylenephosphonic acid), diethylenetriaminepenta(methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methyl phosphonosuccinic acid, and combinations thereof.

4. The polishing composition of claim 1 , wherein the oxidizing agent comprises ferric ion.

5. The polishing composition of claim 4 , wherein the oxidizing agent further comprises hydrogen peroxide and about 5 ppm to about 500 ppm ferric nitrate.

6. The polishing composition of claim 1 , wherein the polishing composition further comprises an amino acid.

7. The polishing composition of claim 6 , wherein the amino acid is glycine, lysine, arginine, or alanine.

8. The polishing composition of claim 1 , wherein the polishing composition further comprises an amino acid.

9. The polishing composition of claim 8 , wherein the amino acid is glycine, lysine, arginine, or alanine.

10. A chemical-mechanical polishing composition comprising:
(a) an alumina abrasive, wherein the abrasive is positively charged at the pH of the polishing composition prior to surface coating, wherein the alumina is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units, or wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and phosphonic acid monomeric units,
(b) an oxidizing agent, wherein the oxidizing agent comprises hydrogen peroxide and about 5 ppm to about 500 ppm ferric nitrate,
(c) an organic phosphonic acid, wherein the organic phosphonic acid is selected from 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri(methylenephosphonic acid), ethylenediaminetetra(methylenephosphonic acid), diethylenetriaminepenta(methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methyl phosphonosuccinic acid, and combinations thereof, and
(d) water,

wherein the polishing composition has a pH of about 2 to about 5.

11. The polishing composition of claim 10 , wherein the copolymer consists of 2-acrylamido-2-methylpropane sulfonic acid monomeric units and acrylic acid monomeric units.

12. A method of chemically mechanically polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises at least one layer of tungsten or cobalt and at least one layer of silicon oxide, and wherein at least a portion of the tungsten or cobalt and at least a portion of the silicon oxide is abraded to polish the substrate,
(ii) providing a polishing pad,
(iii) providing a chemical-mechanical polishing composition comprising:
(a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is positively charged at the pH of the polishing composition prior to surface coating, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units, or wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and phosphonic acid monomeric units,

(b) an oxidizing agent, wherein the oxidizing agent comprises hydrogen peroxide and about 5 ppm to about 500 ppm ferric nitrate,
and
(c) water,

wherein the polishing composition has a pH of about 2 to about 5,
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
(v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

13. The method of claim 12 , wherein the copolymer consists of 2-acrylamido-2-methylpropane sulfonic acid monomeric units and acrylic acid monomeric units.

14. The method of claim 12 , wherein the 2-acrylamido-2-methylpropane sulfonic acid monomeric units and acrylic acid monomeric units are in a molar ratio range of 10:1 to 1:10.

15. The method of claim 12 , wherein the copolymer does not comprise acrylic ester monomeric units or monomeric units comprising aryl groups.

16. The method of claim 12 , wherein the polishing composition further comprises an organic phosphonic acid selected from 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri(methylenephosphonic acid), ethylenediaminetetra(methylenephosphonic acid), diethylenetriaminepenta(methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphoric acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid, α-methyl phosphonosuccinic acid, and combinations thereof.

17. The method of claim 12 , wherein the polish composition further comprises an amino acid.

18. The method of claim 17 wherein the amino acid is glycine, lysine, arginine, or alanine.

19. The method of claim 12 , wherein the substrate further comprises TiN, and wherein at least a portion of the TiN is abraded to polish the substrate.

Assignees

• Cabot Microelectronics Corp
• Cmc Mat Inc

Inventors

• Cui Ji
• Huang Helin
• Dockery Kevin P
• Singh Pankaj K
• Huang Hung-Tsung
• Chien Chih-Hsien

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title