Method for manufacturing ceramic electronic component, and ceramic electronic component
US-2016372255-A1 · Dec 22, 2016 · US
US10971305B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10971305-B2 |
| Application number | US-201916666177-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 28, 2019 |
| Priority date | May 31, 2017 |
| Publication date | Apr 6, 2021 |
| Grant date | Apr 6, 2021 |
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A method for manufacturing a ceramic electronic component in which a plated electrode can be formed in a region of the surface of a ceramic base body formed of a titanium-containing metal oxide. The method includes preparing a ceramic base body containing a titanium-containing metal oxide, forming a low-resistance section by modifying the metal oxide through irradiation of part of a surface layer portion of the ceramic base body with a pulse laser with a peak power density of 1×10 6 W/cm 2 to 1×10 9 W/cm 2 and a frequency of 500 kHz or less, and forming an electrode on the low-resistance section by electroplating. The laser irradiation generates an O defect in a titanium-containing metal oxide, such as BaTiO 3 to form an n-type semiconductor. Since this semiconductor section has a lower resistance value than the metal oxide, plating metal can be selectively deposited by electroplating.
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What is claimed is: 1. A method for manufacturing a ceramic electronic component, the method comprising: preparing a ceramic base body containing a titanium-containing metal oxide; forming a low-resistance section by modifying the metal oxide through irradiation of part of a surface layer portion of the ceramic base body with a pulse laser; and forming an electrode on the low-resistance section by electroplating, wherein the irradiation with the pulse laser is performed with a peak power density of 1×10 6 W/cm 2 to 1×10 9 W/cm 2 and a frequency of 500 kHz or less. 2. The method for manufacturing a ceramic electronic component according to claim 1 , wherein the metal oxide is formed into an n-type semiconductor in the low-resistance section. 3. The method for manufacturing a ceramic electronic component according to claim 1 , wherein the irradiation with the pulse laser is performed with a peak power density of 1×10 6 W/cm 2 to 1×10 8 W/cm 2 and a frequency of 10 kHz to 100 kHz. 4. The method for manufacturing a ceramic electronic component according to claim 1 , wherein the ceramic base body contains BaTiO 3 . 5. The method for manufacturing a ceramic electronic component according to claim 1 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 6. The method for manufacturing a ceramic electronic component according to claim 2 , wherein the irradiation with the pulse laser is performed with a peak power density of 1×10 6 W/cm 2 to 1×10 8 W/cm 2 and a frequency of 10 kHz to 100 kHz. 7. The method for manufacturing a ceramic electronic component according to claim 2 , wherein the ceramic base body contains BaTiO 3 . 8. The method for manufacturing a ceramic electronic component according to claim 3 , wherein the ceramic base body contains BaTiO 3 . 9. The method for manufacturing a ceramic electronic component according to claim 6 , wherein the ceramic base body contains BaTiO 3 . 10. The method for manufacturing a ceramic electronic component according to claim 2 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 11. The method for manufacturing a ceramic electronic component according to claim 3 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 12. The method for manufacturing a ceramic electronic component according to claim 4 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 13. The method for manufacturing a ceramic electronic component according to claim 6 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 14. The method for manufacturing a ceramic electronic component according to claim 7 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 15. The method for manufacturing a ceramic electronic component according to claim 8 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 16. The method for manufacturing a ceramic electronic component according to claim 9 , wherein the ceramic electronic component is a multilayer ceramic capacitor; a plurality of end portions of inner electrodes is exposed on each of both end surfaces of the ceramic electronic component; the low-resistance section is formed in at least one side surface adjacent to the both end surfaces of the ceramic electronic component in such a manner that the low-resistance section is formed in each of portions of the side surface that adjoin the respective end surfaces; and the electrode is continuously formed on each end surface and each low-resistance section of the ceramic electronic component. 17. A ceramic electronic component comprising: a ceramic base body containing a titanium-containing metal oxide; a low-resistance section formed in part of a surface layer portion of the ceramic base body and obtained by mo
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