Crosspoint phase change memory with crystallized silicon diode access device

Patent metadata

Field	Value
Publication number	US-10971546-B2
Application number	US-201916542929-A
Country	US
Kind code	B2
Filing date	Aug 16, 2019
Priority date	Aug 16, 2019
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

A method of fabricating an access device in a crosspoint memory array structure during BEOL processing includes: forming at least a first doped semiconductor layer on an upper surface of a first conductive layer, the first doped semiconductor layer being in electrical connection with the first conductive layer; exposing at least a portion of the first doped semiconductor layer to a directed energy source to cause localized annealing in the first doped semiconductor layer to activate a dopant of a first conductivity type in the first doped semiconductor layer, thereby converting at least a portion of the first doped semiconductor layer into a polycrystalline layer; forming a second conductive layer over a least a portion of the first doped semiconductor layer; and etching the first doped semiconductor layer and the first and second conductive layers to form an access device that is self-aligned with the first and second conductive layers.

First claim

What is claimed is:

1. A method of fabricating an access device in a crosspoint memory array structure during back end of line (BEOL) processing of the crosspoint memory array structure, the method comprising:
forming at least a first doped semiconductor layer on an upper surface of a first conductive layer, the first doped semiconductor layer being in electrical connection with the first conductive layer;
exposing at least a portion of the first doped semiconductor layer to a directed energy source, the directed energy source causing localized annealing in the first doped semiconductor layer to activate a dopant of a first conductivity type in the first doped semiconductor layer and to convert at least a portion of the first doped semiconductor layer into a first polycrystalline layer;
subsequent to exposing at least a portion of the first doped semiconductor layer to the directed energy source, forming a second doped semiconductor layer on at least a portion of an upper surface of the first polycrystalline layer;
exposing at least a portion of the second doped semiconductor layer to the directed energy source, the directed energy source causing localized annealing in the second doped semiconductor layer to thereby activate a dopant of a second conductivity type, opposite the first conductivity type, in the second doped semiconductor layer and to convert at least a portion of the second doped semiconductor layer into a second polycrystalline layer;
forming a second conductive layer over a least a portion of the first and second doped semiconductor layers; and
etching the first and second doped semiconductor layers and the first and second conductive layers using a same mask pattern to form an access device that is self-aligned with the first and second conductive layers.

2. The method of claim 1 , wherein forming the first doped semiconductor layer is performed using in situ deposition.

3. The method of claim 2 , wherein the in situ deposition for forming the first doped semiconductor layer comprises one of physical vapor deposition (PVD) and plasma-enhanced chemical vapor deposition (PECVD).

4. The method of claim 1 , wherein forming the second doped semiconductor layer is performed using in situ deposition.

5. The method of claim 1 , wherein exposing at least a portion of the first and second doped semiconductor layers to the directed energy source comprises performing excimer laser annealing on respective prescribed regions in the first and second doped semiconductor layers.

6. The method of claim 1 , wherein forming the first and second doped semiconductor layers comprises depositing, using physical vapor deposition (PVD) sputtering, N-doped silicon and P-doped silicon.

7. The method of claim 1 , wherein depositing the respective first and second doped semiconductor layers comprises one of PVD co-sputtering and PVD sputtering each of the first and second doped semiconductor layers from a single target.

8. The method of claim 1 , further comprising forming an intrinsic semiconductor layer between the first and second doped semiconductor layers.

9. The method of claim 8 , wherein forming the intrinsic semiconductor layer comprises PVD sputtering from an intrinsic silicon target.

10. The method of claim 1 , wherein exposing at least a portion of the first doped semiconductor layer to the directed energy source comprises performing excimer laser annealing on a prescribed region in the first doped semiconductor layer.

11. The method of claim 1 , wherein forming the first doped semiconductor layer comprises depositing, using PVD sputtering, one of N-doped silicon and P-doped silicon.

12. The method of claim 11 , wherein depositing one of N-doped silicon and P-doped silicon comprises PVD sputtering from a doped silicon target.

13. The method of claim 1 , further comprising forming an encapsulation layer on at least sidewalls of the access device.

14. A method of fabricating a memory cell for use in a crosspoint memory array, the method comprising:
forming an access device during back end of line (BEOL) processing of the crosspoint memory array, wherein forming the access device comprises:
forming at least a first doped semiconductor layer on an upper surface of a first conductive layer, the first doped semiconductor layer being in electrical connection with the first conductive layer;
exposing at least a portion of the first doped semiconductor layer to a directed energy source, the directed energy source causing localized annealing in the first doped semiconductor layer to activate a dopant of a first conductivity type in the first doped semiconductor layer and to convert at least a portion of the first doped semiconductor layer into a first polycrystalline layer;
subsequent to exposing at least a portion of the first doped semiconductor layer to the directed energy source, forming a second doped semiconductor layer on at least a portion of an upper surface of the first polycrystalline layer;
exposing at least a portion of the second doped semiconductor layer to the directed energy source, the directed energy source causing localized annealing in the second doped semiconductor layer to thereby activate a dopant of a second conductivity type, opposite the first conductivity type, in the second doped semiconductor layer and to convert at least a portion of the second doped semiconductor layer into a second polycrystalline layer;
forming a second conductive layer over a least a portion of the first and second doped semiconductor layers; and
etching the first and second doped semiconductor layers and the first and second conductive layers using a same mask pattern to form an access device that is self-aligned with first and second conductive layers; and

forming a storage element on at least a portion of the access device and in electrical connection with the access device, the storage element being self-aligned with the access device.

15. The method of claim 14 , wherein forming the storage element comprises:
forming a third conductive layer on at least a portion of an upper surface of the second conductive layer;
forming a phase change material layer on at least a portion of an upper surface of the third conductive layer; and
forming a fourth conductive layer on at least a portion of an upper surface of the phase change material layer.

16. The method of claim 15 , wherein forming the storage element further comprises patterning and etching the third and fourth conductive layers and the phase change material layer concurrently with patterning and etching of the first doped semiconductor layer and the first and second conductive layers so that the access device is self-aligned with the storage element.

17. The method of claim 14 , further comprising forming an encapsulation layer on at least sidewalls of the access device and storage element.

18. The method of claim 14 , wherein forming the first doped semiconductor layer is performed using in situ deposition.

19. The method of claim 1 , wherein exposing at least a portion of the second doped semiconductor layer to the directed energy source is performed with the directed energy source at a lower energy level compared to exposing at least a portion of the first doped semiconductor layer to the directed energy source.

20. The method of claim 8 , further comprising exposing at least a portion of the intrinsic semiconductor layer to the directed energy source separately from exposing the first doped semiconductor layer to the directed energy source.

Assignees

• IBM

Inventors

• Carta Fabio
• Brightsky Matthew J
• Hekmatshoartabari Bahman
• Ray Asit
• Kim Wanki

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P14/3808

  using laser beams · CPC title

• H10P14/3441

  Conductivity type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title