Metal-insulator-metal capacitors including nanofibers

Patent metadata

Field	Value
Publication number	US-11038011-B2
Application number	US-201916667037-A
Country	US
Kind code	B2
Filing date	Oct 29, 2019
Priority date	Oct 29, 2019
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

Methods of fabricating a structure for a metal-insulator-metal (MIM) capacitor. Conductive nanofibers are formed on a surface of a conductor layer. Each conductive nanofiber is terminated by an enlarged tip portion opposite the surface of the conductor layer. The enlarged tip portion is removed from each conductive nanofiber. The MIM capacitor may include the conductive nanofibers as portions of an electrode.

First claim

What is claimed is:

1. A method comprising:
forming a plurality of conductive nanofibers on a surface of a first conductor layer, wherein the plurality of conductive nanofibers are laterally spaced by gaps, and each of the plurality of conductive nanofibers is terminated by an enlarged tip portion opposite the surface of the first conductor layer;
removing the enlarged tip portion from each of the plurality of conductive nanofibers;
depositing a conformal dielectric layer on the first conductor layer and the plurality of conductive nanofibers after the enlarged tip portion is removed from each of the plurality of conductive nanofibers;
depositing a second conductor layer over the conformal dielectric layer on the first conductor layer and the plurality of conductive nanofibers that fills the gaps between the plurality of conductive nanofibers to define a solid composite layer; and
patterning the second conductor layer with lithography and etching processes.

2. The method of claim 1 wherein forming the plurality of conductive nanofibers on the surface of the first conductor layer comprises:
forming a patterned catalyst layer on the first conductor layer,
wherein the plurality of conductive nanofibers are grown from the patterned catalyst layer, and the enlarged tip portion terminating each of the plurality of conductive nanofibers includes a section of the patterned catalyst layer removed during growth.

3. The method of claim 1 wherein the second conductor layer includes a first portion conformally deposited by atomic layer deposition and a second portion deposited by physical vapor deposition.

4. The method of claim 1 wherein removing the enlarged tip portion from each of the plurality of conductive nanofibers comprises:
depositing a dielectric layer over the plurality of conductive nanofibers and the first conductor layer; and
planarizing the dielectric layer and the plurality of conductive nanofibers,
wherein the enlarged tip portion is removed from each of the plurality of conductive nanofibers when the dielectric layer and the plurality of conductive nanofibers are planarized.

5. The method of claim 4 wherein each of the plurality of conductive nanofibers has a terminating end exposed after removing the enlarged tip portion, and the plurality of conductive nanofibers have approximately equal heights between the surface of the first conductor layer and the respective terminating end.

6. The method of claim 1 wherein the enlarged tip portion is removed from each of the plurality of conductive nanofibers with a wet chemical etching process.

7. The method of claim 6 wherein each of the plurality of conductive nanofibers has a terminating end exposed after removing the enlarged tip portion, and the plurality of conductive nanofibers have unequal heights between the surface of the first conductor layer and the respective terminating end.

8. A method of forming a metal-insulator capacitor, the method comprising:
forming a plurality of conductive nanofibers on a surface of a first conductor layer, wherein the plurality of conductive nanofibers are laterally spaced by gaps, and each of the plurality of conductive nanofibers is terminated by an enlarged tip portion opposite the surface of the first conductor layer;
removing the enlarged tip portion from each of the plurality of conductive nanofibers;
depositing a conformal dielectric layer on the first conductor layer and the plurality of conductive nanofibers after the enlarged tip portion is removed from each of the plurality of conductive nanofibers;
depositing a second conductor layer over the conformal dielectric layer by a deposition process combination that fills the gaps between the plurality of conductive nanofibers to define a solid composite layer; and
patterning the second conductor layer to define a first electrode of the metal-insulator capacitor.

9. The method of claim 8 wherein each of the plurality of conductive nanofibers has a terminating end that is exposed after removing the enlarged tip portion, and the plurality of conductive nanofibers have approximately equal heights between the surface of the first conductor layer and the terminating end of each of the plurality of conductive nanofibers.

10. The method of claim 8 wherein the second conductor layer includes a first portion conformally deposited by atomic layer deposition and a second portion deposited by physical vapor deposition.

11. The method of claim 8 further comprising:
patterning the first conductor layer to define a second electrode of the metal-insulator capacitor.

12. The method of claim 8 wherein forming the plurality of conductive nanofibers on the surface of the first conductor layer comprises:
forming a patterned catalyst layer on the first conductor layer,
wherein the plurality of conductive nanofibers are grown from the patterned catalyst layer, and the enlarged tip portion terminating each of the plurality of conductive nanofibers includes a section of the patterned catalyst layer removed during growth.

13. The method of claim 12 wherein the section of the patterned catalyst layer is removed from each of the plurality of conductive nanofibers and the patterned catalyst layer is removed from the first conductor layer with a wet chemical etching process.

14. The method of claim 8 wherein the enlarged tip portion is removed from each of the plurality of conductive nanofibers with a wet chemical etching process.

15. The method of claim 14 wherein each of the plurality of conductive nanofibers has a terminating end exposed after removing the enlarged tip portion.

16. The method of claim 15 wherein the plurality of conductive nanofibers have unequal heights between the surface of the first conductor layer and the respective terminating end.

17. The method of claim 8 wherein removing the enlarged tip portion from each of the plurality of conductive nanofibers comprises:
depositing a dielectric layer over the plurality of conductive nanofibers and the first conductor layer; and
planarizing the dielectric layer and the plurality of conductive nanofibers,
wherein the enlarged tip portion is removed from each of the plurality of conductive nanofibers when the dielectric layer and the plurality of conductive nanofibers are planarized.

18. The method of claim 17 wherein the dielectric layer and the plurality of conductive nanofibers are planarized by chemical-mechanical polishing.

19. The method of claim 17 wherein each of the plurality of conductive nanofibers has a terminating end exposed after removing the enlarged tip portion.

20. The method of claim 19 wherein the plurality of conductive nanofibers have approximately equal heights between the surface of the first conductor layer and the respective terminating end.

Assignees

• Globalfoundries Us Inc

Inventors

• Cheng Lili
• Fox Iii Robert J
• England Luke

Classifications

• H10D1/712 Primary

  being rough surfaces, e.g. using hemispherical grains · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/4266

  Electricity · mapped topic

• H01L28/84 Primary

  Electricity · mapped topic

• H01L51/502

  Electricity · mapped topic