Nonvolatile memory device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-11031410-B2
Application number	US-201916425365-A
Country	US
Kind code	B2
Filing date	May 29, 2019
Priority date	Oct 22, 2018
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A nonvolatile memory device in which reliability is improved and a method for fabricating the same are provided. The nonvolatile memory device includes a mold structure which includes a first insulating pattern, a first gate electrode and a second insulating pattern sequentially stacked on a substrate, a semiconductor pattern which penetrates the mold structure, is connected to the substrate, and extends in a first direction, a first charge storage film extending in the first direction between the first insulating pattern and the second insulating pattern and between the first gate electrode and the semiconductor pattern, and a blocking insulation film between the first gate electrode and the first charge storage film, wherein a first length at which the first charge storage film extends in the first direction is longer than a second length at which the blocking insulation film extends in the first direction.

First claim

What is claimed is:

1. A nonvolatile memory device comprising:
a mold structure which includes a first insulating pattern, a first gate electrode and a second insulating pattern sequentially stacked on a substrate;
a semiconductor pattern which penetrates the mold structure, is connected to the substrate, and extends in a first direction;
a first charge storage film extending in the first direction between the first insulating pattern and the second insulating pattern and between the first gate electrode and the semiconductor pattern; and
a blocking insulation film between the first gate electrode and the first charge storage film,
wherein a first length at which the first charge storage film extends in the first direction is longer than a second length at which the blocking insulation film extends in the first direction, and
wherein the first charge storage film includes a protrusion extending, in the first direction, into one of the first insulating pattern and the second insulating pattern.

2. The nonvolatile memory device of claim 1 , wherein the blocking insulation film extends along a bottom surface, sidewalls, and an upper surface of the first gate electrode.

3. The nonvolatile memory device of claim 1 , wherein the mold structure further includes a second gate electrode on the second insulating pattern, and
the nonvolatile memory device further comprises a second charge storage film apart from the first charge storage film between the second gate electrode and the semiconductor pattern.

4. The nonvolatile memory device of claim 1 , wherein the first insulating pattern and the second insulating pattern include an air gap inside.

5. The nonvolatile memory device of claim 1 , wherein the first length increases approaching the semiconductor pattern.

6. The nonvolatile memory device of claim 1 , wherein sidewalls of the first charge storage film adjacent to the blocking insulation film include a concave surface.

7. The nonvolatile memory device of claim 1 , wherein the mold structure further includes a ground selection line between the substrate and the first insulating pattern.

8. The nonvolatile memory device of claim 1 , wherein the mold structure further includes a string selection line on the second insulating pattern, and
the nonvolatile memory device string further comprises an upper charge storage film extending along an upper surface and sidewalls of the string selection line.

9. The nonvolatile memory device of claim 1 , further comprising:
an impurity region in the substrate; and
a separation structure penetrating the mold structure and connected to the impurity region,
wherein the mold structure further includes a string selection line on the second insulating pattern, and
sidewalls of the separation structure adjacent to the string selection line include a step.

10. A nonvolatile memory device comprising:
a mold structure which includes a first gate electrode, an insulating pattern and a second gate electrode sequentially stacked on a substrate;
a semiconductor pattern penetrating the mold structure and connected to the substrate;
a first charge storage film between the first gate electrode and the semiconductor pattern;
a second charge storage film apart from the first charge storage film between the second gate electrode and the semiconductor pattern;
a first blocking insulation film between the first gate electrode and the insulating pattern; and
a second blocking insulation film between the second gate electrode and the insulating pattern,
wherein a first distance at which the first charge storage film and the second charge storage film are apart from each other is shorter than a second distance at which the first blocking insulation film and the second blocking insulation film are apart from each other, and
wherein the first charge storage film includes a first protrusion extending into the insulating pattern in a first direction, and the second charge storage film includes a second protrusion extending into the insulating pattern in the first direction.

11. The nonvolatile memory device of claim 10 , wherein the first blocking insulation film extends along a bottom surface, sidewalls, and an upper surface of the first gate electrode, and
the second blocking insulation film extends along a bottom surface, sidewalls and an upper surface of the second gate electrode.

12. The nonvolatile memory device of claim 10 , wherein the semiconductor pattern extends in a first direction and penetrates the mold structure, and
a first length at which the first charge storage film extends in the first direction is longer than a second length at which the first blocking insulation film extends in the first direction.

13. The nonvolatile memory device of claim 12 , further comprising:
a tunnel insulating film penetrating the mold structure between the semiconductor pattern and the insulating pattern,
wherein sidewalls of the tunnel insulating film between the first charge storage film and the second charge storage film include a concave surface.

14. The nonvolatile memory device of claim 10 , wherein the insulating pattern includes an air gap inside.

15. The nonvolatile memory device of claim 10 , wherein the first distance decreases approaching the semiconductor pattern.

16. A nonvolatile memory device comprising:
a mold structure which includes a first insulating pattern, a first gate electrode and a second insulating pattern sequentially stacked on a substrate;
a semiconductor pattern which penetrates the mold structure, is connected to the substrate, and extends in a first direction; and
a first charge storage film extending in the first direction between the first insulating pattern and the second insulating pattern and between the first gate electrode and the semiconductor pattern,
wherein a first length at which the first charge storage film extends in the first direction increases approaching the semiconductor pattern,
wherein the first charge storage film includes a first protrusion extending into the first insulating pattern in the first direction, and a second protrusion extending to the second insulating pattern in the first direction,
wherein the first protrusion is disposed above an upper surface of the first gate electrode, and
the second protrusion is disposed below a bottom surface of the first gate electrode.

17. The nonvolatile memory device of claim 16 , wherein the mold structure further includes a second gate electrode on the second insulating pattern, and
the nonvolatile memory device further includes a second charge storage film apart from the first charge storage film, between the second gate electrode and the semiconductor pattern.

18. The nonvolatile memory device of claim 16 , wherein a distal end of the first charge storage film adjacent to the first insulating pattern includes a concave surface.

19. The nonvolatile memory device of claim 16 , further comprising:
a blocking insulation film between the first gate electrode and the first charge storage film,
wherein the blocking insulation film extends along a bottom surface, sidewalls and the upper surface of the first gate electrode.

20. The nonvolatile memory device of claim 16 , further comprising:
a blocking insulation film between the first gate electrode and the first charge storage film,
wherein a second length at which the blocking insulation film extends in the first direction is shorter than the first length.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Se Jun
• Yu Min-Tai
• Lee Jae Duk

Classifications

• H10D64/035

  comprising conductor-insulator-conductor-insulator-semiconductor structures · CPC title

• H10D64/037 Primary

  comprising charge-trapping insulators · CPC title

• G11C5/06

  Arrangements for interconnecting storage elements electrically, e.g. by wiring · CPC title

• H01L27/11556 Primary

  Electricity · mapped topic

• H01L27/11582

  Electricity · mapped topic