Semiconductor device and manufacturing method thereof
US-2024404870-A1 · Dec 5, 2024 · US
US9343330B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9343330-B2 |
| Application number | US-63457606-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 6, 2006 |
| Priority date | Dec 6, 2006 |
| Publication date | May 17, 2016 |
| Grant date | May 17, 2016 |
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The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an oxidizing agent, calcium ion, an organic carboxylic acid, and water, wherein the polishing composition has a pH of about 1.5 to about 7. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
Opening claim text (preview).
The invention claimed is: 1. A chemical-mechanical polishing composition comprising: (a) an abrasive, wherein the abrasive is polymer-treated alumina comprising alumina treated with a negatively-charged polymer, wherein the negatively-charged polymer is poly(2-acrylamido-2-methylpropane sulfonic acid), (b) an oxidizing agent selected from the group consisting of peroxides, persulfates, ferric salts, and combinations thereof, (c) 50 to 200 ppm of calcium ion, (d) about 1 wt. % to about 4 wt. % of an organic carboxylic acid, wherein the organic carboxylic acid is selected from the group consisting of citric acid, malonic acid, succinic acid and tartaric acid, and (e) water, wherein the polishing composition has a pH of 2 to 6. 2. The polishing composition of claim 1 , wherein the polishing composition comprises 0.001 wt. % to 2 wt. % of abrasive. 3. The polishing composition of claim 1 , wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide, ammonium persulfate, ferric nitrate, and combinations thereof. 4. The polishing composition of claim 3 , wherein the polishing composition comprises 0.1 wt. % to 5 wt. % of oxidizing agent.
of conductive or resistive materials · CPC title
Etching of wafers, substrates or parts of devices · CPC title
Abrasive particles per se (preparation of diamond C01B32/25) · CPC title
Aqueous liquid suspensions · CPC title
Composite particles, e.g. coated particles · CPC title
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