Monitoring dry-etching of polymer layer for transferring semiconductor devices

Patent metadata

Field	Value
Publication number	US-10998215-B2
Application number	US-201816020775-A
Country	US
Kind code	B2
Filing date	Jun 27, 2018
Priority date	Jun 27, 2018
Publication date	May 4, 2021
Grant date	May 4, 2021

Abstract

Embodiments relate to placing light emitting diodes from a carrier substrate to a target substrate. At least one LED is embedded in a polymer layer on a substrate. The polymer layer is etched between the at least one LED and the substrate. A thickness of the polymer layer is monitored during etching of the polymer layer. The etching of the polymer layer is terminated responsive to determining that the thickness of the polymer layer is in a target range or a target value. A pick-up-tool (PUT) is brought into contact with at least one surface of the at least one LED facing away from the substrate responsive to dry-etching the polymer layer, and the PUT is lifted with the at least one LED attached to the PUT.

First claim

What is claimed is:

1. A method, comprising:
etching a polymer layer between a substrate and at least one light emitting diode (LED) of a plurality of LEDs, the at least one LED embedded in the polymer layer;
monitoring a thickness of the polymer layer during etching of the polymer layer; and
terminating etching of the polymer layer responsive to determining that the thickness of the polymer layer is in a target range or substantially at a target value.

2. The method of claim 1 , further comprising:
bringing a pick-up-tool (PUT) into contact with at least one surface of the at least one LED facing away from the substrate responsive to terminating of the etching; and
lifting the PUT with the at least one LED attached to the PUT.

3. The method of claim 1 , wherein etching the polymer layer comprises dry-etching with oxygen plasma.

4. The method of claim 1 , wherein etching the polymer layer comprises dry-etching with air plasma.

5. The method of claim 1 , wherein etching the polymer layer comprises isotropic etching.

6. The method of claim 1 , monitoring the thickness of the polymer layer comprises:
capturing an image of the at least one LED and at least a portion of the polymer layer using a microscope.

7. The method of claim 6 , wherein the microscope is located outside of a chamber in which the etching of the polymer layer is performed.

8. The method of claim 6 , further comprising illuminating the at least one LED and the at least the portion of the polymer layer using light generated by a light source.

9. The method of claim 8 , wherein light generated by the light source travels in a direction from the polymer layer to the substrate.

10. The method of claim 8 , wherein light generated by the light source travels in a direction from the substrate to the polymer layer.

11. The method of claim 6 , wherein the microscope comprises a Scanning Electron Microscope (SEM).

12. The method of claim 1 , wherein the target range or the target value of the thickness is greater than a thickness at which delamination of the at least one LED occurs.

13. The method of claim 1 , wherein the target range or the target value defines a thickness profile, the thickness profile of the polymer layer forming a ridge structure.

14. The method of claim 1 , wherein the at least one LED is a micro LED.

15. The method of claim 1 , wherein:
a plurality of LEDs are embedded in the polymer layer;
etching further comprises etching the polymer layer between the plurality of LEDs; and
monitoring further comprises monitoring the thickness of the polymer layer between LEDs in the plurality of LEDs.

16. The method of claim 15 , further comprising:
determining an average thickness of the polymer layer for the plurality of LEDs; and
terminating etching of the polymer layer responsive to determining that the average thickness is in a target range or substantially at a target value.

17. A non-transitory computer-readable storage medium storing processor executable instructions, the instructions storing instructions, when executed cause a processor to:
etch a polymer layer between at least one LED and a substrate, the at least one LED embedded in the polymer layer;
monitor a thickness of the polymer layer during etching of the polymer layer; and
terminate etching of the polymer layer responsive to determining that the thickness of the polymer layer is in a target range or substantially at a target value.

Assignees

• Facebook Tech Llc

Inventors

• Brodoceanu Daniel

Classifications

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10W90/00

  Package configurations · CPC title

• H10P72/53 Primary

  using optical controlling means · CPC title

• H10P72/7428

  used to support diced chips prior to mounting · CPC title