Deposition process

Patent metadata

Field	Value
Publication number	US-10978307-B2
Application number	US-202016938049-A
Country	US
Kind code	B2
Filing date	Jul 24, 2020
Priority date	Aug 20, 2019
Publication date	Apr 13, 2021
Grant date	Apr 13, 2021

Abstract

A method of patterning a substrate includes receiving a substrate having microfabricated structures, including mandrels; executing a deposition process that deposits a first material on the mandrels, the deposition process including cyclically moving the substrate through a set of deposition modules. The substrate is moved through the set of deposition modules so that the first material is deposited at a first thickness at top portions of the mandrels and at a second thickness at bottom portions of mandrels, the first thickness being greater than the second thickness. The method includes executing a spacer deposition process that conformally deposits a second material on the substrate; executing a spacer open etch that removes depositions of the second material from over a top surface of the mandrels; removing the first material and the mandrels from the substrate, leaving sidewall spacers; and transferring a pattern defined by the sidewall spacers into an underlying layer.

First claim

What is claimed is:

1. A method of patterning a substrate, the method comprising:
receiving a substrate having microfabricated structures, including mandrels;
executing a deposition process that deposits a first material on the mandrels, the deposition process including cyclically moving the substrate through a set of deposition modules, the set of deposition modules including modules for component process of the deposition process, wherein the substrate is moved through the set of deposition modules so that the first material is deposited at a first thickness at top portions of the mandrels and at a second thickness at bottom portions of mandrels, the first thickness being greater than the second thickness; and
executing a spacer deposition process that conformally deposits a second material on the substrate.

2. The method of claim 1 , further comprising:
executing a spacer open etch that removes depositions of the second material from over a top surface of the mandrels;
removing the first material and the mandrels from the substrate, leaving sidewall spacers; and
transferring a pattern defined by the sidewall spacers into an underlying layer after removing the first material and the mandrels from the substrate.

3. The method of claim 1 , further comprising:
performing a selective etch process after executing the spacer open etch, wherein the selective etch process removes the first material and the mandrels from the substrate without damaging the sidewall spacers; and
wherein receiving the substrate comprises loading the substrate on a susceptor disposed within a processing chamber, and wherein the substrate is moved by rotating the susceptor at a rotational speed greater than 30 revolutions per minute.

4. A method of patterning a substrate, the method comprising:
receiving a substrate having microfabricated structures including mandrels;
executing an atomic layer deposition process that deposits a first material on the mandrels, the atomic layer deposition process including cyclically moving the substrate through a set of atomic layer deposition modules, the set of atomic layer deposition modules including modules for component process of the atomic layer deposition process, wherein the substrate is moved through the set of atomic layer deposition modules at a speed that results in the first material being deposited at a first thickness at top portions of the mandrels and at a second thickness a bottom portions of mandrels, the first thickness being greater than the second thickness;
executing a spacer deposition process that conformally deposits a second material on the first material;
executing a spacer open anisotropic etch to remove depositions of the second material from over top surfaces of the mandrels; and
removing the first material and the mandrels from the substrate, leaving sidewall spacers; and
transferring a pattern defined by the sidewall spacers into an underlying layer.

5. The method of claim 4 , wherein the first thickness is at least 10% thicker as compared to the second thickness, wherein the atomic layer deposition process is performed at a temperature between 100° C. and 350° C.

6. The method of claim 4 , further comprising controlling a sidewall angle of the sidewall spacers between 89° and 91° by controlling a difference between the first thickness and the second thickness.

7. The method of claim 4 ,
wherein receiving the substrate comprises loading the substrate on a susceptor to execute the atomic layer deposition process; and
wherein moving the substrate comprises rotating the susceptor at a rotational speed between 1 revolutions per minute and 240 revolutions per minute to control a difference between the first thickness and the second thickness.

8. The method of claim 4 , wherein the set of atomic layer deposition modules comprises a first reaction module, further comprising
diluting a first gaseous mixture comprising a first precursor gas by nitrogen gas or argon gas to control the difference between the first thickness and the second thickness.

9. A method for forming a device, the method comprising:
placing a substrate within a processing chamber, the substrate comprising a microfabricated structure comprising sidewalls and a top surface;
forming a first reaction zone within the processing chamber by flowing a first precursor gas and a first isolation zone within the processing chamber by flowing an inert gas through the first isolation zone; and
executing a cyclic deposition process to deposit a cap layer comprising a first material over the sidewalls and the top surface of the microfabricated structure by cyclically moving the substrate in a cyclic motion within the processing chamber through the first reaction zone and the first isolation zone, the depositing comprising
having a predetermined relationship between a thickness of the cap layer along the sidewalls of the microfabricated structure with the first precursor gas, the cyclic motion of the substrate, a partial pressure of the first precursor gas in the first reaction zone, and a thickness of the cap layer over the top surface of the microfabricated structure,
based on the predetermined relationship, selecting the first precursor gas, a target rate for the cyclic motion, a target partial pressure for the first precursor gas, a target deposition time for a target thickness of the cap layer over the top surface of the microfabricated structure, and
depositing the cap layer, for the selected target deposition time, at the selected target rate for the cyclic motion and the selected target partial pressure of the first precursor gas.

10. The method of claim 9 , wherein the sidewalls comprise top portions proximate the top surface and bottom portions separated from the top surface by the top portions, and wherein depositing the cap layer comprises depositing, during each pass of the cyclic motion, more of the first material on the top portions of the sidewalls than the bottom portions of the sidewalls.

11. The method of claim 9 , further comprising:
forming a second reaction zone within the processing chamber by flowing a second precursor gas through the second reaction zone;
forming a second isolation zone within the processing chamber by flowing the inert gas through the second isolation zone; and
wherein depositing the cap layer further comprises converting an intermediate layer formed by the first precursor gas in the first reaction zone to the first material in the second reaction zone by cyclically moving the substrate in a cyclic motion within the processing chamber through the second reaction zone and the second isolation zone.

12. The method of claim 11 , wherein the pressure in the first reaction zone is between 1.6 Torr and 2 Torr, wherein the first precursor gas in the first reaction zone is Tetrakis (DiMethylAmino) Titanium (TDMAT), wherein a source of the TDMAT is maintained at a temperature between 30° C. and 50° C.

13. The method of claim 9 , further comprising:
when the microfabricated structure is within the first reaction zone, depositing the first material over the sidewalls and the top surface of the microfabricated structure;
when the microfabricated structure is within the first isolation zone, purging the first precursor gas from the sidewalls and the top surface of the microfabricated structure; and
when the microfabricated structure is within the first isolation zone removing a byproduct formed during the depositing.

14. The method of claim 13 , wherein one cycle of the cyclic deposition process is performed with each pass of the cyclic motion of the substrate.

15. The

Assignees

• Tokyo Electron Ltd

Inventors

• O'Meara David
• Liu Eric Chih-Fang
• Farrell Richard
• Chae Soo Doo

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title