Solid PCD with transition layers to accelerate full leaching of catalyst

Patent metadata

Field	Value
Publication number	US-11014157-B2
Application number	US-201515536875-A
Country	US
Kind code	B2
Filing date	Nov 19, 2015
Priority date	Dec 17, 2014
Publication date	May 25, 2021
Grant date	May 25, 2021

Abstract

A method of making a polycrystalline diamond compact includes forming a first layer of polycrystalline diamond precursor materials comprising diamond particles and a first concentration of catalyst, forming a second layer of polycrystalline diamond precursor materials comprising diamond particles and a second concentration of catalyst, and placing a layer of an infiltrant material in the proximity of the first or the second layer of polycrystalline diamond precursor materials. The second concentration of catalyst is greater than the first concentration of catalyst. The infiltrant material is a catalyst. The first layer and the second layer are sintered under high-pressure high-temperature conditions in the presence of the infiltrant material to form the polycrystalline diamond compact. At least a portion of the catalyst is leached from the polycrystalline diamond compact.

First claim

What is claimed is:

1. A method of making a polycrystalline diamond compact, comprising:
forming a first layer of polycrystalline diamond precursor materials comprising diamond particles and a first concentration of a first catalyst;
forming a second layer of polycrystalline diamond precursor materials comprising diamond particles and a second concentration of the first catalyst, wherein the second concentration of the first catalyst is greater than the first concentration of the first catalyst;
placing a layer of a catalytic infiltrant material in the proximity of at least one of the first layer of polycrystalline diamond precursor materials or the second layer of polycrystalline diamond precursor materials;
sintering the first layer and the second layer under high-pressure high-temperature conditions in the presence of the catalytic infiltrant material to form the polycrystalline diamond compact, thereby transforming the first layer into a close-packed polycrystalline diamond working layer and the second layer into a loose-packed polycrystalline diamond non-working layer, wherein both the close-packed polycrystalline diamond working layer and the loose-packed polycrystalline diamond non-working layer form an outer surface of the polycrystalline diamond compact; and
leaching at least a portion of the first catalyst from the polycrystalline diamond compact.

2. The method of claim 1 , wherein the catalyst is one or more selected from metals from Group VIII of the Periodic Table.

3. The method of claim 1 , comprising leaching the polycrystalline diamond compact until it contains less than 5 wt % of catalyst.

4. The method of claim 1 , comprising forming channels throughout the working layer and non-working layer of the polycrystalline diamond compact, wherein the channels formed in the loose-packed polycrystalline diamond non-working layer have a larger pore size than the channels in the working layer.

5. The method of claim 1 , wherein the first layer and the second layer comprise diamond particles of different average sizes.

6. The method of claim 5 , wherein the average size of the diamond particles in the first layer is within the range of 5-30 microns and the average size of the diamond particles in the second layer is within the range of 10-50 microns.

7. The method of claim 1 , wherein prior to sintering and leaching the first layer comprises less than 5 wt % of catalyst and the second layer comprises more than 5 wt % of catalyst.

8. The method of claim 1 , wherein the total amount of catalyst is greater than 4 wt % of the total amount of diamond particles prior to sintering.

9. The method of claim 1 , wherein the first layer forms a circumferential cutting edge of the polycrystalline diamond compact and the second layer extends axially away from the first layer, radially away from the first layer, or both axially and radially away from the first layer.

10. The method of claim 1 , wherein a thickness of the first layer ranges from at least 1 mm up to 1 mm less than the total thickness of the polycrystalline diamond compact.

11. The method of claim 1 , wherein the leaching also leaches at least a portion of the catalytic infiltrant material from the polycrystalline diamond compact.

Assignees

• Smith International
• Schlumberger Technology Corp

Inventors

• Bao Yahua

Classifications

• C22C1/1036

  starting from a melt · CPC title

• B22F2304/10

  Micron size particles, i.e. above 1 micrometer up to 500 micrometer · CPC title

• B22F2005/001

  Cutting tools, earth boring or grinding tool other than table ware · CPC title

• C22B23/0415

  with acids or salt solutions except ammonium salts solutions · CPC title

• C23F1/02 Primary

  Local etching · CPC title