Configuring optical layers in imprint lithography processes
US-10670971-B2 · Jun 2, 2020 · US
US10969692B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10969692-B2 |
| Application number | US-202016859584-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2020 |
| Priority date | Oct 20, 2017 |
| Publication date | Apr 6, 2021 |
| Grant date | Apr 6, 2021 |
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An imprint lithography method of configuring an optical layer includes selecting one or more parameters of a nanolayer to be applied to a substrate for changing an effective refractive index of the substrate and imprinting the nanolayer on the substrate to change the effective refractive index of the substrate such that a relative amount of light transmittable through the substrate is changed by a selected amount.
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What is claimed is: 1. An imprint lithography method of configuring optical layers, the imprint lithography method comprising: forming a first optical layer comprising a first substrate and a nanolayer imprinted directly on the first substrate; forming a second optical layer comprising a second substrate and a first functional pattern disposed along the second substrate; and forming a third optical layer comprising a third substrate and a second functional pattern disposed along the third substrate, wherein imprinting the nanolayer on the first substrate changes the effective refractive index of the substrate such that a relative amount of light transmittable through the first substrate to the second optical layer is changed by a selected amount. 2. The imprint lithography method of claim 1 , wherein the relative amount of light is a first relative amount of light, and wherein imprinting the nanolayer on the first substrate to change the effective refractive index of the first substrate comprises changing a second relative amount of light reflected from a surface of the first substrate. 3. The imprint lithography method of claim 1 , further comprising selecting one or more of a shape, a dimension, and a material formulation of the nanolayer. 4. The imprint lithography method of claim 1 , further comprising imprinting a flat nanoimprint on the first substrate. 5. The imprint lithography method of claim 1 , further comprising imprinting a featured nanoimprint on the first substrate. 6. The imprint lithography method of claim 1 , further comprising imprinting one or more anti-reflective (AR) features on the first substrate. 7. The imprint lithography method of claim 6 , wherein the one or more AR features have a height in a range of about 10 nm to about 300 nm. 8. The imprint lithography method of claim 7 , wherein the one or more AR features have a width in a range of about 10 nm to about 150 nm. 9. The imprint lithography method of claim 7 , further comprising distributing the one or more AR features with a pitch in a range of about 20 nm to about 200 nm. 10. The imprint lithography method of claim 1 , further comprising forming pillars on the first substrate. 11. The imprint lithography method of claim 1 , further comprising forming holes on the first substrate. 12. The imprint lithography method of claim 1 , further comprising forming one or both of continuous gratings and discontinuous gratings on the first substrate. 13. The imprint lithography method of claim 1 , further comprising: forming a functional pattern on a first side of the substrate; and imprinting the nanolayer along one or both of the first side of the substrate and a second side of the substrate opposite the first side of the substrate. 14. The imprint lithography method of claim 13 , further comprising forming an array of AR features of the nanolayer along a specific direction with respect to the functional pattern. 15. The imprint lithography method of claim 14 , further comprising forming the AR features of the nanolayer on the substrate to change the effective refractive index of the substrate based on a direction of light propagation such that light transmitted through the substrate is changed by the selected amount. 16. The imprint lithography method of claim 1 , further comprising: applying a film coating to the substrate; and imprinting the nanolayer atop the film coating. 17. The imprint lithography method of claim 1 , further comprising changing the relative amount of light transmittable through the substrate by about 0.5% to about 15%. 18. The imprint lithography method of claim 1 , wherein the nanolayer is a first nanolayer, the imprint lithography method further comprising imprinting a second nanolayer atop the first nanolayer. 19. The imprint lithography method of claim 18 , further comprising changing the effective refractive index to a first value based on the first nanolayer and changing the effective refractive index to a second value based on the second nanolayer. 20. The imprint lithography method of claim 1 , wherein the nanolayer imprinted on the first substrate is a first nanolayer, the effective refractive index of the first substrate is a first refractive index, the relative amount of light is a first relative amount of light, and the second optical layer includes a second nanolayer imprinted on the second substrate, the second nanolayer determining a second effective refractive index of the second substrate such that the second nanolayer increases a second relative amount of light transmittable through the second substrate to the third optical layer. 21. The imprint lithography method of claim 20 , wherein the first and second nanolayers are configured such that a final amount of light transmitted through the first and second substrates to the third optical layer is about equal to an amount of light directed from a source to the first nanolayer, minus a first amount of light reflected from the first substrate and minus a second amount of light reflected from the second substrate.
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having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures · CPC title
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