Manufacturing method of SiC ingot

Patent metadata

Field	Value
Publication number	US-11008670-B2
Application number	US-201716466369-A
Country	US
Kind code	B2
Filing date	Dec 22, 2017
Priority date	Dec 26, 2016
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A manufacturing method of a SiC ingot includes a crystal growth step of growing a crystal on a principal plane having an offset angle with respect to a {0001} plane, in which, at least in a latter half growth step of the crystal growth step, after the crystal in the crystal growth step grows 7 mm or more from the principal plane, and in which, the crystal is grown by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.

First claim

The invention claimed is:

1. A manufacturing method of a SiC ingot, comprising:
a step of setting a surface having an offset angle with respect to a {0001} plane in a seed crystal as a principal plane of the seed crystal;
a step of installing the seed crystal on a crystal installation portion, while the principal plane of the seed crystal faces a source; and
a step of growing a crystal on the principal plane of the seed crystal having an offset angle with respect to a {0001} plane,
wherein, the step of growing the crystal includes,
supplying a source gas to the seed crystal,
growing the crystal on the principal plane of the seed crystal,
after growing 7 mm or more of the crystal from the principal plane, growing the crystal by setting an acute angle, between the {0001} plane and an inclined plane which is perpendicular to a cut section cut along an offset direction and passes through both a center of a crystal growth surface and an offset downstream end portion of the crystal growth surface, to be equal to or more than an angle smaller than an offset angle by 2° and equal to or less than 8.6°.

2. The manufacturing method of a SiC ingot according to claim 1 ,
wherein, in all crystal growth processes of the step of growing the crystal, the acute angle is set to be equal to or more than the angle smaller than the offset angle by 2° and equal to or less than 8.6°.

3. The manufacturing method of a SiC ingot according to claim 1 ,
wherein the offset angle is larger than 0° and 4° or less.

4. The manufacturing method of a SiC ingot according to claim 1 ,
wherein, in the step of growing the crystal after growing 7 mm or more of the crystal from the principal plane, an angle change in the acute angle is set to 3° or less.

5. The manufacturing method of a SiC ingot according to claim 1 ,
wherein, in the step of growing the crystal after growing 7 mm or more of the crystal from the principal plane, crystal growth on an offset downstream side and crystal growth on an offset upstream side are symmetrical to each other with respect to a plane that passes through the center of the crystal growth surface and is orthogonal to the cut section.

6. The manufacturing method of a SiC ingot according to claim 1 , the acute angle is controlled by a temperature distribution during growing the crystal.

7. The manufacturing method of a SiC ingot according to claim 6 , the temperature distribution is controlled by two upper and lower heaters including a heater facing a side plane of a place where the seed crystal is disposed and a heater facing a side plane of a place where the source is disposed.

8. The manufacturing method of a SiC ingot according to claim 6 , the temperature distribution is controlled by moving a crucible during growing of the crystal.

Assignees

• Showa Denko Kk

Inventors

• Fujikawa Yohei
• Uehigashi Hideyuki

Classifications

• C30B23/00 Primary

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title

• C30B33/10

  in solutions or melts · CPC title

• C30B23/06 Primary

  Heating of the deposition chamber, the substrate or the materials to be evaporated · CPC title

• C30B29/36

  Carbides · CPC title