Micro laser diode transfer method and manufacturing method

Patent metadata

Field	Value
Publication number	US-10971890-B2
Application number	US-201616465745-A
Country	US
Kind code	B2
Filing date	Dec 5, 2016
Priority date	Dec 5, 2016
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

A micro laser diode transfer method and a manufacturing method comprise: forming a bonding layer ( 515 ) on a receiving substrate ( 513 ), wherein first type electrodes ( 514 ) are connected to the bonding layer ( 515 ); bringing a first side of the micro laser diodes ( 500 r ) on a carrier substrate ( 520 ) into contact with the bonding layer ( 515 ), wherein the carrier substrate ( 520 ) is laser-transparent; and irradiating selected micro laser diodes ( 500 r ) with laser from the side of the carrier substrate ( 520 ) to lift-off the selected micro laser diodes ( 500 r ) from the carrier substrate ( 520 ). This method may improve yield.

First claim

What is claimed is:

1. A method for transferring micro laser diodes, comprising:
forming a bonding layer on a receiving substrate, wherein first type electrodes are connected to the bonding layer;
bringing a first side of the micro laser diodes on a carrier substrate into contact with the bonding layer, wherein the carrier substrate is laser-transparent;
irradiating selected micro laser diodes with laser from a side of the carrier substrate to lift-off the selected micro laser diodes from the carrier substrate;
filling a dielectric filler material among the micro laser diodes to form a dielectric filler layers;
etching back the dielectric filler layer such that an upper surface of the dielectric filler layer is lower than an upper surface of a second side of the micro laser diodes; and
forming an electrode layer on the micro layer diodes and the dielectric filler layer, and patterning the electrode layer to expose the micro laser diodes to form second type electrodes contacting the upper surface of the dielectric filler layer and the upper surface of the second side of the micro laser diode, wherein at least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.

2. The method according to claim 1 , wherein the micro laser diodes are kept on the receiving substrate during lifting-off through at least one of a gravity force, an adhesion force of the bonding layer, an electrostatic force applied to the micro laser diodes and an electromagnetic force applied to the micro laser diodes.

3. The method according to claim 1 , wherein the micro laser diodes are of vertical cavity surface emitting laser structure, which includes a lower contact layer, a lower Bragg reflector layer, a lower spacer layer, an active layer, an upper spacer layer, an upper Bragg reflector layer and an upper contact layer.

4. The method according to claim 1 , wherein the micro laser diodes include red, blue and green micro laser diodes.

5. The method according to claim 1 , wherein the diameter of the micro laser diodes is less than 100 μm.

6. The method according to claim 1 , wherein the first type electrodes are anodes and the second type electrodes are cathode.

7. A method for manufacturing a micro laser diode device, including transferring micro laser diodes to a receiving substrate of the micro laser diode device by using the method according to claim 1 .

Assignees

• Goertek Inc

Inventors

• Zou Quanbo
• Wang Zhe

Classifications

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• H01S5/0217

  Removal of the substrate · CPC title

• H01S5/18369

  based on dielectric materials · CPC title

• H01S5/0216 Primary

  using an intermediate compound, e.g. a glue or solder · CPC title

• H01S5/4093

  Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion · CPC title