Surface plasmon-semiconductor heterojunction resonant optoelectronic device and preparation method therefor

Patent metadata

Field	Value
Publication number	US-10964830-B2
Application number	US-201816970638-A
Country	US
Kind code	B2
Filing date	May 28, 2018
Priority date	Mar 7, 2018
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A surface plasmon-semiconductor heterojunction resonant optoelectronic device and a preparation method thereof are provided. A surface ligand molecule is modified on a plasmonic nanostructure, a plasmonic crystal face structure is bound to the surface ligand molecule, a semiconductor nanostructure seed crystal is located on the plasmonic crystal face structure, a one-dimensional semiconductor nanostructure is located on the semiconductor nanostructure seed crystal, and all parts are in tight contact. The heterogeneous integration material achieves a lattice match at an interface, greatly reduces a loss caused by defects and rough crystal faces, and can achieve direct coupling of a surface plasmon mode and an optical mode. The heterogeneous integration material has a large application prospect in the fields of a nanolaser, a nano heat source and photoelectric detection and photocatalysis.

First claim

What is claimed is:

1. A surface plasmon-semiconductor heterojunction resonant optoelectronic device, comprising: a plasmonic nanostructure, a surface ligand molecule, a plasmonic crystal face structure, a semiconductor nanostructure seed crystal and a one-dimensional semiconductor nanostructure, wherein the surface ligand molecule is modified on the plasmonic nanostructure in a tight contact manner, the plasmonic crystal face structure is bound to the surface ligand molecule in the tight contact manner, the semiconductor nanostructure seed crystal is located on the plasmonic crystal face structure in the tight contact manner, the one-dimensional semiconductor nanostructure is located on the semiconductor nanostructure seed crystal in the tight contact manner.

2. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein the plasmonic nanostructure is an anisotropic crystal material with a morphology of a triangular plate, a wire or a decahedron, having a long axis size of 10-10000 nm, or the plasmonic nanostructure is an isotropic crystal material with a morphology of a sphere or a symmetric polyhedron, having a size of 10-3000 nm.

3. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein material of the plasmonic nanostructure is a metal material with a plasmonic effect, and the metal material with the plasmonic effect is gold, silver, copper, aluminum, or platinum.

4. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein a material of the surface ligand molecule is cetyltrimethylammonium bromide (CTAB), polyvinylpyrrolidone (PVP) or mercaptopropionic acid (MPA).

5. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein the plasmonic crystal face structure is an anisotropic material with a morphology of a triangular plate, a cone or a cube, having a size of 1-10 nm.

6. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein the plasmonic crystal face structure is a small-sized metal nanostructure and has a material consistent with a material of the plasmonic nanostructure.

7. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein a morphology of the semiconductor nanostructure seed crystal is a sphere, a cone or a rod, a size of the semiconductor nanostructure seed crystal is 1-10 nm, and a material of the semiconductor nanostructure seed crystal is zinc oxide, aluminum oxide or cuprous oxide.

8. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , wherein the one-dimensional semiconductor nanostructure is a one-dimensional nanostructure with a morphology of a rod, a cone or a tube, a size of the one-dimensional semiconductor nanostructure is 10-10000 nm, and the one-dimensional semiconductor nanostructure is a large-sized metal micro-nano structure and has a material consistent with a material of the semiconductor nanostructure seed crystal.

9. A preparation method for the surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 1 , comprising the following steps:
step one: constructing the plasmonic crystal face structure, comprising:
subjecting a 0.01-1 Mol/L aqueous solution of the plasmonic nanostructure to repeated centrifugation and water washing to obtain a first precipitate, and re-dispersing the first precipitate in deionized water, to obtain a first solution;
adding a 0.01-1 Mol/L aqueous solution of the surface ligand molecule to the first solution, and stirring, to allow the surface ligand molecule to be adsorbed onto a specific crystal face of the plasmonic nanostructure due to a crystal face selectivity, to obtain a second solution; and
adding a 0.001-0.1 Mol/L aqueous solution of the plasmonic crystal face structure to the second solution, and stirring to allow the plasmonic crystal face structure and the surface ligand molecule in the specific crystal face of the plasmonic nanostructure to be in tight contact by virtue of a covalent bond, subjecting to repeated centrifugation and water washing to obtain a second precipitate, re-dispersing the second precipitate in deionized water, to obtain a third solution; and
step two: preparing and continuously growing the semiconductor nanostructure seed crystal, comprising:
adding a 0.01-0.1 Mol/L aqueous solution of the semiconductor nanostructure seed crystal to the third solution to obtain a mixed solution, and stirring the mixed solution for 1-4 h to allow the semiconductor nanostructure seed crystal to be adsorbed onto the specific crystal face of the plasmonic nanostructure;
subjecting the mixed solution to repeated centrifugation and water washing, removing excess semiconductor nanostructure seed crystals in the mixed solution to obtain a third precipitate, and re-dispersing the third precipitate in deionized water, to obtain a fourth solution; and
to obtain the one-dimensional semiconductor nanostructure, sequentially adding a 0.001-0.1 Mol/L aqueous solution of a metal salt, a 0.001-0.1 Mol/L aqueous solution of a weak reducing agent and a 0.01-0.1 Mol/L aqueous solution of a surface capping agent to the fourth solution and reacting at 60-90° C. for 1-18 h; subjecting to repeated centrifugation and water washing to obtain a fourth precipitate, and re-dispersing the fourth precipitate in deionized water, to obtain a final surface plasmon-semiconductor heterojunction.

10. The preparation method for the surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 9 , a material of the metal salt is a metal salt with a metallic element consistent with a metallic element in the semiconductor nanostructure seed crystal; a material of the weak reducing agent is ascorbic acid (AA), an aqueous solution of hydrogen peroxide (H 2 O 2 ) or hexamethylenetetramine (HMTA); and a material of the surface capping agent is a capping agent configured for promoting a growth of the semiconductor nanostructure seed crystal along a one-dimensional direction, such as polyethylenimine (PEI), triton X-100, or sodium bis(2-ethylhexyl) sulfosuccinate (AOT).

11. The surface plasmon-semiconductor heterojunction resonant optoelectronic device according to claim 7 , wherein the one-dimensional semiconductor nanostructure is a one-dimensional nanostructure with a morphology of a rod, a cone or a tube, a size of the one-dimensional semiconductor nanostructure is 10-10000 nm, and the one-dimensional semiconductor nanostructure is a large-sized metal micro-nano structure and has a material consistent with the material of the semiconductor nanostructure seed crystal.

Assignees

• Univ Southeast

Inventors

• Zhang Tong
• Wang Shanjiang
• Zhang Xiaoyang

Classifications

• H10F30/222

  the potential barrier being a PN heterojunction · CPC title

• H10F30/21 Primary

  the devices being sensitive to infrared, visible or ultraviolet radiation · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/148

  Shapes of potential barriers · CPC title