Polishing composition and method utilizing abrasive particles treated with an aminosilane

Patent metadata

Field	Value
Publication number	US-11034862-B2
Application number	US-201916664235-A
Country	US
Kind code	B2
Filing date	Oct 25, 2019
Priority date	Sep 21, 2007
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

First claim

The invention claimed is:

1. A method of chemically-mechanically polishing a substrate, which method comprises:
(i) contacting a substrate with a chemical-mechanical polishing composition comprising:
(a) a liquid carrier, and
(b) an abrasive suspended in the liquid carrier, wherein the abrasive comprises colloidal silica particles having a surface which has been treated with a compound selected from the group consisting of an aminosilane compound, a phosphonomumsilane compound, and a sulfonium silane compound, wherein the colloidal silica particles have a percent surface coverage from about 5% to about 32%, and
(c) about 0.0001 wt.% to about 3 wt.% of a corrosion inhibitor, and
(d) an oxidizing agent,
(ii) moving the polishing composition relative to the substrate, and
(iii) abrading at least a portion of the substrate to polish the substrate, wherein the substrate comprises at least one layer of silicon oxide or at least one layer of silicon nitride, and wherein the substrate further comprises at least one metal layer, and wherein at least a portion of the substrate is removed to polish the substrate.

2. The method of claim 1 , wherein the metal layer is selected from the group consisting of tungsten, tantalum, titanium, ruthenium, copper and aluminum.

3. The method of claim 1 , wherein the polishing composition has a pH of about 1 to about 7.

4. The method of claim 1 , wherein the surface of the abrasive has been treated with an aminosilane compound that contains an ammopropyl group.

5. The method of claim 1 , wherein the oxidizing agent is selected from the group consisting of bromates, bromites, chlorates, chlorites, hydrogen peroxide, hypochlorites, iodates, hydroxylamine salts, monoperoxy sulfate, monoperoxy sulfite, monoperoxyphosphate, monoperoxyhypophosphate, monoperoxypyrophosphate, organohalo-oxy compounds, periodates, permanganate, peroxyacetic acid, and mixtures thereof.

6. The method of claim 1 , wherein the polishing composition has a pH of about 1.5 to about 5.

7. The method of claim 1 , wherein the polishing composition has a pH of about 2 to about 4.

Assignees

• Cabot Microelectronics Corp
• Cmc Mat Inc

Inventors

• Grumbine Steven
• Li Shoutian
• Ward William
• Singh Pankaj
• Dysard Jeffrey

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title