Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers

Patent metadata

Field	Value
Publication number	US-10403753-B2
Application number	US-201715819987-A
Country	US
Kind code	B2
Filing date	Nov 21, 2017
Priority date	Nov 21, 2016
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

First claim

What is claimed:

1. A heterostructure comprising:
a multiferroic material layer; and
a two-dimensional material layer provided directly on the multiferroic material layer,
wherein the multiferroic material layer comprises an array of polarization domains having different surface charges, and the different surface charges produce corresponding domains having different structural phases in the two-dimensional material,
wherein the polarization domains in the multiferroic ferroelectric material layer produce local electric fields and surface charges that penetrate the two-dimensional material layer, and
wherein the local electric fields and surface charges create local magnetic and non-magnetic domains in the two-dimensional material layer.

2. The heterostructure of claim 1 , wherein the multiferroic material layer is a ferroelectric material layer.

3. The heterostructure of claim 2 , wherein the ferroelectric material layer is selected from the group consisting of lead zirconate titanate (PZT), barium titanate, lead titanate, lead magnesium niobate-lead titanate (PMN-PT), and combinations thereof.

4. The heterostructure of claim 1 , wherein the multiferroic material layer is selected from the group consisting of BiMnO 3 , LaMnO 3 , and BiFeO 3 , and combinations thereof.

5. The heterostructure of claim 1 , wherein the two-dimensional material layer is selected from the group consisting of transition metal dichalcogenide (TMD), silicene, phosphorene, graphene, and combinations thereof.

6. The heterostructure of claim 5 , wherein the two-dimensional material layer is a TMD selected from the group consisting of MoS 2 , MoSe 2 , WS 2 , and WSe 2 .

7. A device comprising the heterostructure of claim 1 .

8. The device of claim 7 , wherein the device is selected from the group consisting of non-volatile memory, low power electronics, reprogrammable logic, chemical vapor sensors, and tunable optical devices.

9. A memory device, comprising:
a ferroelectric material layer; and
an transition metal dichalcogenide (TMD) two-dimensional material layer provided directly on the ferroelectric material layer,
wherein the ferroelectric material layer comprises an array of dipole domains having different surface charges, and the different surface charges produce corresponding magnetic and non-magnetic domains in the TMD two-dimensional material,
wherein the polarization domains in the ferroelectric material layer produce local electric fields and surface charges that penetrate the TMD two-dimensional material, and
wherein the local electric fields and surface charges create local magnetic and non-magnetic domains in the TMD two-dimensional material.

10. The memory device of claim 9 , wherein the magnetic domains in the TMD two-dimensional material reversibly encode 1 and 0 bits.

11. A method for forming a heterostructure, comprising:
providing a multiferroic material layer;
applying a local electric field to the multiferroic material layer, forming an array of polarization domains in the multiferroic layer having different surface charges;
providing a two-dimensional material layer directly on the multiferroic material layer having an array of polarization domains therein, wherein the different surface charges in the polarization domains produce metal-insulator phase transitions in corresponding domains in the two-dimensional material,
wherein the polarization domains in the multiferroic ferroelectric material layer produce local electric fields and surface charges that penetrate the two-dimensional material layer, and
wherein the local electric fields and surface charges create local magnetic and non-magnetic domains in the two-dimensional material layer.

12. The method of claim 11 , wherein the local electric field is applied by an atomic force microscope.

13. The method of claim 11 , wherein the two-dimensional material layer is provided using a technique selected from the group consisting of mechanical exfoliation, mechanical transfer, and growth directly on the multiferroic material layer.

14. The method of claim 11 , further comprising applying a global electric field to erase the polarization domains in the multiferroic layer.

15. The method of claim 14 , further comprising applying a local electric field to form a second array of polarization domains in the multiferroic layer.

16. The method of claim 11 , wherein the multiferroic material layer is a ferroelectric material layer, and the polarization domains comprise dipole domains.

Assignees

• Us Gov Sec Navy

Inventors

• Jonker Berend T
• Li Connie H
• Mccreary Kathleen M

Classifications

• H01F10/1933

  Perovskites · CPC title

• G11C13/0009

  RRAM elements whose operation depends upon chemical change · CPC title

• G11C11/14

  using thin-film elements · CPC title

• G01R33/09

  Magnetoresistive devices · CPC title

• G11C11/223

  using MOS with ferroelectric gate insulating film · CPC title