Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11040416-B2
Application number	US-201615757896-A
Country	US
Kind code	B2
Filing date	Sep 7, 2016
Priority date	Sep 7, 2015
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and flake-shaped micro copper particles having a maximum particle size of 1 μm to 20 μm, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 μm to 20 μm and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

First claim

The invention claimed is:

1. Copper paste for joining, comprising:
metal particles; and
a dispersion medium,
wherein the metal particles include:
sub-micro copper particles having a volume-average particle size of 0.3 μm to 0.8 μm, and
flake-shaped micro copper particles having a maximum particle size of 1 μm to 20 μm and an aspect ratio of 4 or greater,

an amount in the metal particles of micro copper particles having a maximum particle size of 1 μm to 20 μm and an aspect ratio of less than 2 is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles,
a maximum particle size of any particles in the copper paste is 20 μm,
the amount of the sub-micro copper particles contained is 20% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the flake-shaped micro copper particles, and
the amount of the flake-shaped micro copper particles contained is 1% by mass to 90% by mass on the basis of a total mass of the metal particles.

2. The copper paste for joining according to claim 1 ,
wherein the copper paste for joining is used without pressurization.

3. The copper paste for joining according to claim 1 ,
wherein the metal particles include at least one kind of metal particles selected from the group consisting of nickel, silver, gold, palladium, and platinum.

4. The copper paste for joining according to claim 2 ,
wherein the metal particles include at least one kind of metal particles selected from the group consisting of nickel, silver, gold, palladium, and platinum.

5. The copper paste for joining according to claim 1 , wherein the metal particles include sub-micro copper particles having a volume-average particle size of 0.3 μm to 0.45 μm.

6. The copper paste for joining according to claim 1 , wherein the maximum particle size of any particles in the copper paste is 10 μm.

7. A method for manufacturing a joined body, comprising:
a process of preparing a laminated body in which a first member, and the copper paste for joining according to claim 1 and a second member that are disposed on a side whereon a weight of the first member acts, are laminated in this order; and sintering the copper paste for joining in a state of receiving only the weight of the first member, or the weight of the first member and a pressure of 0.01 MPa or lower.

8. A method for manufacturing a semiconductor device, comprising:
a process of preparing a laminated body in which a first member, and the copper paste for joining according to claim 1 and a second member that are disposed on a side whereon a weight of the first member acts, are laminated in this order; and sintering the copper paste for joining in a state of receiving only the weight of the first member, or the weight of the first member and a pressure of 0.01 MPa or lower,
wherein at least one of the first member and the second member is a semiconductor element.

Assignees

• Hitachi Chemical Co Ltd
• Showa Denko Materials Co Ltd

Inventors

• Ishikawa Dai
• Kawana Yuki
• Sugama Chie
• Nakako Hideo
• Ejiri Yoshinori
• Kurafuchi Kazuhiko

Classifications

• H10W72/646

  the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector · CPC title

• H10W72/07653

  changes in shapes · CPC title

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title