Methods for chemical mechanical polishing and forming interconnect structure
US-2024290629-A1 · Aug 29, 2024 · US
US10982114B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10982114-B2 |
| Application number | US-201816165640-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 19, 2018 |
| Priority date | Oct 25, 2017 |
| Publication date | Apr 20, 2021 |
| Grant date | Apr 20, 2021 |
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A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I − ), bromide (Br − ), fluoride (F − ), sulfate (SO 4 2− ), sulfide (S 2− ), sulfite (SO 3 2− ), chloride (Cl − ), silicate (SiO 4 4− ), phosphate (PO 4 3− ), nitrate (NO 3 − ), carbonate (CO 3 2− ), perchlorate (ClO 4 − ), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from M a F x , N b F x , M a N b F x , M a I x , N b I x , M a N b I x , M a Br x , N b Br x , M a N b Br x , M a (SO 4 ) x , N b (SO 4 ) x , MaN b (SO 4 ) x , M a S x , N b S x , M a N b S x , M a (SiO 4 ) x , N b (SiO 4 ) x , M a N b (SiO 4 ) x , M a (PO 4 ) x , N b (PO 4 ) x , M a N b (PO 4 ) x , M a (NO 3 ) x , N b (NO 3 ) x , M a N b (NO 3 ) x , M a (CO 3 ) x , N b (CO 3 ) x , M a N b (CO 3 ) x , or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.
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What is claimed is: 1. A composition comprising: a carrier comprising a liquid; an abrasive particulate contained in the carrier; an accelerant contained in the carrier, the accelerant being fully dissolved and including free fluoride (F − ) anions; and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from M a F x , N b F x , M a N b F x , or any combination thereof, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6, and wherein the buffer is different than the accelerant, wherein the accelerant has a solubility of at least 50 g/L and the buffer has a solubility of less than 10 g/L according to ASTM standard E1148. 2. The composition of claim 1 , wherein the carrier comprises water. 3. The composition of claim 1 , wherein the carrier is present in an amount of at least 45 wt % for a total weight of the composition. 4. The composition of claim 1 , wherein the abrasive particulate comprises a density of not greater than 4.5 g/cm 3 . 5. The composition of claim 1 , wherein the abrasive particulate comprises silica. 6. The composition of claim 1 , wherein the accelerant includes a compound selected from KF, NaF, RbF, NiF 2 , ZnF 2 , CoF 2 , or any combination thereof. 7. The composition claim 1 , wherein the buffer includes a compound selected from KBF 4 , NaBF 4 , NH 4 BF 4 , KPF 6 , NaPF 6 , CaF 2 , MgF2, Na 3 AlF 6 , FeF 3 , LiF, MnF 2 , AlF 3 , or any combination thereof. 8. The composition of claim 1 , wherein the accelerant is present in a concentration of at least 0.002 M to not greater than 1.0 M. 9. The composition of claim 1 , wherein the accelerant includes KF and the buffer includes KBF 4 . 10. The composition of claim 1 , wherein the abrasive particulate comprises silica, the accelerant comprises KF, and the buffer comprises KBF 4 . 11. The polishing slurry of claim 1 , wherein the polishing slurry is adapted to polish a zirconia-containing material with an average material removal rate (MMR) of at least 8.0 microns/hour according to a Zirconia Polishing Test. 12. The composition of claim 1 , wherein a pH of the composition is at least 9. 13. A composition comprising: a carrier comprising a liquid; an abrasive particulate contained in the carrier, wherein the abrasive particulate comprises silica; an accelerant contained in the carrier, the accelerant being fully dissolved and comprising free fluoride ions (F 1− ) present in an amount within a range of at least 0.002 M and not greater than 1.0 M and the accelerant has a solubility of at least 50 g/L; a buffer contained in the carrier, the buffer comprising M a N b F x , wherein M is a metal element, N is a non-metal element, and a, b, x are 1-6, and wherein the buffer has a solubility less than 10 g/L, wherein the buffer is contained in a saturated concentration in the carrier. 14. The composition of claim 13 , wherein the buffer includes KBF 4 . 15. The composition of claim 13 , wherein the accelerant includes a compound selected from KF, NaF, RbF, NiF 2 , ZnF 2 , CoF 2 , or any combination thereof. 16. The composition claim 13 , wherein the buffer includes a compound selected from KBF 4 , NaBF 4 , NH 4 BF 4 , KPF 6 , NaPF 6 , or any combination thereof. 17. The composition of claim 13 , wherein the accelerant comprises KF and the buffer comprises KBF 4 . 18. The composition of claim 13 , wherein a pH of the composition is at least 9.
Aqueous liquid suspensions · CPC title
Aqueous dispersions (C09G1/02 takes precedence) · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Polishing compositions (French polish C09F11/00; detergents C11D) · CPC title
Abrasive powders, suspensions and pastes for polishing · CPC title
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