Methods of etching conductive features, and related devices and systems

Patent metadata

Field	Value
Publication number	US-11006528-B2
Application number	US-201916507358-A
Country	US
Kind code	B2
Filing date	Jul 10, 2019
Priority date	Dec 12, 2016
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

A method of making a device patterned with one or more electrically conductive features includes depositing a conductive material layer over an electrically insulating surface of a substrate, depositing an anti-corrosive material layer over the conductive material layer, and depositing an etch-resist material layer over the anti-corrosive material layer. The etch-resist material layer may be deposited over the anti-corrosive material layer, and the anti-corrosive material layer forming a bi-component etch mask in a pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer, the covered portions being positioned at locations corresponding to one or more conductive features of the device. A wet-etch process is performed to remove the exposed portions of the conductive material layer from the electrically insulating substrate, and the bi-component etch mask is removed to expose the remaining conductive material. Systems and devices relate to devices with patterned features.

First claim

What is claimed is:

1. A method of making a device patterned with one or more electrically conductive features, the method comprising:
depositing a conductive material layer over an electrically insulating surface of a substrate;
depositing a primer layer in a pattern over the conductive material layer;
depositing an etch-resist material layer over the primer layer;
reacting the primer layer and the etch-resist material layer to form a bi-component etch mask in the pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer;
performing a wet-etch process to remove the exposed portions of the conductive material layer from the electrically insulating surface;
protecting a portion of the conductive material layer from being removed during the wet-etch process, the portion being located at a sidewall of the conductive material layer under the bi-component etch mask; and
removing the bi-component etch mask to expose conductive material remaining from the covered portions of the conductive material layer, thereby forming the one or more electrically conductive features of the device.

2. The method of claim 1 , wherein depositing the primer layer over the conductive material layer comprises depositing a polymer over the conductive material layer.

3. The method of claim 1 , wherein depositing the primer layer over the conductive material layer comprises depositing an organic material over the conductive material layer.

4. The method of claim 3 , wherein the organic material is chosen from a material comprising one or more -imine groups, a material comprising one or more -amine groups, a material comprising one or more -azole groups, and a material comprising one or more hydrazine groups.

5. The method of claim 3 , wherein the organic material comprises an amino acid.

6. The method of claim 1 , further comprising irradiating portions of the etch-resist material layer with light, the irradiated portions corresponding locations of the one or more electrically conductive features.

7. The method of claim 6 , wherein irradiating portions of the etch-resist material with light comprises using at least one of laser direct writing or photomask exposure.

8. The method of claim 1 , wherein depositing the etch-resist material layer comprises depositing the etch-resist material layer using at least one of inkjet printing, slot die coating, spin coating, or lamination.

9. The method of claim 1 , wherein depositing the primer layer comprises depositing the primer layer using at least one of inkjet printing, slot die coating, spin coating, or lamination.

10. The method of claim 1 , wherein the etch-resist material layer is deposited so as to have a thickness of less than or equal to 15 μm.

11. The method of claim 1 , wherein the etch-resist material layer is deposited so as to have a thickness of less than or equal to 5 μm.

12. The method of claim 1 , wherein, in a dried state, a thickness of the primer layer ranges from 0.01 μm to 5 μm.

13. The method of claim 1 , wherein the conductive material layer comprises a metal.

14. The method of claim 1 , wherein the conductive material layer comprises copper.

15. A method of making a device patterned with one or more electrically conductive features, the method comprising:
depositing a conductive material layer over an electrically insulating surface of a substrate;
depositing a primer layer in a pattern over the conductive material layer;
depositing an etch-resist material layer over the primer layer, the etch-resist material layer and the primer layer forming a bi-component etch mask in the pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer;
performing a wet-etch process to remove the exposed portions of the conductive material layer from the electrically insulating surface;
protecting a portion of the conductive material layer from being removed during the wet-etch process, the portion being located at a sidewall of the conductive material layer under the bi-component etch mask; and
removing the bi-component etch mask to expose conductive material remaining from the covered portions of the conductive material layer, thereby forming the one or more electrically conductive features of the device, wherein protecting the portion of the conductive material layer from being removed comprises dissociating material exhibiting an anti-corrosive property from the bi-component etch mask and adsorbing the dissociated material to the portion of the conductive material layer at the sidewall under the bi-component etch mask.

16. A method of making a device patterned with one or more electrically conductive features, the method comprising:
depositing a conductive material layer over an electrically insulating surface of a substrate;
depositing an organic primer layer in a pattern over the conductive material layer;
depositing an etch-resist material layer over the primer layer, the etch-resist material layer and the primer layer forming a bi-component etch mask in the pattern resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer;
performing a wet-etch process to remove the exposed portions of the conductive material layer from the electrically insulating surface;
protecting a portion of the conductive material layer from being removed during the wet-etch process, the portion being located at a sidewall of the conductive material layer under the bi-component etch mask; and
removing the bi-component etch mask to expose conductive material remaining from the covered portions of the conductive material layer, thereby forming the one or more electrically conductive features of the device, wherein the organic material comprises a Schiff Base.

17. A method of making a device comprising one or more electrically conductive features, the method comprising:
depositing an organic material primer layer over a conductive material layer on an electrically insulating surface of a substrate, the organic material primer layer being chosen from a material comprising one or more -azole groups and a material comprising a Schiff Base,
depositing an etch-resist material layer over the primer layer, the etch-resist material layer and the primer layer forming a bi-component etch mask resulting in covered portions of the conductive material layer and exposed portions of the conductive material layer;
performing a wet-etch process to remove the exposed portions of the conductive material layer from the electrically insulating substrate; and
removing the bi-component etch mask to expose conductive material remaining from the covered portions of the conductive material layer, thereby forming the one or more electrically conductive features of the device.

18. The method of claim 17 , further comprising protecting a portion of the conductive material layer from being removed during the wet-etch process, the portion being located at a sidewall of the conductive material layer under the bi-component etch mask.

19. The method of claim 17 , further comprising irradiating portions of the etch-resist material layer with light, the irradiated portions corresponding to the one or more electrically conductive features.

20. The method of claim 17 , wherein depositing the etch-resist material layer comprises depositing the etch-resist material layer using at least one of inkjet printing, slot die coating, spin coating, or laminatio

Assignees

• Kateeva Inc

Inventors

• Shpaisman Nava
• Frenkel Moshe

Classifications

• H05K2203/1184

  Underetching, e.g. etching of substrate under conductors or etching of conductor under dielectrics; Means for allowing or controlling underetching · CPC title

• H05K2203/1163

  Chemical reaction, e.g. heating solder by exothermic reaction · CPC title

• H05K2203/0392

  Pretreatment of metal, e.g. before finish plating, etching · CPC title

• H05K3/282

  for inhibiting the corrosion of the circuit, e.g. for preserving the solderability · CPC title

• H05K3/068

  Apparatus for etching printed circuits · CPC title