High resistivity soft magnetic material for miniaturized power converter
US-9437668-B1 · Sep 6, 2016 · US
High resistivity soft magnetic material for miniaturized power converter
US2016284451A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016284451-A1 |
| Application number | US-201514666624-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 24, 2015 |
| Priority date | Mar 24, 2015 |
| Publication date | Sep 29, 2016 |
| Grant date | — |
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Abstract
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An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
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1 . An on-chip magnetic structure, comprising: a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material. 2 . The on-chip magnetic structure of claim 1 , wherein the magnetic material is substantially amorphous. 3 . The on-chip magnetic structure of claim 1 , wherein the resistivity of the magnetic material is at least 100 micro-ohm·centimeters (μΩ·cm). 4 . The on-chip magnetic structure of claim 1 , wherein the magnetic material further comprises a seed layer of one or more metals. 5 . The on-chip magnetic structure of claim 4 , wherein the one or more metals is nickel, cobalt, palladium, copper, titanium, or any combination thereof. 6 . The on-chip magnetic structure of claim 1 , wherein the phosphorous is in a range from about 9 to about 11 at. %. 7 . The on-chip magnetic structure of claim 1 , wherein the on-chip magnetic structure is a yoke or a coil. 8 .- 20 . (canceled)
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- What does patent US2016284451A1 cover?
- An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of a…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D1/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).