Monolithic multiple solar cells

Patent metadata

Field	Value
Publication number	US-9502598-B2
Application number	US-201614988285-A
Country	US
Kind code	B2
Filing date	Jan 5, 2016
Priority date	Jan 4, 2005
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

First claim

What is claimed is:

1. A monolithic multiple solar cell comprising essentially of elements of the 3rd and 5th main groups of the periodic table, wherein the multiple solar cell comprises at least three partial cells,
wherein one of the partial cells of the multiple solar cell is from the GaInNAs group, and a semiconductor mirror is arranged between two partial cells, the semiconductor mirror being integrated below the GaInNAs partial cell,
wherein the semiconductor mirror has multiple layers with different refraction indices and/or material compositions and/or thicknesses,
wherein the thickness of the layers of the semiconductor mirror is 10 nm≦d≦150 nm,
wherein the semiconductor mirror comprises n layers with 10≦n≦50, a half-width value of the semiconductor mirror being 50 nm≦HWB≦300 nm, and
wherein the semiconductor mirror has a higher reflection degree in one part of a spectral absorption range of the partial cell or partial cells arranged above the semiconductor mirror and has a higher transmission degree in the spectral absorption range of the partial cell or partial cells arranged below the semiconductor mirror.

2. The monolithic multiple solar cell according to claim 1 , wherein the layers of the semiconductor mirror are made of compound semiconductors of the 3rd and 5th main groups of the periodic table and are doped with Si, Te, Zn, C, Mg and/or Se.

3. The monolithic multiple solar cell according to claim 1 , wherein the layer of the semiconductor mirror formed directly below the partial cell located above it constitutes a rear side field of the partial cell, which is made of AlGaInP.

4. The monolithic multiple solar cell according to claim 1 , wherein the layer or layers of the semiconductor mirror that are arranged directly under the subsequent partial cell are lattice-matched to the partial cell.

5. The monolithic multiple solar cell according to claim 1 , wherein the semiconductor mirror has materials with a band gap energy that is equal to or greater than that of the partial cell located above it.

6. The monolithic multiple solar cell according to claim 1 , wherein the layers of the semiconductor mirror are made of compound semiconductors in the form of AlGaInAs material and/or AlGaInP material, wherein, in particular, the AlGaInAs material includes GaAs, InAs, AlAs, GaInAs, AlGaAs, AlInAs and/or the AlGaInP material includes GaP, InP, AlP, GaInP and/or AlInP.

7. The monolithic multiple solar cell according to claim 1 , wherein the semiconductor mirror is made of at least three layers with different indices of diffraction and/or of at least three layers with different compositions and/or with different thicknesses.

8. The monolithic multiple solar cell according to claim 1 , wherein the semiconductor mirror has a total thickness D with 500 nm≦D≦4000 nm, and wherein the semiconductor mirror comprises n layers with 15≦n≦35.

9. The monolithic multiple solar cell according to claim 8 , wherein the semiconductor mirror has a total thickness D with 750 nm≦D≦2500 nm.

10. The monolithic multiple solar cell according to claim 1 , wherein the quadruple solar cell is an AlGaInP/GaInAs/GaInNAs/Ge multiple solar cell.

11. The monolithic multiple solar cell according to claim 10 , wherein multiple semiconductor mirrors are integrated.

12. The monolithic multiple solar cell according to claim 1 , wherein a sextuple solar cell is an AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge multiple solar cell.

13. The monolithic multiple solar cell according to claim 12 , wherein multiple semiconductor mirrors are integrated.

14. The monolithic multiple solar cell according to claim 1 , wherein the reflection degree R of the semiconductor mirror for radiation in one part of the spectral absorption range of the partial cell or partial cells arranged above the semiconductor mirror is 0.7≦R≦1.

15. The monolithic multiple solar cell according to claim 1 , wherein the semiconductor mirror transmission degree T of the semiconductor mirror for the radiation in the spectral absorption range of the partial cell or partial cells arranged below the semiconductor mirror is 0.8≦T≦1.

16. The monolithic multiple solar cell according to claim 1 , wherein the multiple solar cell is constructed on a Ge substrate.

17. The monolithic multiple solar cell according to claim 1 , wherein the semiconductor mirror is 50 nm≦HWB≦150 nm.

Assignees

• Azur Space Solar Power Gmbh

Inventors

• Meusel Matthias
• Strobl Gerhard
• Dimroth Frank
• Bett Andreas

Classifications

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• Y02E10/52

  PV systems with concentrators · CPC title

• H01L31/03046

  Electricity · mapped topic

• H01L31/0735

  Electricity · mapped topic

• H01L31/0725 Primary

  Electricity · mapped topic