Field-to-field corrections using overlay targets

Patent metadata

Field	Value
Publication number	US-10990022-B2
Application number	US-201916678840-A
Country	US
Kind code	B2
Filing date	Nov 8, 2019
Priority date	Dec 20, 2018
Publication date	Apr 27, 2021
Grant date	Apr 27, 2021

Abstract

A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.

First claim

What is claimed:

1. A metrology system comprising:
a controller communicatively coupled to a metrology tool, the controller including one or more processors configured to execute program instructions causing the one or more processors to:
receive a metrology target design, wherein the metrology target design includes at least a first feature formed by exposing a first exposure field on a first layer of a sample with a lithography tool, wherein the metrology target design further includes at least a second feature formed by exposing a second exposure field on a second layer of the sample different than the first layer with the lithography tool, wherein the second exposure field partially overlaps the first exposure field, wherein the second exposure field overlaps the first exposure field at a location of a metrology target on the sample;
receive metrology data associated with the metrology target fabricated according to the metrology target design;
determine one or more fabrication errors during fabrication of the metrology target based on the metrology data; and
generate one or more correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.

2. The metrology system of claim 1 , wherein the one or more fabrication errors include errors associated with the lithography tool.

3. The metrology system of claim 2 , wherein the one or more fabrication errors include at least one of field scaling errors, field-to-field alignment errors, sample-to-mask alignment errors, or overlay errors.

4. The metrology system of claim 1 , wherein the one or more fabrication errors include errors associated with the sample.

5. The metrology system of claim 4 , wherein the one or more fabrication errors include at least one of field sample stresses or sample imperfections.

6. The metrology system of claim 1 , wherein the metrology tool comprises:
an image-based metrology tool.

7. The metrology system of claim 6 , wherein the metrology target design comprises:
a design of at least one of an advanced imaging metrology (AIM) target, an AIM in-die target, a multilayer AIM in-die target, a box-in-box target, or a “Ruller” target.

8. The metrology system of claim 1 , wherein the metrology tool comprises:
a scatterometry-based metrology tool.

9. The metrology system of claim 8 , wherein the metrology target comprises:
a scatterometry metrology target.

10. The metrology system of claim 1 , wherein the metrology target is symmetric to rotation around at least one of 90 degrees or 180 degrees.

11. The metrology system of claim 1 , wherein the metrology target is reflection symmetric about at least one axis.

12. The metrology system of claim 1 , wherein the metrology target design further includes at least a third feature formed by exposing a third exposure field on the first layer of the sample with the lithography tool, wherein the third exposure field partially overlaps the first exposure field on the first layer of the sample and fully overlaps the second exposure field on the second layer of the sample, wherein the metrology target design further includes at least a fourth feature formed by exposing a fourth exposure field on the second layer of the sample with the lithography tool, wherein the fourth exposure field partially overlaps the first exposure field on the first layer of the sample and fully overlaps the second exposure field on the second layer of the sample.

13. The metrology system of claim 12 , wherein the one or more fabrication errors include overlay errors based on at least one of a position of the first feature with respect to the third feature or a position of the second feature with respect to the fourth feature, wherein the one or more fabrication errors further include field-to-field errors based on at least one of a position of the first feature with respect to the fourth feature or a position of the second feature with respect to the third feature.

Assignees

• Kla Corp

Inventors

• Leshinsky-Altshuller Enna
• Tarshish-Shapir Inna
• Ghinovker Mark
• Shaphirov Diana
• Ben Dov Guy
• Volkovich Roie
• Steely Chris

Classifications

• G03F7/706837 Primary

  Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis · CPC title

• G06T7/0004

  Industrial image inspection · CPC title

• G01N21/95607 Primary

  using a comparative method · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title