Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers
US-10403753-B2 · Sep 3, 2019 · US
Two-dimensional materials integrated with multiferroic layers
US11024447B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11024447-B2 |
| Application number | US-201715819929-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 21, 2017 |
| Priority date | Nov 21, 2016 |
| Publication date | Jun 1, 2021 |
| Grant date | Jun 1, 2021 |
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Abstract
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The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.
First claim
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What is claimed: 1. A chemical sensor, comprising: a ferroelectric material layer; and a MoS 2 two-dimensional material layer provided on the ferroelectric material layer, wherein the ferroelectric material layer comprises an array of dipole domains in the ferroelectric material layer, and is effective to create corresponding n-type and p-type domains in the MoS 2 two-dimensional material. 2. The chemical sensor of claim 1 , wherein the n-type domains in the MoS 2 two-dimensional material detect electron-donating chemicals, and the p-type domains detect hole-donating chemicals.
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Classifications
Gated diodes · CPC title
- H10D62/882Primary
Graphene · CPC title
characterised by the materials · CPC title
Devices using spin-polarised carriers · CPC title
IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs · CPC title
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- What does patent US11024447B2 cover?
- The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce …
- Who is the assignee on this patent?
- Us Gov Sec Navy
- What technology area does this patent fall under?
- Primary CPC classification H10D62/882. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 01 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).