Ion Beam Line

Patent metadata

Field	Value
Publication number	US-2016005570-A1
Application number	US-201514831225-A
Country	US
Kind code	A1
Filing date	Aug 20, 2015
Priority date	Mar 15, 2013
Publication date	Jan 7, 2016
Grant date	—

Abstract

In one aspect, an ion implantation system is disclosed, which comprises a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, and an electrostatic bend disposed downstream of the deceleration system for causing a deflection of the ion beam. The electrostatic bend includes three tandem electrode pairs for receiving the decelerated beam, where each electrode pair has an inner and an outer electrode spaced apart to allow passage of the ion beam therethrough. Each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the middle electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the middle electrode pair.

First claim

What is claimed is:

1 . An ion implantation system, comprising:
a deceleration system configured to receive an ion beam and decelerate the ion beam at a deceleration ratio of at least 2, an electrostatic bend disposed downstream of said deceleration system for causing a deflection of the ion beam, said electrostatic bend comprising: a first electrode pair disposed downstream of the deceleration system for receiving said decelerated beam, said first electrode pair having an inner and an outer electrode spaced apart to allow passage of the ion beam therebetween, a second electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween, and an end electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween, wherein said electrode pairs are configured to be independently biased.

2 . The ion implantation system of claim 1 , wherein each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the second electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the second electrode pair.

3 . The ion implantation system of claim 1 , wherein said deceleration ratio is in a range of about 5 to about 100.

4 . The ion implantation system of claim 2 , wherein an inner electrode of each of said electrode pairs is held at an electric potential less than an electric potential at which a respective outer electrode of that electrode pair is held.

5 . The ion implantation system of claim 2 , wherein the outer electrodes of the first and the end electrode pairs are held at a first electric potential (V 1 ) and the inner electrodes of the first and the end electrode pairs are held at a second electric potential (V 2 ).

6 . The ion implantation system of claim 5 , wherein the inner electrode of the second electrode pair is electrically grounded and the outer electrode of the second electrode pair is held at a third electric potential (V 3 ).

7 . The ion implantation system of claim 5 , wherein V 1 is more positive than V 2 .

8 . The ion implantation system of claim 1 , wherein said deceleration system comprises a deceleration element separated from a downstream focusing element such that a gap is defined therebetween.

9 . The ion implantation system of claim 1 , further comprising an ion source for generating the ion beam.

10 . The ion implantation system of claim 18 , further comprising an analyzer magnet disposed downstream of the ion source and upstream of the deceleration system for receiving the ion beam generated by the ion source and generating a mass-selected ion beam.

11 . The ion implantation system of claim 1 , further comprising a split lens disposed downstream of said electrostatic bend, said split lens comprising
a first electrode pair having a curved downstream end face, a second electrode pair having a curved upstream end face, wherein said end faces of the two electrode pairs are separated from one another to form a gap therebetween.

12 . The ion implantation system of claim 11 , wherein said first and second electrode pairs of the split lens are configured to be independently biased.

13 . The ion implantation system of claim 12 , wherein said first and second electrode pairs of the split lens are biased so as to generate an electric field in said gap for focusing the ion beam passing through the split lens.

14 . An ion implantation system, comprising
an electrostatic bend for causing deflection of an ion beam, said electrostatic bend comprising: a first electrode pair having an inner and outer electrode spaced apart to allow passage of an ion beam therebetween, a second electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow passage of the ion beam therebetween, and an end electrode pair disposed downstream of said second electrode pair and having an inner and outer electrode spaced apart to allow passage of the ion beam therebetween, wherein each of the electrodes of the end electrode pair is held at an electric potential less than an electric potential at which any of the electrodes of the second electrode pair is held and the electrodes of the first electrode pair are held at a lower electric potential relative to the electrodes of the second electrode pair, and wherein an inner electrode of each of said electrode pairs is held at an electric potential less than an electric potential at which a respective outer electrode of that electrode pair is held.

15 . The ion implantation system of claim 14 , wherein the outer electrodes of the first and the end electrode pairs are held at a first electric potential (V 1 ) and the inner electrodes of the first and the end electrode pairs are held at a second electric potential (V 2 ).

16 . The ion implantation system of claim 15 , wherein the inner electrode of the second electrode pair is electrically grounded and the outer electrode of the second electrode pair is held at a third electric potential (V 3 ).

17 . The ion implantation system of claim 16 , wherein V 1 is more positive than V 2 .

18 . An ion implantation system, comprising
an electrostatic bend for receiving an ion beam and causing a deflection thereof, a split lens disposed downstream of said electrostatic bend, said split lens comprising: a first electrode pair having a curved downstream end face, a second electrode pair having a curved upstream end face, wherein said first and second electrode pairs are configured to be independently biased and said end faces of the two electrode pairs are separated from one another to form a gap therebetween.

19 . The ion implantation system of claim 18 , wherein said first and second electrode pairs are biased so as to generate an electric field in said gap for focusing the ion beam passing through the split lens.

20 . The ion implantation system of claim 18 , wherein said electrostatic bend comprises:
a first electrode pair disposed downstream of the deceleration system for receiving said decelerated beam, said first electrode pair having an inner and an outer electrode spaced apart to allow passage of the ion beam therebetween, a second electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween, and an end electrode pair disposed downstream of said first electrode pair and having an inner and an outer electrode spaced apart to allow the passage of the ion beam therebetween, wherein said electrode pairs are configured to be independently biased.

Assignees

• Nissin Ion Equipment Co Ltd

Inventors

• Hahto Sami K
• Yamamoto Tetsuro

Classifications

• H01J2237/151

  Electrostatic means · CPC title

• H01J2237/30472

  Controlling the beam · CPC title

• H01J2237/121

  characterised by shape · CPC title

• H01J2237/10

  Lenses · CPC title

• H01J2237/24542

  Beam profile · CPC title