Phosphor, method for production same, light emitting device, image display, pigment and ultraviolet light absorber

Patent metadata

Field	Value
Publication number	US-10968387-B2
Application number	US-201716090112-A
Country	US
Kind code	B2
Filing date	Mar 27, 2017
Priority date	Mar 28, 2016
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

A phosphor, combined with LED having not exceeding 470 nm, of high emission intensity and with chemical and thermal stability is provided. The phosphor according to the present invention comprises an inorganic compound in which element A (A is one or two or more kinds of elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) is solid solved in an inorganic crystal including at least metal element M and non-metal element X and represented by MnXn+1 (3≤n≤52), an inorganic crystal having the same crystal structure, or an inorganic crystal including a solid solution thereof. Here, M comprises at least Al and Si, and if necessary element L (L is a metal element other than Al and Si) and X comprises N, O if necessary, and element Z if necessary (Z is a non-metal element other than N and O).

First claim

What is claimed is:

1. A phosphor comprising: an inorganic compound in which an A element (wherein A comprises one or two or more kinds of elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb) is solid solved in an inorganic crystal including at least a metal element M and a non-metal element X and being represented by M n X n+1 (wherein n is a value in the range of 3≤n≤52, wherein the metal element M comprises at least Al (aluminum), Si (silicon), and if necessary, an L element (wherein the L element comprises a metal element other than Al and Si), and wherein the non-metal element X comprises at least N (nitrogen), and if necessary, O (oxygen), and if necessary, an Z element (the Z element comprises a non-metal element other than N and O)), an inorganic crystal having a same crystal structure thereof, or an inorganic crystal comprising a solid solution of these crystals,
wherein the inorganic crystal comprises a crystal in an orthorhombic crystal system and having a symmetry in a space group Cmcm,
wherein the inorganic crystal represented by M n X n+1 comprises at least one selected from a group consisting of an inorganic crystal represented by Si x Al 11−x O 3−x N 9+x (wherein 0<x≤3), an inorganic crystal represented by Si x Al 12−x O 3−x N 10+x (wherein 0<x≤3), an inorganic crystal represented by Si x Al 14−x O 3−x N 12+x (wherein 0<x≤3), and an inorganic crystal represented by Si x Al 15−x O 3−x N 13+x (wherein 0<x≤3).

2. The phosphor according to claim 1 wherein:
the inorganic crystal represented by M n X n+1 comprises the inorganic crystal represented by Si x Al 11−x O 3−x N 9+x , and
the inorganic crystal represented by Si x Al 11−x O 3−x N 9+x , the inorganic crystal having a same crystal structure thereof, or the inorganic crystal comprising a solid solution of these crystals comprises lattice constants a1, b1 and c1 having values in ranges:

a1=0.30697±0.05 nm;
b1=1.86460±0.05 nm; and
c1=3.29300±0.05 nm.

3. The phosphor according to claim 1 wherein:
the inorganic crystal represented by M n X n+1 comprises the inorganic crystal represented by Si x Al 12−x O 3−x N 10+x , and
the inorganic crystal represented by Si x Al 12−x O 3−x N 10+x , the inorganic crystal having a same crystal structure thereof, or the inorganic crystal comprising a solid solution of these crystals comprises lattice constants a1, b1 and c1 having values in ranges:

a1=0.30745±0.05 nm;
b1=1.86919±0.05 nm; and
c1=3.57830±0.05 nm.

4. The phosphor according to claim 1 wherein:
the inorganic crystal represented by M n X n+1 comprises the inorganic crystal represented by Si x Al 14−x O 3−x N 12+x , and
the inorganic crystal represented by Si x Al 14−x O 3−x N 12+x , the inorganic crystal having a same crystal structure thereof, or the inorganic crystal comprising a solid solution of these crystals comprises lattice constants a1, b1 and c1 having values in ranges:

a1=0.30722±0.05 nm;
b1=1.87210±0.05 nm; and
c1=4.14890±0.05 nm.

5. The phosphor according to claim 1 wherein:
the inorganic crystal represented by M n X n+1 comprises the inorganic crystal represented by Si x Al 15−x O 3−x N 13+x , and
the inorganic crystal represented by Si x Al 15−x O 3−x N 13+x , the inorganic crystal having a same crystal structure thereof, or the inorganic crystal comprising a solid solution of these crystals comprises lattice constants a1, b1 and c1 having values in ranges:

a1=0.30810±0.05 nm;
b1=1.87354±0.05 nm; and
c1=4.41775±0.05 nm.

6. A method of manufacturing a phosphor as recited in claim 1 comprises the step of:
firing a raw material mixture comprising a mixture of metal compounds and being capable of constituting the phosphor as recited in claim 1 by firing, in an inert atmosphere including nitrogen at a temperature range of at least 1200° C. and not exceeding 2200° C.

7. A light emitting device comprising at least a light-emitting body and a phosphor wherein the phosphor as recited in claim 1 is utilized.

8. An image display device comprising an excitation source and a phosphor wherein the phosphor comprising a phosphor as recited in claim 1 .

9. A pigment comprising a phosphor as recited in claim 1 .

10. An ultraviolet absorber comprising a phosphor as recited in claim 1 .

Assignees

• Nat Inst Materials Science

Inventors

• Hirosaki Naoto
• Michiue Yuichi
• Funahashi Shiro
• Takeda Takashi

Classifications

• C09K11/77498

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/77218

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/77068

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title