Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes

Patent metadata

Field	Value
Publication number	US-11031273-B2
Application number	US-201816213816-A
Country	US
Kind code	B2
Filing date	Dec 7, 2018
Priority date	Dec 7, 2018
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.

First claim

The invention claimed is:

1. An electrostatic chuck, comprising:
an electrode;
a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils;
gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body, the gas distribution channels including a first channel that extends from the central opening to the first opening, a plurality of radial channels that extend from the first channel to an annular channel disposed in the peripheral region, and a plurality of second channels that extend from the annular channel to the plurality of second openings; and
a heater disposed in the dielectric body.

2. The electrostatic chuck of claim 1 , wherein each of the plurality of radial channels extend between adjacent second channels.

3. The electrostatic chuck of claim 2 , wherein the plurality of second openings includes eight second openings arranged equidistant from the first opening and at regular intervals along the peripheral region.

4. The electrostatic chuck of claim 3 , wherein the plurality of radial channels includes four radial channels.

5. The electrostatic chuck of claim 1 , wherein a length of the plurality of second channels from the annular channel to the plurality of second openings is greater than 120.0 mils.

6. The electrostatic chuck of claim 1 , wherein the plurality of protrusions define a substrate receiving surface and recesses between the protrusions, wherein the recesses are configured to flow gas across the dielectric body while a substrate is disposed on the plurality of protrusions.

7. The electrostatic chuck of claim 6 , wherein the plurality of protrusions include a first set of protrusions disposed in the central region of the electrostatic chuck have a greater surface area than a second set of protrusions disposed in the peripheral region of the electrostatic chuck.

8. The electrostatic chuck of claim 1 , wherein the dielectric body includes an opening to accommodate a thermocouple.

9. The electrostatic chuck of claim 1 , wherein the heater comprises an inner heater having a resistive heating element disposed in the central region and an outer heater having a resistive heating element disposed in the peripheral region.

10. A substrate support, comprising:
a hollow shaft; and
a pedestal, the pedestal comprising:
a housing coupled to the hollow shaft;
a dielectric body covering an electrode, the dielectric body coupled to the housing and including an upper surface having a first opening in a central region of the dielectric body and a plurality of second openings in a peripheral region of the dielectric body and a lower surface having a central opening,
a plenum including a first channel that extends from the central opening to the first opening, a plurality of radial channels that extend from the first channel to an annular channel disposed in the peripheral region, and a plurality of second channels that extend from the annular channel to the plurality of second openings, wherein a length of the plurality of second channels from the annular channel to the plurality of second openings is greater than 120.0 mils; and
one or more heating elements disposed in the dielectric body.

11. The substrate support of claim 10 , wherein the pedestal includes one or more through holes to accommodate lift pins.

12. The substrate support of claim 10 , wherein the pedestal further comprises a cooling plate coupled to a base of the pedestal.

13. The substrate support of claim 10 , wherein the one or more heating elements comprise a first resistive heating element disposed in the central region and a second resistive heating element disposed in the peripheral region.

14. The substrate support of claim 10 , wherein the plurality of second openings includes eight second openings arranged at regular intervals along the peripheral region of the dielectric body.

15. A physical vapor deposition (PVD) process chamber, comprising:
a chamber body;
a substrate support disposed within the chamber body and having a pedestal coupled to a hollow shaft, the pedestal having a dielectric body covering an electrode, the dielectric body including an upper surface and a lower surface, the upper surface configured to receive a substrate and the upper surface having a first opening in a central region of the dielectric body and a plurality of second openings in a peripheral region of the dielectric body and the lower surface having a central opening, wherein a diameter of each of the plurality of second openings is greater than 25.0 mils;
a heater disposed in the dielectric body;
a gas conduit extending from a gas supply disposed outside of the chamber body to the central opening; and
gas distribution channels extending from the central opening to the plurality of second openings, the gas distribution channels in fluid communication with the gas conduit, wherein at least one of:
the gas distribution channels include a first channel that extends from the central opening to the first opening, a plurality of radial channels that extend from the first channel to an annular channel disposed in the peripheral region, and a plurality of second channels that extend from the annular channel to the plurality of second openings;
the heater comprises a first resistive heating element disposed in the central region and a second resistive heating element disposed in the peripheral region; or
the plurality of second openings includes eight second openings arranged at regular intervals along the peripheral region of the dielectric body.

16. The PVD process chamber of claim 15 , further comprising a lift mechanism that is capable of moving one or more lift pin through corresponding through holes in the dielectric body.

17. The PVD process chamber of claim 15 , wherein the gas supply includes Argon (Ar) gas.

Assignees

• Applied Materials Inc

Inventors

• Chia Bonnie T
• Marshall Ross
• Matsushita Tomoharu
• Tsai Cheng-Hsiung

Classifications

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/7614

  characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title