Composition for TiN hard mask removal and etch residue cleaning

Patent metadata

Field	Value
Publication number	US-11017995-B2
Application number	US-201916516405-A
Country	US
Kind code	B2
Filing date	Jul 19, 2019
Priority date	Jul 26, 2018
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

First claim

The invention claimed is:

1. A composition for selectively removing at least one of titanium nitride and photoresist etch residue material from the surface of a microelectronic device having same thereof, said composition consisting of:
a solvent which is water and/or one or more non-aqueous solvents;
tetraethylammonium hydroxide (TEAH);
triammonium citrate (TAC);
a metal corrosion inhibitor selected from the group consisting of sorbitol, benzotriazole (BZT), PEG 400, pyrazole and theophylline; and
an oxidizing stabilizer selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), gluconic acid and N-2-bis(carboxymethyl)aminoethyl-N-(2-hydroxy ethyl) glycine (HEDTA);
wherein the composition has a pH ranging from 5.5 to 14.

2. The composition of claim 1 , wherein the metal corrosion inhibitor is sorbitol.

3. The composition of claim 1 , wherein the metal corrosion inhibitor is benzotriazole (BZT).

4. The composition of claim 1 , wherein the metal corrosion inhibitor is theophylline.

5. The composition of claim 1 , wherein the metal corrosion inhibitor is PEG 400.

6. The composition of claim 1 , wherein the metal corrosion inhibitor is pyrazole.

7. The composition of claim 1 , wherein the oxidizing stabilizer is ethylenediaminetetraacetic acid (EDTA).

8. The composition of claim 1 , wherein the oxidizing stabilizer is gluconic acid.

9. The composition of claim 1 , wherein the oxidizing stabilizer is N-2-bis(carboxymethyl)aminoethyl-N-(2-hydroxyethyl)glycine (HEDTA).

10. The composition of claim 1 consisting of:
water;
tetraethylammonium hydroxide (TEAH);
triammonium citrate (TAC);
sorbitol; and
ethylenediaminetetraacetic acid (EDTA).

11. The composition of claim 1 consisting of:
about 87 wt % water;
about 10 wt % to about 11 wt % of neat tetraethylammonium hydroxide (TEAH);
about 1 wt % triammonium citrate (TAC);
about 1 wt % to about 1.1 wt % sorbitol; and
about 0.0125 wt % ethylenediaminetetraacetic acid (EDTA).

12. The composition of claim 1 , wherein the solvent is water.

13. The composition of claim 1 , wherein the solvent is one or more non-aqueous solvents selected from the group consisting of sulfolane, dimethyl sulfoxide (DMSO), dimethyl sulfone (DMSO 2 ), DMAC, n-methylpyrrolidone (NMP), diethylene glycol butyl ether, proplyglycol, ethylene glycol, dipropyleneglycolmethyl ether, tripropyleneglycolmethyl ether and combinations thereof.

14. A system for selectively removing titanium nitride from a surface of a microelectronic device, comprising: a semiconductor device comprising titanium nitride and a second material selected from the group consisting of Cu, Co, low-k dielectric material and combinations thereof, and the composition of claim 1 for selectively removing the titanium nitride, wherein the titanium nitride and the second material are in direct contact with the composition.

15. A method of selectively removing titanium nitride comprising: providing a semiconductor device comprising the titanium nitride and a second material selected from the group consisting of Cu, Co, low-k dielectric material; diluting the composition of claim 1 with a solvent to form a diluted composition; and contacting the semiconductor device with the diluted composition.

16. A method of selectively removing titanium nitride comprising: providing a semiconductor device comprising the titanium nitride and a second material selected from the group consisting of Cu, Co, low-k dielectric material; diluting the composition of claim 10 with a solvent to form a diluted composition; and contacting the semiconductor device with the diluted composition.

Assignees

• Versum Mat Us Llc

Inventors

• Chen Chao-Hsiang
• Lee Yi-Chia
• Liu Wen Dar
• Chang Chung-Yi

Classifications

• H10P50/268

  of silicon-containing layers · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/667

  by liquid etching only · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title