Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element

Patent metadata

Field	Value
Publication number	US-11004902-B2
Application number	US-201716306033-A
Country	US
Kind code	B2
Filing date	Apr 24, 2017
Priority date	Jun 14, 2016
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

First claim

The invention claimed is:

1. A circuit element, comprising:
paired inert electrodes; and
a switch layer between the paired inert electrodes, wherein
the switch layer is configured to function as a first selection element and a first storage element as a single layer,
the switch layer comprises a differential negative resistance region in a current-voltage characteristic, and

the circuit element is configured to change from an on-state to an off-state based on at least one of a voltage pulse or a current pulse applied to the circuit element, wherein
the off-state includes a first off-state and a second off-state based on the at least one of the voltage pulse or the current pulse applied to the circuit element in the on-state.

2. The circuit element according to claim 1 , wherein the switch layer further comprises at least one kind of chalcogen element selected from the group consisting of Te, Se, and S.

3. The circuit element according to claim 2 , wherein
the switch layer further comprises at least one kind of first additional element selected from the group consisting of B, Al, Ga, C, Ge, and Si.

4. The circuit element according to claim 3 , wherein
the switch layer further comprises at least one kind of second additional element selected from the group consisting of O and N.

5. The circuit element according to claim 1 , wherein
the paired inert electrodes comprises at least one kind element of selected from the group consisting of Ti, W, Ta, and Si.

6. The circuit element according to claim 1 , wherein
the switch layer has a film thickness of more than or equal to 5 nm and less than or equal to 100 nm.

7. The circuit element according to claim 1 , wherein
the switch layer is not connected to a second selection element or a second storage element directly or via the paired inert electrodes.

8. The circuit element according to claim 1 , wherein
an electrode other than the switch layer is not provided between the paired inert electrodes.

9. The circuit element according to claim 1 , further comprising:
a bit line and a word line configured to sandwich the paired inert electrodes and the switch layer, wherein the bit line intersects the word line.

10. The circuit element according to claim 1 , wherein
the switch layer of a respective paired inert electrode comprises at least one of materials, shapes, or interface states that are different to each other.

11. The circuit element according to claim 10 , wherein
the switch layer of the respective paired inert electrode comprises a plurality of contact resistances that are different to each other.

12. A storage device, comprising:
a plurality of circuit elements arranged in a matrix, wherein each of the plurality of circuit elements includes:
paired inert electrodes; and
a switch layer of a plurality of switch layers between the paired inert electrodes, wherein
the switch layer is configured to function as a selection element and a storage element as a single layer,
the switch layer comprises a differential negative resistance region in a current-voltage characteristic, and

a circuit element of the plurality of circuit elements is configured to change from an on-state to an off-state based on at least one of a voltage pulse or a current pulse applied to the circuit element, wherein
the off-state includes a first off-state and a second off-state based on the at least one of the voltage pulse or the current pulse applied to the circuit element in the on-state.

13. The storage device according to claim 12 , wherein
the plurality of switch layers are in continuous without spaced apart from each other among the plurality of circuit elements.

14. Electronic equipment, comprising:
a circuit element that includes:
paired inert electrodes; and
a switch layer between the paired inert electrodes, wherein
the switch layer is configured to function as a selection element and a storage element as a single layer,
the switch layer comprises a differential negative resistance region in a current-voltage characteristic, and

the circuit element is configured to change from an on-state to an off-state based on at least one of a voltage pulse or a current pulse applied to the circuit element, wherein
the off-state includes a first off-state and a second off-state based on the at least one of the voltage pulse or the current pulse applied to the circuit element in the on-state.

15. A method, comprising:
measuring at least one of a leak current in a circuit element in an off-state or a threshold voltage that changes the circuit element to an on-state; and
determining one of a plurality of states of a resistance value of the circuit element in the off-state based on the at least one of the measured leak current or the measured threshold voltage to read information from the circuit element, wherein
the plurality of states of the resistance value of the circuit element in the off-state are two states including a first off-state and a second off-state based on at least one of a voltage pulse or a current pulse applied to the circuit element in the on-state, and
the circuit element includes:
paired inert electrodes and
a switch layer between the paired inert electrodes, wherein
the switch layer is configured to function as a selection element and a storage element as a single layer, and
the switch layer comprises a differential negative resistance region in a current-voltage characteristic.

16. The method according to claim 15 , comprising:
controlling the plurality of states of the resistance value of the circuit element in the off-state based on a polarity of a voltage applied to the circuit element in the on-state, wherein the resistance value of the circuit element in the second off-state is higher than the resistance value of the circuit element in the first off-state; and
determining whether the resistance value of the circuit element in the off-state is in the first off-state or the second off-state to read the information from the circuit element, based on a current value, wherein
the current value is the current pulse that flows based on an application of the voltage to the circuit element that is higher than a first threshold voltage and lower than a second threshold voltage,
the first threshold voltage causes the circuit element to transition from the first off-state to the on-state,
the second threshold voltage causes the circuit element to the transition from the second off-state to the on-state, and
the voltage is applied at the polarity same as the polarity of a second voltage that performs control such that the resistance value of the circuit element in the off-state enters the first off-state.

17. The method according to claim 15 , further comprising:
rewriting the information read from the circuit element into the circuit element after reading the information from the circuit element.

Assignees

• Sony Corp

Inventors

• Ikarashi Minoru
• Nonoguchi seiji
• Sone Takeyuki
• Sei Hiroaki
• Ohba Kazuhiro
• Okuno Jun

Classifications

• G11C13/0069 Primary

  Writing or programming circuits or methods · CPC title

• G11C2213/15

  Current-voltage curve · CPC title

• G11C2213/52

  Structure characterized by the electrode material, shape, etc. · CPC title

• G11C13/004

  Reading or sensing circuits or methods · CPC title

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title