Transferring method, manufacturing method, device and electronic apparatus of micro-LED

Patent metadata

Field	Value
Publication number	US-10141287-B2
Application number	US-201515531194-A
Country	US
Kind code	B2
Filing date	Jul 14, 2015
Priority date	Jul 14, 2015
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

First claim

What is claimed is:

1. A method for transferring micro-LED, comprising:
forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side;
bringing the P electrodes and the N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and
irradiating the original substrate with laser from an original substrate side to lift-off the lateral micro-LEDs from the original substrate;
wherein the lateral micro-LEDs contain magnetic substance, and the P electrodes and the N electrodes of the lateral micro-LEDs are brought into contact with the pads preset on the receiving substrate by means of an action of electromagnetic force.

2. The method according to claim 1 , further comprising:
providing an anisotropic conductive layer on the receiving substrate;
wherein the P electrodes and the N electrodes of the lateral micro-LEDs are brought into contact with the pads preset on the receiving substrate via the anisotropic conductive layer;
wherein the method further comprises: processing the anisotropic conductive layer, to electrically connect the P electrodes and the N electrodes of the lateral micro-LEDs with the pads on the receiving substrate.

3. The method according to claim 2 , wherein the anisotropic conductive layer is at least one of an anisotropic conductive film, an anisotropic conductive paste and an anisotropic conductive tape.

4. The method according to claim 1 , wherein the P electrodes and the N electrodes of the lateral micro-LEDs are brought into contact with the pads preset on the receiving substrate by means of an action of gravity.

5. The method according to claim 1 , wherein the P electrodes and the N electrodes of the lateral micro-LEDs are brought into contact with the pads preset on the receiving substrate by means of an action of electrostatic force.

6. The method according to claim 5 , wherein the electrostatic force is applied by applying voltage to the pads.

7. The method according to claim 1 , wherein the P electrodes and the N electrodes of the lateral micro-LEDs include solder bumps, and the method further comprises: bonding the solder bumps with the pads.

8. A method for manufacturing a micro-LED device, comprising transferring lateral micro-LEDs to a receiving substrate by using the method according to claim 1 .

9. A micro-LED device, which is manufactured by using the method according to claim 8 .

10. An electronic apparatus, containing a micro-LED device according to claim 9 .

Assignees

• Goertek Inc

Inventors

• Zou Quanbo
• Wang Zhe

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H01L33/52

  Electricity · mapped topic

• H01L2933/005

  Electricity · mapped topic