Semiconductor substrate manufacturing method, semiconductor device, and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10988647-B2
Application number	US-201816606789-A
Country	US
Kind code	B2
Filing date	Apr 19, 2018
Priority date	Apr 21, 2017
Publication date	Apr 27, 2021
Grant date	Apr 27, 2021

Abstract

The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor substrate, comprising:
forming a polyimide layer on a support material;
bonding the support material and a circuit-formed face of a semiconductor wafer with the polyimide layer being interposed therebetween;
grinding a non-circuit-formed face of the semiconductor wafer to which the support material is bonded;
releasing the support material from the polyimide layer; and
releasing the polyimide layer from the semiconductor wafer, wherein
a polyimide for use in the polyimide layer has a glass transition temperature of 210° C. or less and is dissolvable in a solvent; wherein
the polyimide comprises a polycondensation unit of a tetracarboxylic dianhydride (α) and a diamine (β);
the tetracarboxylic dianhydride (α) comprises an aromatic tetracarboxylic dianhydride (α1) having a benzophenone backbone, represented by the following formula (1), or the diamine (β) comprises an aromatic diamine (β1) having a benzophenone backbone, represented by the following formula (2),

a total amount of the aromatic tetracarboxylic dianhydride (α1) and the aromatic diamine (β1) is 5 to 49 mol % based on a total amount of the tetracarboxylic dianhydride (α) and the diamine (β);
the diamine (β) comprises an aliphatic diamine (β5) represented by the following formula (3) or (4),

wherein in formula (3), R 1 is an aliphatic chain having a main chain containing any one or more atoms of C, N, and O, a total number of atoms constituting the main chain is 7 to 500, the aliphatic chain further has a side chain containing any one or more atoms of C, N, H, and O, and a total number of atoms constituting the side chain is 10 or less,
H 2 N—R 2 —NH 2   (4)

wherein in formula (4), R 2 is an aliphatic chain having a main chain containing any one or more atoms of C, N, and O, a total number of atoms constituting the main chain is 5 to 500, the aliphatic chain further has a side chain containing any one or more atoms of C, N, H, and O, and a total number of atoms constituting the side chain is 10 or less; and
the polyimide has an amine equivalent of 4,000 to 20,000.

2. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the total amount of the aromatic tetracarboxylic dianhydride (α1) and the aromatic diamine (β1) is 5 to 30 mol % based on the total amount of the tetracarboxylic dianhydride (α) and the diamine (β),
a total amount of a tetracarboxylic dianhydride and a diamine each not having any aliphatic chain having 3 or more carbon atoms in a main chain is 95 mol % or more based on the total amount of the tetracarboxylic dianhydride (α) and the diamine (β),
the tetracarboxylic dianhydride (α) comprises an aromatic tetracarboxylic dianhydride (α2) not having a biphenyl backbone but having a diphenyl ether backbone, or the diamine (β) comprises an aromatic diamine (β2) not having a biphenyl backbone but having a diphenyl ether backbone,
a total amount of the aromatic tetracarboxylic dianhydride (α2) and the aromatic diamine (β2) is 40 mol % or more and 95 mol % or less based on the total amount of the tetracarboxylic dianhydride (α) and the diamine (β), and a total amount of an aromatic tetracarboxylic dianhydride (α3) not having a biphenyl backbone but having a diphenyl ether backbone and having three or more aromatic rings, and an aromatic diamine (β3) not having a biphenyl backbone but having a diphenyl ether backbone and having three or more aromatic rings is 20 mol % or more based on the total amount of the tetracarboxylic dianhydride (α) and the diamine (β),
the tetracarboxylic dianhydride (α) comprises an aromatic tetracarboxylic dianhydride (α4) having a biphenyl backbone, or the diamine (β) comprises an aromatic diamine (β4) having a biphenyl backbone,
a total amount of the aromatic tetracarboxylic dianhydride (α4) and the aromatic diamine (β4) is 0 mol % or more and less than 45 mol % based on the total amount of the tetracarboxylic dianhydride (α) and the diamine (β), and
the polyimide has a viscosity average molecular weight η of 0.6 or more and 1.60 or less.

3. The method for manufacturing a semiconductor substrate according to claim 1 , further comprising
processing a non-circuit-formed face of the semiconductor wafer at a temperature of 180° C. or more, after the wafer grinding and before the support material releasing.

4. The method for manufacturing a semiconductor substrate according to claim 1 , further comprising
forming an unevenness absorbing layer on the polyimide layer after the polyimide layer formation and before the wafer bonding, wherein
the wafer bonding comprises bonding the support material and the circuit-formed face of the semiconductor wafer with the polyimide layer and the unevenness absorbing layer being interposed therebetween, and
the polyimide layer releasing comprises releasing the unevenness absorbing layer and the polyimide layer from the semiconductor wafer.

5. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the support material releasing comprises irradiating an interface between the support material and the polyimide layer with laser light.

6. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the support material releasing comprises dissolving at least a part of the polyimide layer with a solvent.

7. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the polyimide layer formation comprises coating with a varnish comprising a solvent and the polyimide, and drying the varnish.

8. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the polyimide layer formation comprises bonding a polyimide sheet comprising the polyimide, to the support material.

9. A method for manufacturing a semiconductor apparatus, comprising:
forming a polyimide layer on a support material;
forming a rewiring layer on the support material with the polyimide layer being interposed therebetween;
disposing a semiconductor chip on the rewiring layer, and joining the rewiring layer and the semiconductor chip so as to electrically conduct the rewiring layer and the semiconductor chip;
sealing the semiconductor chip joined to the rewiring layer, with a sealing material; and
releasing the support material from the polyimide layer, wherein
a polyimide for use in the polyimide layer has a glass transition temperature of 210° C. or less and is dissolvable in a solvent; wherein
the polyimide comprises a polycondensation unit of a tetracarboxylic dianhydride (α) and a diamine (β);
the tetracarboxylic dianhydride (α) comprises an aromatic tetracarboxylic dianhydride (α1) having a benzophenone backbone, represented by the following formula (1), or the diamine (β) comprises an aromatic diamine (β1) having a benzophenone backbone, represented by the following formula (2),

a total amount of the aromatic tetracarboxylic dianhydride (α1) and the aromatic diamine (β1) is 5 to 49 mol % based on a total amount of the tetracarboxylic dianhydride (α) and the diamine (β);
the diamine (β) comprises an aliphatic diamine (β5) represented by the following formula (3) or (4),

wherein in formula (3), R 1 is an aliphatic chain having a

Assignees

• Mitsui Chemicals Inc

Inventors

• Kamada Jun
• Haruta Kaichiro
• Unezaki Takashi
• Imagawa Kiyomi
• Fujii Kenichi
• Kayaba Yasuhisa
• Kohmura Kazuo

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10W74/01 Primary

  Manufacture or treatment · CPC title

• H10W72/07207

  Temporary substrates, e.g. removable substrates · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W42/121

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title