Silicon-based modulator with different transition zone thicknesses

Patent metadata

Field	Value
Publication number	US-10983369-B2
Application number	US-201916666830-A
Country	US
Kind code	B2
Filing date	Oct 29, 2019
Priority date	Jan 26, 2018
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

A silicon modulator where the doping profile varies along the lateral and/or longitudinal position in the transition zones to achieve improved performance in terms of either optical attenuation or contact access resistance or both. A silicon-based modulator includes a waveguide core that is a PN junction region; a first transition zone that is a P-side region adjacent to the waveguide core and a first electrode; and a second transition zone that is an N-side region adjacent to the waveguide core on an opposite side as the first transition region and a second electrode; wherein a thickness of each of the first transition zone and the second transition zone is variable in any of a lateral direction, a longitudinal direction, and both the lateral direction and the longitudinal direction, each of the lateral direction and the longitudinal direction are relative to the waveguide core.

First claim

What is claimed is:

1. A silicon-based modulator comprising:
a waveguide core that is a PN junction region;
a first transition zone that is a P-side region adjacent to the waveguide core and a first electrode; and
a second transition zone that is an N-side region adjacent to the waveguide core on an opposite side as the first transition region and a second electrode;
wherein a slab thickness of at least one of the first transition zone and the second transition zone is variable in any of a lateral direction, a longitudinal direction, and both the lateral direction and the longitudinal direction, each of the lateral direction and the longitudinal direction are relative to the waveguide core, and
wherein the slab thickness is varied in discrete levels defined by one or more steps at or near right angles.

2. The silicon-based modulator of claim 1 , wherein the slab thickness is variable to reduce a contact resistance of the silicon-based modulator.

3. The silicon-based modulator of claim 1 , wherein the thickness is varied in at least two discrete levels at or near the first electrode and the second electrode.

4. The silicon-based modulator of claim 1 , wherein the thickness is varied in at least three discrete levels at or near the first electrode and the second electrode.

5. The silicon-based modulator of claim 1 , wherein the slab thickness of each of the first transition zone and the second transition zone is set such that highly doped silicon is in regions of smaller slab thickness.

6. A silicon-based modulator comprising:
a waveguide core that is a PN junction region;
a first transition zone that is a P-side region adjacent to the waveguide core and a first electrode; and
a second transition zone that is an N-side region adjacent to the waveguide core on an opposite side as the first transition region and a second electrode;
wherein a slab thickness of at least one of the first transition zone and the second transition zone is variable in any of a lateral direction, a longitudinal direction, and both the lateral direction and the longitudinal direction, each of the lateral direction and the longitudinal direction are relative to the waveguide core, and
wherein the slab thickness is varied in at least three discrete levels at or near the first electrode and the second electrode.

7. The silicon-based modulator of claim 6 , wherein the slab thickness is variable to reduce a contact resistance of the silicon-based modulator.

8. The silicon-based modulator of claim 6 , wherein the discrete levels are defined by one or more steps at or near right angles.

9. The silicon-based modulator of claim 6 , wherein the slab thickness of each of the first transition zone and the second transition zone is set such that highly doped silicon is in regions of smaller slab thickness.

10. A silicon-based modulator comprising:
a waveguide core that is a PN junction region;
a first transition zone that is a P-side region adjacent to the waveguide core and a first electrode; and
a second transition zone that is an N-side region adjacent to the waveguide core on an opposite side as the first transition region and a second electrode;
wherein a slab thickness of at least one of the first transition zone and the second transition zone is variable in any of a lateral direction, a longitudinal direction, and both the lateral direction and the longitudinal direction, each of the lateral direction and the longitudinal direction are relative to the waveguide core, and
wherein the slab thickness is varied in curvy-line slopes.

11. The silicon-based modulator of claim 10 , wherein the slab thickness is variable to reduce a contact resistance of the silicon-based modulator.

12. The silicon-based modulator of claim 10 , wherein the slab thickness of each of the first transition zone and the second transition zone is set such that highly doped silicon is in regions of smaller slab thickness.

Assignees

• Ciena Corp

Inventors

• Delisle-Simard Alexandre
• Painchaud Yves

Classifications

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F2202/105

  single crystal Si · CPC title

• G02F2202/06

  dopant · CPC title

• G02F1/0156

  using free carrier absorption · CPC title