Treatment liquid and pattern forming method

Patent metadata

Field	Value
Publication number	US-11042094-B2
Application number	US-201815937873-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Sep 30, 2015
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.

First claim

What is claimed is:

1. A treatment liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and
containing an organic solvent,
wherein the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more,
wherein the first organic solvent includes a hydrocarbon-based solvent, and the hydrocarbon-based solvent includes undecane, and
wherein a mass ratio of the first organic solvent to the second organic solvent is 60:40 to 90:10.

2. The treatment liquid according to claim 1 ,
wherein the treatment liquid is a rinsing liquid.

3. The treatment liquid according to claim 2 ,
wherein the second organic solvent includes a ketone-based solvent.

4. The treatment liquid according to claim 3 ,
wherein the ketone-based solvent includes an acyclic ketone.

5. The treatment liquid according to claim 1 ,
wherein the second organic solvent includes a ketone-based solvent.

6. The treatment liquid according to claim 5 ,
wherein the ketone-based solvent includes an acyclic ketone.

7. A treatment liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and
containing an organic solvent,
wherein the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more,
wherein a mass ratio of the first organic solvent to the second organic solvent is 60:40 to 90:10,
wherein the second organic solvent includes a ketone-based solvent, and the ketone-based solvent includes an acyclic ketone,
wherein the first organic solvent includes a hydrocarbon-based solvent, and
wherein the hydrocarbon-based solvent includes undecane.

8. A treatment liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and
containing an organic solvent,
wherein the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more,
wherein the first organic solvent includes a hydrocarbon-based solvent, and the hydrocarbon-based solvent includes undecane, and
wherein a mass ratio of the first organic solvent to the second organic solvent is 80:20 to 90:10.

9. A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition;
an exposing step of exposing the resist film; and
a treating step of treating the exposed resist film with the treatment liquid according to claim 1 .

10. A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition;
an exposing step of exposing the resist film; and
a treating step of treating the exposed resist film with the treatment liquid according to claim 1 ,
wherein the treating step includes:
a developing step of carrying out development with a developer; and
a rinsing step of carrying out washing with a rinsing liquid, and
the rinsing liquid is the treatment liquid.

Assignees

• Fujifilm Corp

Inventors

• Hirano Shuji
• Tsubaki Hideaki
• Tsuchihashi Toru
• Nihashi Wataru
• Yamamoto Kei

Classifications

• G03F7/0043 Primary

  Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence) · CPC title

• G03F7/0758

  with silicon- containing groups in the side chains · CPC title

• C11D7/5027

  Hydrocarbons · CPC title

• G03F7/095

  having more than one photosensitive layer (G03F7/075 takes precedence) · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title