Monolithic platen

Patent metadata

Field	Value
Publication number	US-11020837-B2
Application number	US-201815965685-A
Country	US
Kind code	B2
Filing date	Apr 27, 2018
Priority date	Nov 14, 2017
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.

First claim

What is claimed is:

1. A chemical mechanical planarization (CMP) system, comprising:
a monolithic platen within a first platen housing, wherein the monolithic platen is formed of a single piece of material with a continuously non-concave top surface having no holes therein, wherein the monolithic platen comprises:
a first portion within a first opening of the first platen housing, and
a second portion within a second opening of the first platen housing, wherein the first portion has a different diameter than the second portion, and wherein the first and second portions form the single piece of material such that no interface exists between the first and second portions; and

a polishing fluid delivery conduit disposed above the monolithic platen, wherein the polishing fluid delivery conduit is configured to deliver slurry to the monolithic platen during performance of CMP.

2. The system of claim 1 , wherein:
the first opening comprises a first diameter, and
the second opening is continuous with the first opening, wherein the second opening comprises a second diameter different than the first diameter.

3. The system of claim 2 , further comprising:
a polishing station comprising the first platen housing; and
a cleaner.

4. The system of claim 2 , wherein an upper edge of the first platen housing is aligned with an upper surface of the monolithic platen.

5. The system of claim 2 , wherein the monolithic platen comprises one inside corner and the first platen housing comprises two inside corners.

6. The system of claim 2 , further comprising:
a second platen housing comprising:
a third opening comprising the first diameter, and
a fourth opening continuous with the third opening, the fourth opening comprising the second diameter;

a platen assembly within the second platen housing, wherein the platen assembly comprises:
an upper platen within the third opening, and
a lower platen below the upper platen within the fourth opening, wherein the upper platen and the lower platen have different diameters and are formed from two separate pieces.

7. The system of claim 6 , further comprising:
a polishing station comprising the first platen housing and the second platen housing; and
a robot configured to move a wafer to either the first platen housing or the second platen housing.

8. The system of claim 6 , further comprising a controller configured to control operation of the system.

9. The system of claim 6 , wherein a form factor of the platen assembly is the same as a form factor of the monolithic platen.

10. A chemical mechanical planarization (CMP) system, comprising:
a platen housing comprising:
a first opening comprising a first diameter, and
a second opening continuous with the first opening, the second opening comprising a second diameter different than the first diameter;

a platen within the platen housing, wherein the platen is formed of a single piece of material with a continuously non-concave top surface having no holes therein, wherein the platen comprises:
a first portion within the first opening, and
a second portion within the second opening, wherein the first and second portions have different diameters, and wherein the first and second portions form the single piece of material such that no interface exists between the first and second portions.

11. The system of claim 10 , wherein the first diameter is larger than the second diameter.

12. The system of claim 10 , wherein the platen is free of a laser module within the platen.

13. The system of claim 10 , wherein the first portion and the second portion experience different shear forces during chemical mechanical planarization.

14. The system of claim 10 , wherein the platen is formed of a single material and is solid within.

15. A chemical mechanical planarization (CMP) system, comprising:
a monolithic platen within a first platen housing, wherein the monolithic platen is formed of a single piece of material with a continuously non-concave top surface having no holes therein, wherein the monolithic platen comprises:
a first portion within a first opening of the first platen housing, and
a second portion within a second opening of the first platen housing, wherein the first portion has a different diameter than the second portion, and wherein the first and second portions form the single piece of material such that no interface exists between the first and second portions;

a polishing fluid delivery conduit above the monolithic platen, wherein the polishing fluid delivery conduit is configured to deliver slurry to the monolithic platen during performance of CMP; and
a platen assembly within a second platen housing, wherein the platen assembly comprises:
an upper platen within a third opening of the second platen housing, and
a lower platen below the upper platen and within the a fourth opening of the second platen housing, wherein the upper platen and the lower platen have different diameters and are formed from two separate pieces.

16. The system of claim 15 , wherein:
the first and third openings have a first diameter, and
the second opening is continuous with the first opening and the fourth opening is continuous with the third opening, wherein the second and fourth openings have a second diameter different than the first diameter.

17. The system of claim 16 , wherein an upper edge of the first platen housing is aligned with an upper surface of the monolithic platen.

18. The system of claim 15 , wherein the monolithic platen comprises one inside corner and the first platen housing comprises two inside corners.

19. The system of claim 15 , further comprising:
a polishing station comprising the first platen housing and the second platen housing; and
a robot configured to move a wafer to either the first platen housing or the second platen housing.

20. The system of claim 15 , wherein a form factor of the platen assembly is the same as a form factor of the monolithic platen.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lai Tsung-Lung
• Chen Cheng-Ping
• Chen Shih-Chung
• Peng Sheng-Tai

Classifications

• H10P72/3302

  Mechanical parts of transfer devices · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0472

  comprising at least one polishing chamber · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0422

  for wet etching · CPC title