Security authentication method and system, and integrated circuit
US-2019260587-A1 · Aug 22, 2019 · US
US10985128B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10985128-B2 |
| Application number | US-201716464854-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 20, 2017 |
| Priority date | Dec 1, 2016 |
| Publication date | Apr 20, 2021 |
| Grant date | Apr 20, 2021 |
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An anisotropic conductive film has a structure in which high hardness conductive particles having a 20% compression elastic modulus of 8000 to 28000 N/mm 2 and low hardness conductive particles having a lower 20% compression elastic modulus than that of the high hardness conductive particles are dispersed as conductive particles in an insulating resin layer. The number density of all the conductive particles is 6000 particles/mm 2 or more, and the number density of the low hardness conductive particles is 10% or more of that of all the conductive particles.
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The invention claimed is: 1. An anisotropic conductive film comprising an insulating resin layer, high hardness conductive particles having a 20% compression elastic modulus of 8000 to 28000 N/mm 2 , and low hardness conductive particles having a lower 20% compression elastic modulus than that of the high hardness conductive particles, wherein both the high hardness conductive particles and the low hardness conductive particles are dispersed as conductive particles in the insulating resin layer, a number density of all the conductive particles is 6000 particles/mm 2 or more, and a number density of the low hardness conductive particles is 10% or more of that of all the conductive particles. 2. The anisotropic conductive film according to claim 1 , wherein the 20% compression elastic modulus of the low hardness conductive particles is 10% or more and 70% or less of the 20% compression elastic modulus of the high hardness conductive particles. 3. The anisotropic conductive film according to claim 1 , wherein the number density of the low hardness conductive particles is 20% or more and 80% or less of that of all the conductive particles. 4. The anisotropic conductive film according to claim 1 , wherein an average particle diameter of all the conductive particles is less than 10 μm, and the number density of all the conductive particles is 6000 particles/mm 2 or more and 42000 particles/mm 2 or less. 5. The anisotropic conductive film according to claim 1 , wherein an average particle diameter of all the conductive particles is 10 μm or more, and the number density of all the conductive particles is 20 particles/mm 2 or more and 2000 particles/mm 2 or less. 6. The anisotropic conductive film according to claim 1 , wherein the conductive particles including the high hardness conductive particles and the low hardness conductive particles are regularly disposed in a plan view, and positions thereof in a thickness direction of the film are uniform. 7. The anisotropic conductive film according to claim 6 , wherein a proportion of number of the conductive particles including the high hardness conductive particles and the low hardness conductive particles that are present without being in contact with each other is 95% or more. 8. The anisotropic conductive film according to claim 1 , wherein the high hardness conductive particles and the low hardness conductive particles are dispersed at random. 9. The anisotropic conductive film according to claim 1 , wherein an inclination or an undulation is formed in a surface of the insulating resin layer around the high hardness conductive particles and the low hardness conductive particles with respect to a tangential plane of the insulating resin layer in a center portion between adjacent conductive particles. 10. The anisotropic conductive film according to claim 9 , wherein the surface of the insulating resin layer around the high hardness conductive particles and the low hardness conductive particles in the inclination is lacked with respect to the tangential plane, and an amount of the resin of the insulating resin layer right above the high hardness conductive particles and the low hardness conductive particles in the undulation is smaller than that when the surface of the insulating resin layer right above the high hardness conductive particles and the low hardness conductive particles is flush with the tangential plane. 11. A connection structure wherein a first electronic component and a second electronic component are anisotropically conductively connected via the anisotropic conductive film according to claim 1 . 12. The connection structure according to claim 11 , wherein a terminal is formed on a PET substrate in the first electronic component. 13. A method for producing the connection structure according to claim 11 , comprising the step of disposing the anisotropic conductive film in between the first electronic component and the second electronic component to anisotropically conductively connect the first electronic component and the second electronic component. 14. The anisotropic conductive film according to claim 1 , further comprising a second insulating resin layer, the second insulating resin layer being provided on a first surface of the insulating resin layer. 15. The anisotropic conductive film according to claim 14 , further comprising a third insulating resin layer, the third insulating resin layer being provided on a second surface of the insulating resin layer, wherein the second surface of the insulating resin layer opposes the first surface of the insulating resin layer. 16. The anisotropic conductive film according to claim 1 , wherein the high hardness conductive particles and the low hardness conductive particles are embedded in the insulating resin layer without being exposed therefrom. 17. The anisotropic conductive film according to claim 1 , wherein the high hardness conductive particles and the low hardness conductive particles do not overlap each other in a film thickness direction.
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