Method of integration of a magnetoresistive structure

Patent metadata

Field	Value
Publication number	US-11031546-B2
Application number	US-201816194523-A
Country	US
Kind code	B2
Filing date	Nov 19, 2018
Priority date	Dec 17, 2010
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.

First claim

What is claimed is:

1. A method of manufacturing an interconnect to a magnetoresistive structure, the method comprising:
forming at least one via on a first surface of a first dielectric layer, the at least one via including sidewalls;
depositing a first electrically conductive material in the at least one via to form a first layer of the first electrically conductive material on at least a portion of the sidewalls of the at least one via;
after forming the first layer, depositing a second electrically conductive material to at least partially fill the at least one via and form a layer of the second electrically conductive material above a first surface of the first dielectric layer;
polishing an exposed surface of the layer of the second electrically conductive material, wherein at least a portion of the layer of the second electrically conductive material above the first surface remains after the polishing, and a top surface of the first dielectric layer is covered by the second electrically conductive material; and
forming a magnetoresistive structure above the layer of the second electrically conductive material after the polishing;
wherein (a) the step of depositing the second electrically conductive material fills the at least one via and covers an opening of the at least one via on the first surface, and the exposed surface of the layer of the second electrically conductive material includes a depression at a location corresponding to the location of the opening, and (b) the step of polishing the exposed surface of the layer of the second electrically conductive material removes the depression.

2. The method of claim 1 , wherein the first electrically conductive material is the same as the second electrically conductive material.

3. The method of claim 1 , wherein the first electrically conductive material and the second electrically conductive material are different materials.

4. The method of claim 1 , wherein the first electrically conductive material includes at least one of tantalum, tantalum nitride, tungsten, ruthenium, aluminum, aluminum alloys, copper, copper alloys, titanium, titanium nitride, or titanium tungsten.

5. The method of claim 1 , wherein the second electrically conductive material includes at least one of aluminum, copper, tantalum, tantalum nitride, titanium, or their combinations.

6. The method of claim 1 , wherein the step of depositing the first electrically conductive material also forms the first layer of the first electrically conductive material on at least a portion of the first surface of the first dielectric layer.

7. The method of claim 1 , wherein the step of polishing the exposed surface of the layer of the second electrically conductive material incudes polishing the exposed surface using chemical mechanical polishing.

8. The method of claim 1 , wherein the first and second electrically conductive materials form a first electrical contact to the magnetoresistive structure, and the method further incudes:
depositing one or more dielectric materials above the magnetoresistive structure; and
forming a second electrical contact through the one or more dielectric materials deposited above the magnetoresistive structure.

9. The method of claim 1 , wherein the first and second electrically conductive materials form a first electrical contact to the magnetoresistive structure, and the method further incudes:
depositing a second dielectric material to form a second dielectric layer over the magnetoresistive structure;
depositing a third dielectric material to form a third dielectric layer over the second dielectric layer, wherein the second dielectric material is more resistant to chemical mechanical polishing than the third dielectric material;
polishing an exposed surface of the third dielectric layer using chemical mechanical polishing to remove at least a portion of the third dielectric layer from above the magnetoresistive structure;
after the polishing, performing one of more etching steps to form a trench through the second and third dielectric layers above the magnetoresistive structure and expose a portion of the magnetoresistive structure; and
depositing an electrically conductive metal in the trench to form a second electrical contact to the magnetoresistive structure.

10. A method of manufacturing an interconnect to a magnetoresistive structure, the method comprising:
forming a first layer of a first electrically conductive material on sidewalls of at least one via on a first surface of a first dielectric material;
after forming the first layer, forming a second layer of a second electrically conductive material (a) over the first layer on the sidewalls of the at least one via, and (b) above the first surface of the first dielectric layer;
polishing an exposed surface of the second layer using chemical mechanical polishing, wherein at least a portion of the second layer above the first surface remains after the polishing; and
forming a magnetoresistive structure above the second layer after the polishing; wherein:
forming the second layer includes depositing the second electrically conductive material to fill the at least one via and cover an opening of the at least one via on the first surface such that the exposed surface of the second layer includes a depression at a location corresponding to the location of the opening; and
the step of polishing the exposed surface removes the depression.

11. The method of claim 10 , wherein the first electrically conductive material is the same as the second electrically conductive material.

12. The method of claim 10 , wherein the first electrically conductive material and the second electrically conductive material are different materials.

13. The method of claim 10 , wherein the first electrically conductive material includes at least one of tantalum, tantalum nitride, tungsten, ruthenium, aluminum, aluminum alloys, copper, copper alloys, titanium, titanium nitride, or titanium tungsten.

14. The method of claim 10 , wherein the second electrically conductive material includes at least one of aluminum, copper, tantalum, tantalum nitride, titanium, or their combinations.

15. The method of claim 10 , wherein the step of forming the first layer on the sidewalls of the at least one via also forms a layer of the first electrically conductive material on at least a portion of the first surface of the first dielectric layer.

16. The method of claim 10 , wherein the first and second electrically conductive materials in the at least one via form a first electrical contact to the magnetoresistive structure, and the method further incudes:
depositing one or more dielectric materials above the magnetoresistive structure; and
forming a second electrical contact through the one or more dielectric materials deposited above the magnetoresistive structure.

17. The method of claim 10 , wherein the first and second electrically conductive materials form a first electrical contact to the magnetoresistive structure, and the method further incudes:
depositing a second dielectric material to form a second dielectric layer over the magnetoresistive structure;
depositing a third dielectric material to form a third dielectric layer over the second dielectric layer, wherein the second dielectric material is more resistant to chemical mechanical polishing than the third dielectric material;
polishing an exposed surface of the third dielectric layer using chemical mechanical polishing to remove at least a portion of the third dielectric layer from above the magnetoresistive structure;
after the

Assignees

• Everspin Technologies Inc

Inventors

• Nagel Kerry Joseph
• Smith Kenneth H
• Hossain Moazzem
• Aggarwal Sanjeev

Classifications

• H10P50/264

  by chemical means · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/092

  by smoothing the dielectric parts · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10W20/056 Primary

  by filling conductive material into holes, grooves or trenches · CPC title