Coaxial wire and optical fiber trace via hybrid structures and methods to manufacture

Patent metadata

Field	Value
Publication number	US-11016255-B2
Application number	US-201916661480-A
Country	US
Kind code	B2
Filing date	Oct 23, 2019
Priority date	Nov 9, 2016
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

A method of forming a coaxial wire that includes providing a sacrificial trace structure using an additive forming method, the sacrificial trace structure having a geometry for the coaxial wire, and forming a continuous seed metal layer on the sacrificial trace structure. The sacrificial trace structure may be removed and a first interconnect metal layer may be formed on the continuous seed layer. An electrically insulative layer may then be formed on the first interconnect metal layer, and a second interconnect metal layer is formed on the electrically insulative layer. Thereafter, a dielectric material is formed on the second interconnect metal layer to encapsulate a majority of an assembly of the first interconnect metal layer, electrically insulative layer and second interconnect metal layer that provides said coaxial wire. Ends of the coaxial wire may be exposed through opposing surfaces of the dielectric material to provide that the coaxial wire extends through that dielectric material.

First claim

What is claimed is:

1. An wiring structure comprising:
a dielectric base material; and
an interconnect structure including at least one coaxial wire extending through said dielectric base material from a first side of the dielectric base material to an opposing second side of the dielectric base material, wherein at least one coaxial wire extends from the first side of the dielectric base material to the second side of said dielectric base material has at least one angled portion.

2. The wiring structure of claim 1 , wherein said electrically insulating layer comprises a dielectric comprised of an oxide, nitride or oxynitride material.

3. The wiring of claim 1 , wherein said electrically insulating layer comprises a polymer selected from the group consisting of parylene, organosiloxanes, epoxies, acrylates, urethanes, silicones, polyimide, poly(phenylene oxide), polyamide, polyester, PEEK, polyethelyene naphthalate, polyetherimide, fluoropolymers, and combinations thereof.

4. The wiring structure of claim 1 , wherein the first metal interconnect layer is comprised of a metal selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum and combinations thereof.

5. The wiring structure of claim 1 , wherein the second metal interconnect layer is comprised of a metal selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum and combinations thereof.

6. A structure including an optical fiber comprising:
a dielectric base material; and
a polymeric optical fiber including a core encased in a cladding, the polymeric optical fiber extending through said dielectric base material from a first side of the dielectric base material to an opposing second side of the dielectric base material, wherein at least one polymeric optical fiber has at least one angled portion.

7. The structure of claim 6 , wherein the core of the polymeric optical fiber carries an optical signal.

8. The structure of claim 6 , wherein the cladding of the polymeric optical fiber carries an electrical signal.

9. The structure of claim 7 , wherein the core is composed of a polymer.

10. The structure of claim 9 , wherein said polymer is selected from the group consisting of PMMA, polystyrene, silicone resin and combinations thereof.

11. The structure of claim 8 , wherein the cladding is comprised of a metal.

12. The structure of claim 11 , wherein the at least one metal is selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum and combinations thereof.

13. The structure of claim 9 , wherein the polymeric optical fiber is formed using an additive forming method.

14. The structure of claim 13 , wherein the additive forming method is selected from the group consisting of stereolithography, self-propagating waveguide formation, fused deposition modeling (FDM), selective laser sintering (SLS), continuous liquid interface production (CLIP), digital light processing (DLP), material jetting and combinations thereof.

15. A coaxial wire structure comprising:
a dielectric base material; and
a metal based interconnect structure extending through said dielectric base material from a first side of the dielectric base material to an opposing second side of the dielectric base material, wherein at least one metal line of the metal based interconnect structure that extends from the first side of the dielectric base material to the second side of said dielectric base material has at least one angled portion that is a single angle connecting two straight portions extending continuously from a first side to a second side of the dielectric base material, the metal based interconnect structure being an assembly of a first metal interconnect layer and a second metal interconnect layer separated from each other by an electrically insulating layer.

16. The coaxial wire structure of claim 15 , wherein said electrically insulating coating comprises a dielectric comprised of an oxide, nitride or oxynitride material.

17. The coaxial wire structure of claim 15 , wherein said electrically insulating coating comprises a polymer selected from the group consisting of parylene, organosiloxanes, epoxies, acrylates, urethanes, silicones, polyimide, poly(phenylene oxide), polyamide, polyester, PEEK, polyethelyene naphthalate, polyetherimide, fluoropolymers, and combinations thereof.

18. The coaxial wire structure of claim 15 , wherein the first metal interconnect layer is comprised of a metal selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum and combinations thereof.

19. The coaxial wire structure of claim 15 , wherein the second metal interconnect layer is comprised of a metal selected from the group consisting of nickel, aluminum, copper, tantalum, titanium, platinum and combinations thereof.

20. The coaxial wire structure of claim 16 , wherein the metal based interconnect structure carries an electrical signal.

Assignees

• IBM

Inventors

• Buvid Daniel J
• Campbell Eric J
• Czaplewski Sarah K
• Steffen Christopher W

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10W70/095

  of vias therein · CPC title

• H10W70/69

  Insulating materials thereof · CPC title