Treatment liquid and method for washing substrate
US-2019136161-A1 · May 9, 2019 · US
US11028343B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11028343-B2 |
| Application number | US-201716474918-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 22, 2017 |
| Priority date | Dec 28, 2016 |
| Publication date | Jun 8, 2021 |
| Grant date | Jun 8, 2021 |
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In one aspect, provided is a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition having excellent cleaning properties against ceria and being capable of reducing a temporal change in the solubility of ceria.In one aspect, the present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D,the component A being sulfuric acid;the component B being ascorbic acid;the component C being at least one of thiourea and dithiothreitol andthe component D being water.
Opening claim text (preview).
The invention claimed is: 1. A cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D, the component A being sulfuric acid; the component B being ascorbic acid; the component C being at least one of thiourea and dithiothreitol; and the component D being water. 2. The cleaning agent composition according to claim 1 , wherein a mass ratio BIC of a content of the component B to a content of the component C is 0.05 to 10 inclusive. 3. The cleaning agent composition according to claim 1 or 2 , wherein a total content of the component B and the component C at the time of cleaning is 0.001 mass % to 1 mass % inclusive. 4. The cleaning agent composition according to claim 1 , wherein a content of the component A at the time of cleaning is 0.005 mass % to 0.5 mass % inclusive. 5. The cleaning agent composition according to claim 1 , further containing a dispersing agent (a component E). 6. A method for cleaning a substrate for a semiconductor device, the method comprising a cleaning step of cleaning a substrate to be cleaned, using the cleaning agent composition according to claim 1 , wherein the substrate to be cleaned is a substrate that has processed polishing using a polishing liquid composition containing ceria. 7. A method for manufacturing a substrate for a semiconductor device, the method comprising a cleaning step of cleaning a substrate to be cleaned, using the cleaning agent composition according to claim 1 , wherein the substrate to be cleaned is a substrate that has processed polishing using a polishing liquid composition containing ceria. 8. A method for manufacturing a substrate for a semiconductor device, the method comprising: step 1 of polishing a substrate using a polishing liquid composition containing ceria; and step 2 of cleaning a substrate that has been polished in the step 1, using the cleaning agent composition according to claim 1 .
Cleaning of wafers, substrates or parts of devices · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
the processing being a planarisation of insulating layers · CPC title
Acids · CPC title
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