Quantum dots, a composition or composite including the same, and an electronic device including the same

US10975298B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10975298-B2
Application numberUS-202016817902-A
CountryUS
Kind codeB2
Filing dateMar 13, 2020
Priority dateJan 11, 2018
Publication dateApr 13, 2021
Grant dateApr 13, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Abs first −Abs valley )/Abs first =VD.

First claim

Opening claim text (preview).

What is claimed is: 1. A cadmium free quantum dot comprising a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not comprise cadmium, the quantum dot comprises indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, an ultraviolet-visible absorption spectrum of the quantum dot comprises a valley between about 450 nanometers and a first absorption peak wavelength, and a valley depth defined by the following equation is greater than or equal to about 0.2: (Abs first −Abs valley )/Abs first =valley depth wherein, Abs first is an absorption intensity at the first absorption peak wavelength and Abs valley is an absorption intensity at a lowest point of the valley. 2. The cadmium free quantum dot of claim 1 , wherein the red light wavelength region is greater than or equal to about 600 nanometers and less than or equal to about 650 nanometers. 3. The cadmium free quantum dot of claim 1 , wherein a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 40 nanometers. 4. The cadmium free quantum dot of claim 1 , wherein a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 38 nanometers. 5. The cadmium free quantum dot of claim 1 , wherein a full width at half maximum of the maximum photoluminescence peak is less than or equal to about 37 nanometers. 6. The cadmium free quantum dot of claim 1 , wherein a half width at half maximum of the first absorption peak is less than or equal to about 25 nanometers. 7. The cadmium free quantum dot of claim 1 , wherein a half width at half maximum of the first absorption peak is less than or equal to about 24 nanometers. 8. The cadmium free quantum dot of claim 1 , wherein the valley depth is greater than or equal to about 0.26. 9. The cadmium free quantum dot of claim 1 , wherein the valley depth is greater than or equal to about 0.3. 10. The cadmium free quantum dot of claim 1 , wherein a quantum efficiency of the cadmium free quantum dot is greater than or equal to about 85%. 11. The cadmium free quantum dot of claim 1 , wherein the cadmium free quantum dot has a mole ratio of the zinc to the indium of greater than or equal to about 10:1 and less than or equal to about 40:1, and a size of greater than or equal to about 6 nanometers. 12. The cadmium free quantum dot of claim 1 , wherein the semiconductor nanocrystal core comprises a Group III-V compound. 13. The cadmium free quantum dot of claim 1 , wherein the shell comprises a first semiconductor nanocrystal shell comprising zinc and selenium and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur. 14. The cadmium free quantum dot of claim 1 , wherein the first semiconductor nanocrystal shell is disposed directly on the surface of the semiconductor nanocrystal core and the first semiconductor nanocrystal shell does not comprise sulfur. 15. The cadmium free quantum dot of claim 1 , wherein a mole ratio of selenium with respect to indium is greater than or equal to about 5.7:1. 16. The cadmium free quantum dot of claim 1 , wherein a mole ratio of zinc with respect to indium is greater than or equal to about 12.5:1. 17. The cadmium free quantum dot of claim 14 , wherein in the quantum dot, a ratio of a total mole amount of sulfur and selenium to a mole amount of indium is greater than or equal to about 3:1 and less than or equal to about 40:1. 18. An ink comprising: a plurality of quantum dots, and a liquid vehicle, wherein the plurality of quantum dots comprises the cadmium free quantum dots of claim 1 . 19. A display device comprising a light emitting element, wherein the light emitting element comprises a plurality of the cadmium free quantum dots of claim 1 . 20. The display device of claim 19 , wherein the light emitting element is a stacked structure comprising a substrate and a light emitting layer disposed on the substrate in a predetermined pattern, wherein the predetermined pattern comprises a first repeating section configured to emit red light, and wherein the first repeating section comprises the plurality of the cadmium free quantum dots. 21. The display device of claim 19 , wherein the display device is configured to have color reproducibility of greater than or equal to about 80% measured in accordance with a BT2020 standard.

Assignees

Inventors

Classifications

  • Wavelength conversion materials · CPC title

  • Illumination with ultraviolet light; Luminescent elements or materials associated to the cell · CPC title

  • Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof · CPC title

  • Arsenides; Nitrides; Phosphides · CPC title

  • Homopolymers or copolymers of acids; Metal or ammonium salts thereof · CPC title

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What does patent US10975298B2 cover?
A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to ab…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification C09K11/0883. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Apr 13 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).