Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process

Patent metadata

Field	Value
Publication number	US-11018015-B2
Application number	US-201816225347-A
Country	US
Kind code	B2
Filing date	Dec 19, 2018
Priority date	Dec 26, 2017
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

First claim

The invention claimed is:

1. A composition for forming an organic film, comprising
a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent,
or
a derivative of the condensate (A),
wherein
a sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass,
the formula (1) is:

where R 1 and R 2 each independently represent a hydrogen atom or an optionally substituted, saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms;
0≤m≤2,
0≤n≤2, and
m+n=2;
an amount of a sulfonic acid compound shown by the following formula (1-2) present in the dihydroxynaphthalene is 100 ppm or less in terms of mass and in terms of sulfur content, and
the formula (1-2) is:

where n, m, R 1 , and R 2 are as described above.

2. The composition for forming an organic film according to claim 1 , wherein the dihydroxynaphthalene is 1,5-dihydroxynaphthalene or 2,7-dihydroxynaphthalene.

3. The composition for forming an organic film according to claim 1 , wherein the condensation agent is formaldehyde, paraformaldehyde, hydroxybenzaldehyde, or hydroxynaphthylaldehyde.

4. The composition for forming an organic film according to claim 1 , wherein the derivative of the condensate (A) is a condensate (B) obtained by reacting the condensate (A) with a modification agent shown by the following formula (2),
X—R 4 —C≡C—R 3   (2)

wherein
X represents chlorine, bromine, or iodine;
R 3 represents hydrogen or a monovalent organic group having 1 to 10 carbon atoms; and
R 4 represents a divalent organic group having 1 to 10 carbon atoms.

5. The composition for forming an organic film according to claim 1 , further comprising one or both of an acid generator and a crosslinking agent.

6. A substrate for manufacturing a semiconductor device, comprising an organic film on the substrate, the organic film being formed by curing the composition for forming an organic film according to claim 1 .

7. A method for forming an organic film employed in a semiconductor device manufacturing process, the method comprising:
spin-coating a body to be processed with the composition for forming an organic film according to claim 1 ; and
heating the body to be processed coated with the composition for forming an organic film under an inert gas atmosphere at a temperature of 50° C. or higher to 600° C. or lower within a range of 10 seconds to 7200 seconds to obtain a cured film.

8. A method for forming an organic film employed in a semiconductor device manufacturing process, the method comprising:
spin-coating a body to be processed with the composition for forming an organic film according to claim 1 ;
heating the body to be processed coated with the composition for forming an organic film in air at a temperature of 50° C. or higher to 400° C. or lower within a range of 5 seconds to 3600 seconds to form a coating film; and
then heating the body to be processed having the formed coating film under an inert gas atmosphere at a temperature of 400° C. or higher to 600° C. or lower within a range of 10 seconds to 7200 seconds to obtain a cured film.

9. The method for forming an organic film according to claim 7 , wherein the inert gas has an oxygen concentration of 1% or less.

10. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film composition;
forming a resist upper layer film on the silicon-containing resist middle layer film from a resist upper layer film composition composed of a photoresist composition;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; and
further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

11. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film composition;
forming a resist upper layer film on the silicon-containing resist middle layer film from a resist upper layer film composition composed of a photoresist composition;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask;
further forming a silicon oxide film, a silicon nitride film, or a silicon oxynitride film on the organic film having the transferred pattern by CVD or ALD;
removing the organic-film patterned portion by etching, so that a pattern pitch is made ½ of that of the pattern transferred to the organic film; and
then transferring the pattern to the body to be processed by etching using the silicon oxide film, the silicon nitride film, or the silicon oxynitride film having the formed pattern as a mask.

12. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film composition;
forming an organic antireflective film on the silicon-containing resist middle layer film;
forming a resist upper layer film on the organic antireflective film from a resist upper layer film composition composed of a photoresist composition, so that a 4-layered film structure is constructed;
forming a circuit pattern in the resist upper layer film;
transferring the pattern to the organic antireflective film and the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed circuit pattern as a mask;
transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; and
further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

13. A patterning process comprising:
forming an organic film on a body to be processed from the composition for forming an organic film according to claim 1 ;
forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film composition;
forming an organic antireflective film on the silicon-containing resist middle layer film;
forming a resist upper layer film on the organic antireflective film from a resist upper layer film composition composed of a photoresist composition, so tha

Assignees

• Shinetsu Chemical Co

Inventors

• Ogihara Tsutomu
• Kori Daisuke
• Tachibana Seiichiro
• Biyajima Yusuke
• Kobayashi Naoki
• Noda Kazumi

Classifications

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• G03F7/09 Primary

  characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title

• G03F7/0752 Primary

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title