Ion source

Patent metadata

Field	Value
Publication number	US-11017974-B2
Application number	US-201715795586-A
Country	US
Kind code	B2
Filing date	Oct 27, 2017
Priority date	Nov 11, 2016
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

First claim

What is claimed:

1. An ion implanter comprising:
an ion source including:
a gas source for supplying a gas;
an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber, the ionization chamber adapted to form a plasma from the gas, wherein the plasma generates a plurality of ions; and
two or more extraction electrodes at the exit aperture of the ionization chamber for extracting the plurality of ions from the ionization chamber in the form of an ion beam, at least one of the extraction electrodes comprising a set of discrete rods forming a plurality of slits in the at least one extraction electrode from which the ion beam is extracted as multiple beam segments, the plurality of slits are configured to enable at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber, wherein each rod in the set of discrete rods extends along an axis parallel to the longitudinal axis of the ionization chamber; and

an analyzer magnet having a curved chamber with a bottom wall, a top wall, and multiple side walls defining a curved path between a first end and a second end of the analyzer magnet chamber, each of the bottom, top and side walls at least partially surrounded by magnetic coils to bend the beam segments along the curved path and deflect the beam segments in a dispersive plane, the side walls intersect the dispersive plane,
wherein each of the plurality of slits is elongated to extend over substantially a length of an opening of each of the two or more corresponding extraction electrodes and the length being (i) substantially parallel to the longitudinal axis of the ionization chamber, (ii) perpendicular to the dispersive plane of the analyzer magnet, and (iii) longer than a width of the opening that is perpendicular to the length and parallel to the dispersive plane, such that the beam segments are deflected in the dispersive plane of the analyzer magnet, the dispersive plane being substantially parallel to the width of the opening; and
wherein the two or more extraction electrodes include a plasma electrode and a second extraction electrode, a first cross section of each rod in the set of discrete rods for the plasma electrode is situated at a rotated angle that is different from the angle at which the a second cross section of each rod in a set of discrete rods for the second extraction electrode is situated, the first and second cross sections having the same shape.

2. The ion implanter of claim 1 , wherein one end of each rod in the set of discrete rods for the at least one extraction electrode is fixed and another end of each rod in the set of discrete rods is slideable.

3. The ion implanter of claim 2 , wherein the same shape of the first and second cross sections is square.

4. The ion implanter of claim 1 , wherein the angle is about 45 degrees.

5. The ion implanter of claim 1 , wherein at least one of the two or more extraction electrodes is configured to physically contact a conductive elastic member connected to a vacuum chamber within which the ion source is installed, the conductive elastic member configured to set a voltage of the at least one electrode.

6. The ion implanter of claim 5 , wherein the at least one electrode is a suppression electrode or a puller electrode.

7. The ion implanter of claim 1 , wherein at least one of the two or more extraction electrodes is configured to physically contact a conductive rod connected to a vacuum chamber within which the ion source is installed, the conductive rod configured to set a voltage of the at least one electrode.

8. The ion implanter of claim 7 , wherein the at least one electrode is a suppression electrode or a puller electrode.

9. The ion implanter of claim 7 , wherein a first end of the conductive rod is in physical contact with the at least one electrode and a second end of the conductive rod is in communication with a spring assembly configured to adjust a position of the at least one electrode by imparting a force on the at least one electrode via the conductive rod.

10. The ion implanter of claim 1 , wherein the ion source is located external to the analyzer magnet adjacent to the first end.

11. The ion implanter of claim 1 , wherein the analyzer magnet comprises a mass resolving slit disposed in the chamber and adjacent to the second end.

12. The ion implanter of claim 11 , wherein the analyzer magnet comprises a magnetic focusing lens having at least a portion disposed outside of the chamber, the magnetic focusing lens configured to focus, defocus or wiggle the ion beam in a non-dispersive plane after the ion beam passes through the mass resolving slit.

13. The ion implanter of claim 12 , wherein the magnetic focusing lens comprises an upper zone having a pair of upper magnetic coils and a lower zone having a pair of lower magnetic coils.

14. The ion implanter of claim 13 , wherein the chamber of the analyzer magnet defines a curved central beam axis, and widths of the chamber perpendicular to the curved central beam axis vary along the curved central beam axis such that a width of the first end is larger than a width of the second end.

15. The ion implanter of claim 14 , wherein the magnetic focusing lens is located adjacent to the narrower second end.

16. The ion implanter of claim 14 , wherein a second magnetic focusing lens is disposed outside of the chamber of the analyzer magnet adjacent to the first end.

17. The ion implanter of claim 16 , wherein the mass resolving slit is located between the first magnetic focusing lens and the second magnetic focusing lens.

18. The ion implanter of claim 13 , wherein at least one of applied current or a magnetic field direction of the pair of upper magnetic coils or the pair of lower magnetic coils is adjustable to provide the focus, defocus or wiggle function.

19. The ion implanter of claim 1 , wherein the ionization chamber is elongated and the longitudinal axis extends along an elongated length of the ionization chamber.

Assignees

• Nissin Ion Equipment Co Ltd

Inventors

• Hahto Sami K
• Sacco George

Classifications

• H01J37/08 Primary

  Ion sources; Ion guns · CPC title

• H01J37/3171

  for ion implantation · CPC title

• H01J37/05

  Electron or ion-optical arrangements for separating electrons or ions according to their energy {or mass}(particle separator tubes H01J49/00) · CPC title

• H01J2237/057

  Energy or mass filtering · CPC title

• H01J27/024 Primary

  Extraction optics, e.g. grids · CPC title