Gate contact structure over active gate and method to fabricate same

Patent metadata

Field	Value
Publication number	US-11004739-B2
Application number	US-201816219795-A
Country	US
Kind code	B2
Filing date	Dec 13, 2018
Priority date	Sep 19, 2012
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.

First claim

What is claimed is:

1. An integrated circuit structure, comprising:
a fin comprising silicon;
a first gate structure over the fin, wherein the first gate structure comprises a gate cap dielectric layer on a gate electrode, the gate cap dielectric layer comprising a first dielectric material comprising silicon and nitrogen, and the gate cap dielectric layer of the first gate structure having an uppermost surface;
a second gate structure over the fin, wherein the second gate structure comprises a gate cap dielectric layer comprising the first dielectric material, the gate cap dielectric layer of the second gate structure having an uppermost surface;
a trench contact structure over the fin, wherein the trench contact structure is between the first gate structure and the second gate structure, wherein the trench contact structure comprises a trench cap dielectric layer on a top of a trench contact, the trench cap dielectric layer comprising a second dielectric material, wherein the second dielectric material is different than the first dielectric material, the second dielectric material comprising silicon and carbon, wherein the trench cap dielectric layer has an uppermost surface, and wherein the uppermost surface of the trench cap dielectric layer is co-planar with the uppermost surface of the gate cap dielectric layer of the first gate structure and co-planar with the uppermost surface of the gate cap dielectric layer of the second gate structure; and
a gate contact via in an opening of the gate cap dielectric layer of the first gate structure, the gate contact via on a portion of the gate electrode of the first gate structure, wherein the portion of the gate electrode of the first gate structure is over the fin, wherein the gate contact via is further on a portion of the trench cap dielectric layer of the trench contact structure, and wherein the gate contact via comprises cobalt.

2. The integrated circuit structure of claim 1 , further comprising:
a first dielectric spacer between the first gate structure and the trench contact structure; and
a second dielectric spacer between the second gate structure and the trench contact structure.

3. The integrated circuit structure of claim 2 , wherein the first dielectric spacer is further between the gate cap dielectric layer of the first gate structure and the trench cap dielectric layer, and wherein the second dielectric spacer is further between the gate cap dielectric layer of the second gate structure and the trench cap dielectric layer.

4. An integrated circuit structure, comprising:
a fin comprising silicon;
a first gate structure over the fin, wherein the first gate structure comprises a gate cap dielectric layer on a gate electrode, the gate cap dielectric layer comprising a first dielectric material comprising silicon and carbon, and the gate cap dielectric layer of the first gate structure having an uppermost surface;
a second gate structure over the fin, wherein the second gate structure comprises a gate cap dielectric layer comprising the first dielectric material, the gate cap dielectric layer of the second gate structure having an uppermost surface;
a trench contact structure over the fin, wherein the trench contact structure is between the first gate structure and the second gate structure, wherein the trench contact structure comprises a trench cap dielectric layer on a top of a trench contact, the trench cap dielectric layer comprising a second dielectric material, wherein the second dielectric material is different than the first dielectric material, the second dielectric material comprising silicon and nitrogen, wherein the trench cap dielectric layer has an uppermost surface, and wherein the uppermost surface of the trench cap dielectric layer is co-planar with the uppermost surface of the gate cap dielectric layer of the first gate structure and co-planar with the uppermost surface of the gate cap dielectric layer of the second gate structure; and
a gate contact via in an opening of the gate cap dielectric layer of the first gate structure, the gate contact via on a portion of the gate electrode of the first gate structure, wherein the portion of the gate electrode of the first gate structure is over the fin, wherein the gate contact via is further on a portion of the trench cap dielectric layer of the trench contact structure, and wherein the gate contact via comprises cobalt.

5. The integrated circuit structure of claim 4 , further comprising:
a first dielectric spacer between the first gate structure and the trench contact structure; and
a second dielectric spacer between the second gate structure and the trench contact structure.

6. The integrated circuit structure of claim 5 , wherein the first dielectric spacer is further between the gate cap dielectric layer of the first gate structure and the trench cap dielectric layer, and wherein the second dielectric spacer is further between the gate cap dielectric layer of the second gate structure and the trench cap dielectric layer.

7. An integrated circuit structure, comprising:
a fin comprising silicon;
a first gate structure over the fin, wherein the first gate structure comprises a gate cap dielectric layer on a gate electrode, the gate cap dielectric layer comprising a first dielectric material, and the gate cap dielectric layer of the first gate structure having an uppermost surface;
a second gate structure over the fin, wherein the second gate structure comprises a gate cap dielectric layer comprising the first dielectric material, the gate cap dielectric layer of the second gate structure having an uppermost surface;
a trench contact structure over the fin, wherein the trench contact structure is between the first gate structure and the second gate structure, wherein the trench contact structure comprises a trench cap dielectric layer on a top of a trench contact, the trench cap dielectric layer comprising a second dielectric material, wherein the second dielectric material is different than the first dielectric material, wherein the trench cap dielectric layer has an uppermost surface, and wherein the uppermost surface of the trench cap dielectric layer is co-planar with the uppermost surface of the gate cap dielectric layer of the first gate structure and co-planar with the uppermost surface of the gate cap dielectric layer of the second gate structure; and
a gate contact via in an opening of the gate cap dielectric layer of the first gate structure, the gate contact via on a portion of the gate electrode of the first gate structure, wherein the portion of the gate electrode of the first gate structure is over the fin, wherein the gate contact via is further on a portion of the trench cap dielectric layer of the trench contact structure.

8. The integrated circuit structure of claim 7 , wherein the first dielectric material comprises silicon and nitrogen.

9. The integrated circuit structure of claim 7 , wherein the second dielectric material comprises silicon and carbon.

10. The integrated circuit structure of claim 7 , wherein the gate contact via comprises cobalt.

11. The integrated circuit structure of claim 7 , further comprising:
a first dielectric spacer between the first gate structure and the trench contact structure; and
a second dielectric spacer between the second gate structure and the trench contact structure.

12. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a fin comprising silicon;
a first gate structure over the fin, wherein the first gate structure comprises a gate cap dielectric layer on a gate electrode, the gate cap

Assignees

• Intel Corp

Inventors

• Pethe Abhijit Jayant
• Ghani Tahir
• Bohr Mark
• Webb Clair
• Gomez Harry
• Cappellani Annalisa

Classifications

• H10W20/0693

  by forming self-aligned vias · CPC title

• H10P50/283

  by chemical means · CPC title

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title